找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGE200N60B_04

型号:

IXGE200N60B_04

描述:

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

523 K

IXGE 200N60B  
VCES  
IC25  
= 600 V  
= 160 A  
HiPerFASTTM IGBT  
VCE(sat) = 2.3 V  
tfi  
= 160ns  
E
ISOPLUS227TM (IXGE)  
E c  
Symbol  
TestConditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E c  
C
IC25  
IL  
IC90  
ICM  
TC = 25°C  
Terminal Current Limit(RMS)  
TC = 90°C  
160  
100  
96  
A
A
A
A
G = Gate, E = Emitter, C = Collector  
c
either emitter terminal can be  
used as Main or Kelvin Emitter  
TC = 25°C, 1 ms  
400  
SSOA  
V
= 15 V, T = 125°C, RG = 2.4 Ω  
ICM = 200  
A
(RBSOA)  
CGlaE mped indVuJctive load @ 0.8 VCES  
Features  
Conforms to SOT-227B outline  
Isolation voltage 3000 V~  
Very high current, fast switching IGBT  
PC  
TC = 25°C  
416  
W
TJ  
TJM  
Tstg  
-40 ... +150  
150  
-40 ... +150  
°C  
°C  
°C  
Low VCE(sat)  
- for minimum on-state conduction  
losses  
VISOL  
50/60 Hz  
ISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
I
MOS Gate turn-on  
- drive simplicity  
Md  
Mounting torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Low collector-to-case capacitance  
Terminal connection torque (M4)  
(< 50 pF)  
Weight  
19  
g
Low package inductance (< 5 nH)  
- easy to drive and to protect  
Applications  
Symbol  
TestConditions  
Characteristic Values  
AC motor speed control  
DC servo and robot drives  
DC choppers  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 1 mA , VGE = 0 V  
IC = 1 mA, VCE = VGE  
600  
2.5  
V
V
Uninterruptible power supplies (UPS)  
5.5  
Switch-mode and resonant-mode  
power supplies  
ICES  
VCE = V  
T = 25°C  
TJJ = 125°C  
200  
2
µA  
VGE = 0CVES  
mA  
Advantages  
Easy to mount with 2 screws  
Space savings  
IGES  
VCE = 0 V, VGE = 20 V  
IC = 120A, VGE = 15 V  
400  
2.3  
nA  
V
VCE(sat)  
High power density  
DS98911B(09/04)  
© 2004 IXYS All rights reserved  
IXGE 200N60B  
Symbol  
gfs  
TestConditions  
Characteristic Values  
SOT-227BminiBLOC  
(TJ = 25°C, unless otherwise specified)  
min. typ.  
max.  
IC = 60 A; VCE = 10 V,  
50  
75  
S
Pulse test, t 300 µs, duty cycle 2 %  
Cies  
Coes  
Cres  
11000  
680  
190  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
Qge  
Qgc  
350  
72  
131  
nC  
nC  
nC  
IC = 120A, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
Eon  
td(off)  
60  
45  
2.4  
200  
ns  
ns  
mJ  
Inductive load, TJ = 25°C  
IC = 100A, V = 15 V  
VCE = 0.8 VCGEES, RG = Roff = 2.4 Ω  
360 ns  
Remarks: Switching times  
may increase for  
V
(Clamp) > 0.8 • V  
,
tfi  
Eoff  
160  
5.5  
280 ns  
9.6 mJ  
hiCgEher TJ or increaseCdESRG  
td(on)  
tri  
Eon  
td(off)  
tfi  
60  
60  
4.8  
290  
250  
8.7  
ns  
ns  
mJ  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC =100A, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 2.4 Ω  
Remarks: Switching times  
may increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
Eoff  
Please see IXGN200N60B data  
sheet for characteristic curves.  
RthJC  
RthCK  
0.3 K/W  
K/W  
0.07  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
oneormoreofthefollowingU.S.patents:  
厂商 型号 描述 页数 下载

IXYS

IXGA10N60 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

IXGA10N60A 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.217095s