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IXGB200N60B3

型号：

IXGB200N60B3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

197 K

下载PDF手册
GenX3TM 600V IGBT  
VCES = 600V  
IC110 = 200A  
VCE(sat) ≤ 1.5V  
tfi(typ) = 183ns  
IXGB200N60B3  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
PLUS264TM (IXGB)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C (chip capability)  
TC = 25°C, 1ms  
75  
200  
600  
A
A
A
G
(TAB)  
C
E
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 1Ω  
Clamped inductive load @ VCE ≤ 600V  
TC = 25°C  
ICM = 300  
A
TAB = Collector  
1250  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z NPT IGBT technology  
z Low switching losses  
z Low tail current  
-55 ... +150  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
z No latch up  
TSOLD  
z Short circuit capability  
z Positive temperature coefficient  
for easy paralleling  
FC  
Mounting force  
30..120/6.7..27  
10  
N/lb.  
g
Weight  
z MOS input, voltage controlled  
z Optional ultra fast diode  
z International standard package  
Advantages  
z Space savings  
z High power density power supplies  
z Low gate charge results in simple  
drive requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
Applications  
5.0  
ICES  
VCE = VCES  
VGE = 0V  
25 μA  
5.0 mA  
z High Frequency Inverters  
z UPS and Welding  
TJ = 125°C  
z AC and DC Motor Controls  
z Power Supplies and Drivers for  
Solenoids, Relays and Connectors  
z PFC Circuits  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
IC = 200A  
1.35  
1.50  
V
1.65  
1.75  
V
V
TJ = 125°C  
z Battery Chargers  
DS99929A(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGB200N60B3  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS264TM (IXGB) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
95  
160  
S
Cies  
Coes  
Cres  
26  
1260  
97  
nF  
pF  
pF  
Qg(on)  
Qge  
750  
115  
245  
nC  
nC  
nC  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
td(on)  
tri  
44  
83  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
Note: Bottom heatsink meets  
2500Vrms Isolation to the other  
Eon  
td(off)  
tfi  
1.6  
310  
183  
2.9  
mJ  
450 ns  
300 ns  
VCE = 300V, RG = 1Ω  
Eoff  
4.5 mJ  
td(on)  
tri  
42  
80  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 100A, VGE = 15V  
Eon  
td(off)  
tfi  
2.4  
430  
300  
4.2  
mJ  
ns  
VCE = 300V, RG = 1Ω  
ns  
Eoff  
mJ  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.13  
Ref: IXYS CO 0128  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGB200N60B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
11V  
9V  
VGE = 15V  
11V  
9V  
7V  
7V  
6V  
5V  
6V  
5V  
60  
40  
20  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
1
2
3
4
5
6
7
8
9
150  
6.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
200  
180  
160  
140  
120  
100  
80  
1.25  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 200A  
I C = 150A  
I C = 100A  
9V  
7V  
60  
40  
20  
5V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 200A  
150A  
100A  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGB200N60B3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
250  
225  
200  
175  
150  
125  
100  
75  
TJ = - 40ºC  
VCE = 300V  
I C = 100A  
I
G = 10mA  
25ºC  
125ºC  
6
4
50  
2
25  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
100  
200  
300  
400  
500  
600  
700  
800  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
350  
300  
250  
200  
150  
100  
50  
C
C
ies  
oes  
TJ = 125ºC  
RG = 1  
Ω
dV / dt < 10V / ns  
C
res  
= 1 MHz  
5
f
0
100  
10  
200  
300  
400  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGB200N60B3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.7  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
E
E
on - - - -  
off  
RG = 1  
VGE = 15V  
Ω ,  
I C = 100A  
VCE = 300V  
TJ = 125ºC  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 300V  
TJ = 25ºC  
I C = 50A  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
330  
320  
310  
300  
290  
280  
270  
260  
250  
240  
230  
1300  
1200  
1100  
1000  
900  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
2.7  
E
E
on - - - -  
t f  
td(off)  
- - - -  
V
off  
2.4  
2.1  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
RG = 1Ω VGE = 15V  
,
TJ = 125ºC, GE = 15V  
VCE = 300V  
CE = 300V  
V
I C = 100A  
I C = 100A  
800  
700  
600  
I C = 50A  
500  
I C = 50A  
400  
300  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
500  
480  
460  
440  
420  
400  
380  
360  
340  
320  
300  
340  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
500  
480  
460  
440  
420  
400  
380  
360  
340  
320  
300  
280  
tf  
td(off)  
- - - -  
RG = 1Ω, VGE = 15V  
TJ = 125ºC  
VCE = 300V  
t f  
td(off)  
- - - -  
RG = 1Ω , VGE = 15V  
I
= 50A, 100A  
C
VCE = 300V  
TJ = 25ºC  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGB200N60B3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
90  
80  
70  
60  
50  
40  
30  
48  
46  
44  
42  
40  
38  
36  
150  
130  
110  
90  
140  
120  
100  
80  
tr  
td(on) - - - -  
tr  
td(on) - - - -  
RG = 1Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 300V  
VCE = 300V  
I C = 100A  
TJ = 25ºC, 125ºC  
I C = 50A  
70  
60  
50  
40  
30  
20  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
48  
46  
44  
42  
40  
38  
36  
I C = 100A  
tr  
td(on) - - - -  
RG = 1Ω , VGE = 15V  
VCE = 300V  
I C = 50A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_200N60B3(97)3-28-08-A  
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