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IXGH12N120A3

型号：

IXGH12N120A3

描述：

GenX3 1200V的IGBT[ GenX3 1200V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

200 K

下载PDF手册
GenX3TM 1200V  
IGBTs  
VCES = 1200V  
IC90 = 12A  
VCE(sat) ≤ 3.0V  
IXGA12N120A3  
IXGP12N120A3  
IXGH12N120A3  
High Surge Current  
TO-263 AA (IXGA)  
Ultra-Low Vsat PT IGBTs for  
up to 3kHz Switching  
G
S
D (Tab)  
TO-220AB (IXGP)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
D (Tab)  
S
IC25  
IC90  
TC = 25°C  
TC = 90°C  
22  
12  
A
A
TO-247 (IXGH)  
ICM  
TC = 25°C, 1ms  
60  
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 24  
A
(RBSOA)  
Clamped Inductive Load  
VCE ≤ 0.8 • VCES  
G
PC  
TC = 25°C  
100  
W
D
S
D (Tab)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb.  
Nm/lb.in.  
z Optimized for Low Conduction Losses  
z International Standard Packages  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
1200  
2.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z Power Inverters  
z UPS  
5.0  
z Motor Drives  
10 μA  
275 μA  
z SMPS  
TJ = 125°C  
TJ = 125°C  
z PFC Circuits  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
VCE(sat)  
IC = IC90, VGE = 15V, Note 1  
2.40  
2.75  
3.0  
V
V
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100212B(11/10)  
IXGA12N120A3 IXGP12N120A3  
IXGH12N120A3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
8.8  
44  
Max.  
TO-263 Outline  
gfs  
IC = IC90, VCE = 10V, Note 1  
5.2  
S
A
IC(on)  
VGE = 10V, VCE = 10V, Note 1  
Cies  
Coes  
Cres  
550  
30  
8
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
IC = IC90, VGE = 15V, VCE = 600V  
Qg  
20.4  
3.1  
nC  
nC  
nC  
Qge  
Qgc  
1 = Gate  
2 = Collector  
3 = Emitter  
4 = Collector  
8.5  
Resistive Switching Times, TJ = 25°C  
IC = IC90, VGE = 15V  
td(on)  
tr  
td(off)  
tf  
35  
140  
62  
ns  
ns  
ns  
ns  
VCE = 960V, RG = 10Ω  
1035  
td(on)  
35  
ns  
Resistive Switching Times, TJ = 125°C  
IC = IC90, VGE = 15V  
tr  
td(off)  
tf  
167  
70  
1475  
ns  
ns  
ns  
VCE = 960V, RG = 10Ω  
RthJC  
RthCS  
1.25 °C/W  
TO-247  
TO-220  
0.21  
0.50  
°C/W  
°C/W  
TO-220 Outline  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
TO-247 Outline  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
∅ P  
1
2
3
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
1 = Gate 2 = Collector  
3 = Emitter  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
e
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Terminals: 1 - Gate  
3 - Emitted  
2 - Collector  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGA12N120A3 IXGP12N120A3  
IXGH12N120A3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
24  
20  
16  
12  
8
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
13V  
13V  
11V  
10V  
8V  
7V  
9V  
11V  
10V  
9V  
8V  
6V  
5V  
7V  
4
6V  
5V  
0
0.0  
0.0  
5
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
6.0  
15  
0
-50  
3
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
24  
20  
16  
12  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
VGE = 15V  
13V  
11V  
10V  
I C = 24A  
8V  
7V  
9V  
I C = 12A  
6V  
5V  
4
I C = 6A  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
35  
30  
25  
20  
15  
10  
5
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 24A  
12A  
6A  
0
6
7
8
9
10  
11  
12  
13  
14  
4
5
6
7
8
9
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGA12N120A3 IXGP12N120A3  
IXGH12N120A3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I C = 12A  
I G = 10mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
40  
1
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Reverse-Bias Safe Operating Area  
Fig. 10. Capacitance  
28  
24  
20  
16  
12  
8
1,000  
100  
10  
C
C
ies  
oes  
TJ = 125ºC  
C
res  
RG = 10Ω  
4
dv / dt < 10V / ns  
= 1 MHz  
5
f
0
1
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
0
10  
15  
20  
25  
30  
35  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaaaaa  
3.00  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA12N120A3 IXGP12N120A3  
IXGH12N120A3  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
240  
220  
200  
180  
160  
140  
120  
100  
240  
220  
200  
180  
160  
140  
120  
100  
RG = 10Ω , VGE = 15V  
VCE = 960V  
RG = 10Ω , VGE = 15V  
VCE = 960V  
TJ = 125ºC  
I C = 24A  
I C = 12A  
TJ = 25ºC  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
100  
260  
240  
220  
200  
180  
160  
140  
140  
tf  
td(off) - - - -  
tr  
td(on)  
- - - -  
90  
80  
70  
60  
50  
40  
30  
20  
120  
100  
80  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 960V  
VCE = 960V  
I C = 12A  
I C = 24A  
I C = 12A  
60  
I C = 24A  
40  
20  
800  
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
300  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
2200  
2000  
1800  
1600  
1400  
1200  
1000  
800  
110  
100  
90  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
700  
tf  
td(off)  
- - - -  
tf  
td(off) - - - -  
600  
500  
400  
300  
200  
100  
0
TJ = 125ºC, VGE = 15V  
RG = 10Ω, VGE = 15V  
VCE = 960V  
VCE = 960V  
I C = 12A  
TJ = 125ºC  
80  
70  
TJ = 25ºC  
60  
I C = 24A  
50  
40  
600  
30  
0
30  
60  
90  
120  
150  
180  
210  
240  
270  
300  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
RG - Ohms  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_12N120A3(2M)02-11-10  
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