请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH100N30C3

型号：

IXGH100N30C3

描述：

GenX3 300V IGBT[ GenX3 300V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

105 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 300V IGBT  
IXGH100N30C3  
VCES = 300V  
IC110 = 100A  
VCE(sat) ≤ 1.85V  
tfi typ = 94ns  
High Speed PT IGBTs for  
50-150kHz switching  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
300  
300  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C
E
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C (chip capability)  
TC = 25°C, 1ms  
75  
100  
500  
A
A
A
IA  
TC = 25°C  
TC = 25°C  
100  
500  
A
EAS  
mJ  
Features  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 200  
A
(RBSOA)  
Clamped inductive load @ ≤ 300V  
TC = 25°C  
z High Frequency IGBT  
z Square RBSOA  
PC  
460  
W
z High avalanche capability  
z Drive simplicity with MOS Gate  
Turn-On  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z High current handling capability  
-55 ... +150  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
Applications  
Md  
Mounting torque  
1.13/10  
6
Nm/lb.in.  
g
z PFC Circuits  
z PDP Systems  
Weight  
z Switched-mode and resonant-mode  
converters and inverters  
z SMPS  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250µA, VGE = 0V  
IC = 250µA, VCE = VGE  
300  
2.5  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
50  
1.0  
µA  
TJ = 125°C  
TJ = 125°C  
mA  
IGES  
VCE = 0V, VGE  
=
20V  
100  
nA  
VCE(sat)  
IC = 100A, VGE = 15V  
1.53  
1.59  
1.85  
V
V
© 2007 IXYS CORPORATION, All rights reserved  
DS99877A(01/08)  
IXGH100N30C3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V,  
40  
75  
S
Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.  
∅ P  
Cies  
Coes  
Cres  
6300  
435  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
115  
Qg  
162  
27  
nC  
nC  
nC  
e
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
60  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
23  
38  
ns  
ns  
Inductive Load, TJ = 25°C  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eon  
td(off)  
tfi  
0.23  
105  
94  
mJ  
ns  
IC = 50A, VGE = 15V  
160  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
VCE = 200V, RG = 2Ω  
20.80 21.46  
15.75 16.26  
ns  
Eoff  
0.52  
0.9 mJ  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
24  
37  
ns  
ns  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Inductive Load, TJ = 125°C  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eon  
td(off)  
tfi  
0.35  
131  
113  
0.75  
mJ  
ns  
IC = 50A, VGE = 15V  
VCE = 200V, RG = 2Ω  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.27 °C/W  
°C/W  
0.21  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH100N30C3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
40  
20  
5V  
2
0
0
0
0
6
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2.2  
2.4  
15  
0
-50  
4
1
2
3
4
5
6
150  
8
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
200  
180  
160  
140  
120  
100  
80  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 200A  
9V  
7V  
I C = 100A  
60  
40  
I C = 50A  
20  
5V  
0
0.4  
0.8  
1.2  
1.6  
2
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 200A  
100A  
50A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
7
8
9
10  
11  
12  
13  
14  
4.5  
5
5.5  
6
6.5  
7
7.5  
VGE - Volts  
VGE - Volts  
© 2007 IXYS CORPORATION, All rights reserved  
IXGH100N30C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
VCE = 150V  
I C = 100A  
I
G = 10mA  
TJ = - 40ºC  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
240  
200  
160  
120  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
C
res  
TJ = 125ºC  
40  
RG = 2  
dV / dT < 10V / ns  
Ω
f = 1 MHz  
5
0
10  
50  
100  
150  
200  
250  
300  
350  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH100N30C3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Swiching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
on - - - -  
VGE = 15V  
E
E
off  
RG = 2  
on - - - -  
TJ = 125ºC , VGE = 15V  
E
E
off  
Ω ,  
VCE = 200V  
VCE = 200V  
TJ = 125ºC, 25ºC  
I C = 50A  
I C = 25A  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Swiching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
160  
150  
140  
130  
120  
110  
100  
360  
320  
280  
240  
200  
160  
120  
- - - -  
td(off)  
V
GE = 15V  
t f  
E
E
on - - - -  
VGE = 15V  
off  
TJ = 125ºC,  
RG = 2  
,
Ω
CE = 200V  
V
VCE = 200V  
I C = 50A  
I C = 50A  
I C = 25A  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
180  
160  
140  
120  
100  
80  
135  
130  
125  
120  
115  
110  
105  
100  
130  
120  
110  
100  
90  
135  
130  
125  
120  
115  
110  
105  
100  
- - - -  
td(off)  
RG = 2 , VGE = 15V  
tf  
Ω
TJ = 125ºC  
VCE = 200V  
- - - -  
td(off)  
RG = 2 , VGE = 15V  
t f  
Ω
VCE = 200V  
I
= 50A, 25A  
C
80  
TJ = 25ºC  
70  
60  
60  
40  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
IC - Amperes  
TJ - Degrees Centigrade  
© 2007 IXYS CORPORATION, All rights reserved  
IXGH100N30C3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
30  
28  
26  
24  
22  
20  
18  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
- - - -  
td(on)  
TJ = 125ºC, VGE = 15V  
tr  
tr  
td(on) - - - -  
RG = 2 , VGE = 15V  
Ω
VCE = 200V  
VCE = 200V  
I C = 50A  
TJ = 25ºC, 125ºC  
I C = 25A  
2
3
4
5
6
7
8
9
10  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
26  
25  
24  
23  
22  
21  
20  
19  
18  
tr  
td(on) - - - -  
RG = 2 , VGE = 15V  
Ω
VCE = 200V  
I C = 50A  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_100N30C3(75)8-17-07  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.177035s