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IXGA48N60A3

型号：

IXGA48N60A3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

221 K

下载PDF手册
GenX3TM 600V IGBT  
IXGA48N60A3  
IXGH48N60A3  
IXGP48N60A3  
VCES = 600V  
IC110 = 48A  
VCE(sat) ≤ 1.35V  
Ultra Low Vsat PT IGBT for  
up to 5kHz switching  
TO-263 (IXGA)  
G
E
(TAB)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TO-247 (IXGH)  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC110  
ICM  
TC = 110°C  
48  
A
A
G
TC = 25°C, 1ms  
300  
(TAB)  
C
E
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 96  
A
(RBSOA)  
Clamped inductive load @ ≤ 600V  
TO-220 (IXGP)  
PC  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
(TAB)  
G
C
E
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
G = Gate  
C
= Collector  
Md  
Mounting torque (TO-247 & TO-220)  
1.13/10  
Nm/lb.in.  
E = Emitter  
TAB = Collector  
Weight  
TO-247  
TO-220  
TO-263  
6.0  
3.0  
2.5  
g
g
g
Features  
z Optimized for low conduction losses  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
z Power Inverters  
z UPS  
5.0  
z Motor Drives  
ICES  
VCE = VCES  
VGE = 0V  
25 μA  
250 μA  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
1.18  
1.35  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99581B(07/08)  
IXGA48N60A3 IXGH48N60A3  
IXGP48N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 32A, VCE = 10V, Note 1  
30  
48  
S
Cies  
Coes  
Cres  
3190  
175  
43  
pF  
∅ P  
VCE = 25V, VGE = 0V, f = 1MHz  
pF  
pF  
Qg  
110  
21  
nC  
nC  
nC  
Qge  
Qgc  
IC = 32A, VGE = 15V, VCE = 0.5 • VCES  
42  
e
td(on)  
tri  
25  
30  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
ns  
mJ  
ns  
Min. Max.  
Inductive Load, TJ = 25°C  
IC = 32A, VGE = 15V  
Eon  
td(off)  
tfi  
0.95  
334  
224  
2.90  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VCE = 480V, RG = 5Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ns  
Eoff  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
24  
30  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 25°C  
IC = 32A, VGE = 15V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
1.97  
545  
380  
5.60  
mJ  
ns  
.780 .800  
.177  
VCE = 480V, RG = 5Ω  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCS  
0.42 °C/W  
(TO-247)  
(TO-220)  
0.25  
0.50  
°C/W  
°C/W  
TO-220 (IXGP) Outline  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-263 (IXGA) Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGA48N60A3 IXGH48N60A3  
IXGP48N60A3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
60  
30  
7V  
4
0
0
2
6
8
10  
12  
14  
150  
9.5  
0.0  
0.0  
6
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1.8  
15  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 64A  
9V  
7V  
I C = 32A  
I C = 16A  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
-50  
-25  
0
25  
50  
75  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
TJ = 25ºC  
I C = 64A  
32A  
16A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
7
8
9
10  
11  
12  
13  
14  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA48N60A3 IXGH48N60A3  
IXGP48N60A3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 300V  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 32A  
I G = 10mA  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
10 20 30 40 50 60 70 80 90 100 110 120  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
C
ies  
C
oes  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
= 1 MHz  
5
f
res  
10  
100 150 200 250 300 350 400 450 500 550 600 650  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60A3(56) 07-10-08-A  
IXGA48N60A3 IXGH48N60A3  
IXGP48N60A3  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss  
vs. Gate Resistance  
13  
11  
9
6
14  
12  
10  
8
7
6
5
4
3
2
1
0
I C = 64A  
E
E
on - - - -  
off  
5
4
3
2
1
0
RG = 5ꢀ VGE = 15V  
,
VCE = 480V  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
7
I C = 32A  
6
TJ = 125ºC  
5
4
3
2
I C = 16A  
26  
TJ = 25ºC  
30 35  
1
0
15  
20  
25  
40  
45  
50  
55  
60  
65  
10  
12  
14  
16  
18  
20  
22  
24  
28  
30  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss  
vs. Junction Temperature  
13  
12  
11  
10  
9
6
520  
500  
480  
460  
440  
420  
400  
380  
360  
340  
850  
800  
750  
700  
650  
600  
550  
500  
450  
400  
tf  
td(off) - - - -  
E
E
on - - - -  
off  
RG = 5Ω VGE = 15V  
TJ = 125ºC, VGE = 15V  
CE = 480V  
,
CE = 480V  
5
4
3
2
1
0
V
V
I C = 64A  
I C = 64A  
8
7
16A  
32A  
I C = 32A  
6
5
4
16A  
32A  
3
2
I C = 16A  
64A  
1
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-on Switching Times  
vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
650  
600  
550  
500  
450  
400  
350  
300  
80  
70  
60  
50  
40  
30  
20  
10  
28  
27  
26  
25  
24  
23  
22  
21  
I C = 64A  
TJ = 125ºC  
tr  
td(on)  
- - - -  
RG = 5 , VGE = 15V  
Ω
VCE = 480V  
tf  
td(off) - - - -  
RG = 5Ω , VGE = 15V  
CE = 480V  
V
I C = 32A  
I C = 16A  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA48N60A3 IXGH48N60A3  
IXGP48N60A3  
Fig. 19. Inductive Turn-on Switching Times  
vs. Collector Current  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
70  
60  
50  
40  
30  
20  
10  
0
28  
100  
90  
80  
70  
60  
50  
40  
30  
20  
56  
52  
48  
44  
40  
36  
32  
28  
24  
tr  
td(on)  
- - - -  
27  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
25ºC < TJ < 125ºC  
26  
I C = 64A  
TJ = 25ºC  
25  
I C = 32A  
24  
23  
TJ = 125ºC  
tr  
td(on)  
- - - -  
22  
21  
RG = 5 , VGE = 15V  
Ω
I C = 16A  
VCE = 480V  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-off Switching Times  
vs. Junction Temperature  
480  
440  
400  
360  
320  
280  
240  
200  
650  
600  
550  
500  
450  
400  
350  
300  
tf  
td(off) - - - -  
RG = 5ꢀ , VGE = 15V  
VCE = 480V  
I C = 64A, 32A, 16A  
I C = 64A, 32A, 16A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60A3(56) 07-10-08-A  
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