IXGH 12N60BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
5
11
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
860
100
15
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
32
10
10
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
20
20
ns
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC90, VGE = 15 V, L = 300 mH
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
VCE = 0.8 • VCES, RG = Roff = 18 W
150
120
0.5
250
270
0.8
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Eoff
mJ
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
20
20
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 0.8 • VCES, RG = Roff = 18 W
Eon
td(off)
tfi
0.5
200
200
0.8
mJ
ns
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
ns
N
1.5 2.49 0.087 0.102
Eoff
mJ
RthJC
RthCK
IGBT
1.25 K/W
K/W
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 15A; TVJ = 150°C
TVJ 25°C
1.3
V
V
=
2.5
2.5
IRM
VR = 100 V; IF =25A; -diF/dt = 100 A/ms
L < 0.05 mH; TVJ = 100°C
2
A
trr
IF = 1 A; -di/dt = 50 A/ms;
VR = 30 V TJ = 25°C
35
ns
RthJC
Diode
1.6 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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