IXGH 15N120B2D1
IXGT 15N120B2D1
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
TO-247 AD Outline
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
12
15
S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Cies
1700
95
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
pF
pF
Cres
38
Qg
86
13
26
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
td(on)
tri
td(off)
tfi
25
ns
ns
ns
ns
mJ
15
1 = Gate
VCE = 960 V, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
2 = Collector
3 = Emitter
Tab = Collector
165 240
137 255
,
Eoff
1.4
2.3
td(on)
tri
25
18
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
Eon
td(off)
tfi
0.60
260
305
2.8
mJ
ns
VCE = 960 V, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
ns
,
Eoff
mJ
RthJC
RthCK
0.65 K/W
K/W
TO-247
0.25
TO-268 Outline
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IF
TestConditions
min. typ. max.
TC = 100°C
15
A
VF
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V, TJ = 125°C
2.8
V
V
2.1
IRM
trr
IF = 25 A; -diF/dt = 100 A/μs, VR = 100 V
VGE = 0 V; TJ = 100°C
6
165
A
ns
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
RthJC
1.6 K/W
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
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