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IXGH120N30B3

型号：

IXGH120N30B3

描述：

GenX3 300V IGBT[ GenX3 300V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

161 K

下载PDF手册
TM  
VCES = 300V  
IC110 = 120A  
VCE(sat) ≤ 1.7V  
GenX3 300V IGBT  
IXGH120N30B3  
Medium speed low Vsat PT  
IGBTs for 10-50 kHz switching  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
300  
300  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
TAB  
C
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
TC = 25°C, 1ms  
75  
120  
480  
A
A
A
E
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 1Ω  
Clamped inductive load @VCE≤ 300V  
ICM = 240  
A
TAB = Collector  
PC  
TC = 25°C  
540  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in.  
z Optimized for low switching losses  
z Square RBSOA  
z International standard package  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
Weight  
6
g
Advantages  
z High power density  
z Low gate drive requirement  
Applications  
z High Frequency Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
z Motor Drives  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
300  
3.0  
V
V
5.0  
ICES  
VCE = VCES  
VGE = 0V  
10 μA  
500 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC  
= 120A, VGE = 15V, Note 1  
TJ = 125°C  
1.42  
1.47  
1.70  
V
V
DS99797A(07/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH120N30B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
55  
90  
S
Cies  
Coes  
Cres  
6700  
650  
pF  
pF  
pF  
∅ P  
1
2
3
160  
Qg  
225  
38  
nC  
nC  
nC  
Qge  
Qgc  
IC = 120A, VGE = 15V, VCE = 0.5 • VCES  
85  
td(on)  
tr  
td(off)  
tf  
22  
27  
ns  
ns  
e
Resistive load, TJ = 25°C  
IC = 60A, VGE = 15V  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
100  
64  
ns  
ns  
VCE = 240V, RG = 1Ω  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tr  
td(off)  
tf  
21  
30  
ns  
ns  
Resistive load, TJ = 125°C  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = 60A, VGE = 15V  
106  
250  
ns  
ns  
VCE = 240V, RG = 1Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
RthJC  
RthCK  
0.23 °C/W  
°C/W  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
0.21  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH120N30B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
60  
40  
30  
20  
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
0
1
2
3
4
5
6
7
8
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
240  
200  
160  
120  
80  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 240A  
9V  
7V  
I C = 120A  
40  
5V  
I C = 60A  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
275  
250  
225  
200  
175  
150  
125  
100  
75  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 240A  
120A  
60A  
TJ = 125ºC  
25ºC  
- 40ºC  
50  
25  
0
6
7
8
9
10  
11  
12  
13  
14  
15  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH120N30B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
140  
120  
100  
80  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 150V  
I C = 120A  
I G = 10mA  
25ºC  
125ºC  
60  
6
40  
4
20  
2
0
0
0
20 40 60 80 100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
0
40  
80  
120  
160  
200  
240  
280  
IC - Amperes  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
100,000  
10,000  
1,000  
100  
270  
240  
210  
180  
150  
120  
90  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
60  
C
res  
RG = 1Ω  
dV / dt < 10V / ns  
30  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
50  
75 100 125 150 175 200 225 250 275 300 325  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_120N30B3(76)08-07-08-B  
IXGH120N30B3  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
39  
37  
35  
33  
31  
29  
27  
25  
39  
37  
35  
33  
31  
29  
27  
25  
RG = 1Ω  
RG = 1ꢀ  
GE = 15V  
VCE = 240V  
VGE = 15V  
VCE = 240V  
V
TJ = 125ºC  
I C = 120A  
TJ = 25ºC  
I C = 60A  
60 65  
70 75 80  
85 90 95 100 105 110 115 120  
IC - Amperes  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
375  
350  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
VCE = 240V  
VCE = 240V  
I C = 60A  
I C = 120A  
I C = 60A  
I C = 120A  
80  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
RG - Ohms  
RG - Ohms  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 17. Resistive Turn-off Switching Times  
vs. Collector Current  
275  
250  
225  
200  
175  
150  
125  
100  
75  
110  
105  
100  
95  
275  
250  
225  
200  
175  
150  
125  
100  
75  
108  
106  
104  
102  
100  
98  
t f  
t
d(off) - - - -  
RG = 1 , VGE = 15V  
t f  
t
d(off) - - - -  
RG = 1 , VGE = 15V  
Ω
Ω
VCE = 240V  
VCE = 240V  
I C = 60A  
TJ = 125ºC  
96  
I C = 120A  
94  
92  
90  
50  
90  
TJ = 25ºC  
50  
25  
88  
25  
85  
0
86  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
60 65 70 75 80 85 90 95 100 105 110 115 120  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_120N30B3(76)08-07-08-B  
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