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IXGF32N170

型号：

IXGF32N170

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

179 K

下载PDF手册
VCES = 1700V  
IC110 = 19A  
VCE(sat) ≤ 3.5V  
tfi(typ) = 250ns  
High Voltage IGBT  
IXGF32N170  
( Electrically Isolated Tab)  
ISOPLUS i4-PakTM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1700  
V
1
2
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
5
ISOLATED TAB  
IC25  
IC110  
ICM  
TC = 25°C  
44  
19  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
200  
1 = Gate  
2 = Emitter  
5 = Collector  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 2.7Ω  
ICM = 70  
A
(RBSOA)  
Clamped Inductive Load  
@ 0.8 • VCES  
tsc  
TC = 125°C, VCE = 1200V, VGE = 15V, RG = 10Ω  
10  
μs  
Features  
PC  
TC = 25°C  
200  
W
ꢀ
Electrically Isolated Tab  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
ꢀ
ꢀ
ꢀ
High Current Handling Capability  
Rugged NPT Structure  
TJM  
Tstg  
-55 ... +150  
Molding Epoxies Meet UL 94 V-0  
Flammability Classification  
TL  
TSOLD  
1.6 mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 / 4.5..27  
Nm/lb.in.  
Applications  
ꢀ
VISOL  
Weight  
50/60Hz, 1 minute  
2500  
5
V~  
g
Capacitor Discharge & Pulser Circuits  
AC Motor Drives  
Uninterruptible Power Supplies (UPS)  
Switched-Mode and Resonant-Mode  
ꢀ
ꢀ
ꢀ
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1700  
3.0  
Typ.  
Max.  
Advantages  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
V
V
ꢀ
High Power Density  
Suitable for Surface Mounting  
IC = 250μA, VCE = VGE  
VCE = 0.8 • VCES, VGE= 0V, Note 2  
5.0  
ꢀ
50 μA  
mA  
TJ = 125°C  
1
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
2.7  
3.3  
3.5  
V
V
TJ = 125°C  
DS99569B(5/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGF32N170  
ISOPLUS i4-PakTM (HV) (IXGF) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 32A, VCE = 10V, Note 1  
20  
30  
S
Cies  
Coes  
Cres  
4290  
167  
47  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
146  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 32A, VGE = 15V, VCE = 0.5 • VCES  
52  
td(on)  
tri  
45  
38  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 32A, VGE = 15V  
td(off)  
270  
500 ns  
VCE = 0.6 • VCES, RG = 2.7Ω  
tfi  
Eoff  
250  
10.6  
500 ns  
20 mJ  
td(on)  
tri  
48  
42  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 32A, VGE = 15V  
Eoff  
6.0  
mJ  
ns  
td(off)  
360  
VCE = 0.6 • VCES, RG = 2.7Ω  
tfi  
560  
ns  
Eoff  
13.5  
mJ  
RthJC  
RthCS  
RthJA  
0.62 °C/W  
°C/W  
0.15  
30  
°C/W  
Notes: 1. Pulse test, t < 300μs; duty cycle, d < 2%.  
2. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGF32N170  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
64  
56  
48  
40  
32  
24  
16  
8
240  
210  
180  
150  
120  
90  
VGE = 17V  
15V  
13V  
15V  
VGE = 17V  
13V  
11V  
9V  
11V  
9V  
7V  
60  
7V  
30  
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
VC E - Volts  
0
2
4
6 8  
VC E - Volts  
10  
12  
14  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of V  
Temperature  
on  
CE(sat)  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
64  
56  
48  
40  
32  
24  
16  
8
VGE = 17V  
15V  
13V  
VGE = 15V  
IC = 64A  
11V  
9V  
IC = 32A  
IC = 16A  
7V  
0
0
1
2
3
VCE - Volts  
4
5
6
-50 -25  
0
25  
50  
75 100 125 150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8
7
6
5
4
3
2
1
TJ = 25ºC  
IC = 64A  
32A  
TJ = 125ºC  
25ºC  
- 40ºC  
16A  
6
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
4
5
6
7
8
9
10  
VG E - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_32N170 (7N)7-10-08-A  
IXGF32N170  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
VCE = 850V  
IC= 32A  
IG= 10mA  
TJ = - 40ºC  
25ºC  
125ºC  
6
4
2
0
0
0
10 20 30 40 50 60 70 80 90 100  
I C - Amperes  
0
20  
40  
60 80 100 120 140 160  
Q G - nanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Dependence of E on R  
off  
G
25  
10000  
1000  
100  
23  
21  
19  
17  
15  
13  
11  
9
C
C
ies  
IC = 64A  
IC = 32A  
TJ = 125ºC  
GE = 1 5V  
CE = 1 0 2 0V  
V
oes  
V
IC = 16A  
C
f
= 1 MHz  
res  
30  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0
5
10  
15  
20  
VC E - Volts  
25  
35  
40  
R G - Ohms  
Fig. 12. Dependence of E on  
off  
Fig. 11. Dependence of Eoff on IC  
Temperature  
22  
20  
18  
16  
14  
12  
10  
8
24  
22  
20  
18  
16  
14  
12  
10  
8
RG = 2.7Ω  
RG= 1 5Ω  
RG = 2.7Ω  
IC = 64A  
- - - -  
RG= 1 5Ω  
- - - -  
V
V
GE = 15V  
GE = 10 2 0V  
VGE = 15V  
VGE = 10 2 0V  
TJ = 125ºC  
IC = 32A  
IC = 16A  
TJ = 25ºC  
6
16 20 24 28 32 36 40 44 48 52 56 60 64  
I C - Amperes  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGF32N170  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_32N170 (7N)7-10-08-A  
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