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IXGH16N170A_05

型号：

IXGH16N170A_05

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

169 K

下载PDF手册
IXGH 16N170A  
IXGT 16N170A  
IXGH 16N170AH1  
IXGT 16N170AH1  
VCES  
IC25  
= 1700 V  
16 A  
High Voltage  
IGBT  
=
VCE(sat) = 5.0 V  
tfi(typ)  
=
70 ns  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
H1  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
TO-268(IXGT)  
TO-247 (IXGH)  
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
E
IC25  
IC90  
IF90  
ICM  
TC = 25°C  
16  
11  
17  
40  
A
A
A
A
C (TAB)  
TC = 90°C  
TC = 90°C, Diode  
TC = 25°C, 1 ms  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10Ω  
Clamped inductive load  
ICM = 40  
@ 0.8 VCES  
A
G
C
TAB)  
E
tSC  
PC  
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω  
TC = 25°C  
10  
μs  
G = Gate  
E=Emitter  
C = Collector,  
TAB = Collector  
190  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
z High blocking voltage  
TJM  
Tstg  
Md  
z High current handling capability  
z MOS Gate turn-on  
-55 ... +150  
Mounting torque (M3)  
TO-247  
1.13/10Nm/lb.in.  
- drive simplicity  
z Rugged NPT structure  
z Molding epoxies meet UL 94 V-0  
flammability classification  
z SONIC-FRDTM fast recovery copack  
diode  
z International standard packages  
JEDEC TO-268 and  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10s  
300  
260  
°C  
°C  
Weight  
TO-247  
TO-268  
6
4
g
g
JEDEC TO-247 AD  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Applications  
min. typ. max.  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 250 μA, VCE = VGE  
1700  
3.0  
V
V
5.0  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V, Note 1  
16N170A  
16N170AH1  
50  
100  
750  
μA  
μA  
μA  
TJ = 125°C 16N170A  
16N170AH1  
1.5 mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = IC90, VGE = 15 V  
±100  
5.0  
nA  
z High power density  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
4.0  
4.8  
V
V
TJ = 125°C  
DS99235A(06/05)  
© 2005 IXYS All rights reserved  
IXGH/IXGT 16N170A  
IXGH/IXGT 16N170AH1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
min. typ.  
max.  
IC = IC25; VCE = 10 V  
Note 2  
7
13  
S
∅ P  
Cies  
1620  
83  
pF  
Coes  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
16N170A  
pF  
pF  
16N170AH1 110  
Cres  
31  
pF  
Qg  
83  
10  
31  
nC  
nC  
nC  
e
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
36  
57  
ns  
ns  
Inductive load, TJ = 25°C  
IC = IC25, VGE = 15 V, RG = 10 Ω  
VCE = 0.5 VCES ,Note 3  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
160  
70  
300 ns  
150 ns  
1.5 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eoff  
0.85  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
38  
59  
ns  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Inductive load, TJ = 125°C  
IC = IC25, VGE = 15 V, RG = 10 Ω  
VCE = 0.5 VCES ,Note 3  
.780 .800  
.177  
∅P 3.55  
Q
3.65  
.140 .144  
Eon  
16N170A  
1.5  
mJ  
mJ  
5.89  
6.40 0.232 0.252  
16N170AH1 2.5  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
td(off)  
tfi  
175  
155  
2.0  
ns  
ns  
Eoff  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.65 K/W  
K/W  
(TO-247)  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
Symbol  
TestConditions  
min. typ.  
max.  
(TJ = 25°C unless otherwise specified)  
VF  
IF = 20A, VGE = 0 V, Note 2  
2.5  
2.9  
V
V
TJ = 125°C  
2.5  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
trr  
IF = 20A, VGE = 0 V, -diF/dt = 450 A/μs  
230  
400  
23  
ns  
ns  
A
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
VR = 1200 V  
TJ = 125°C  
IRM  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
TJ = 125°C  
27  
A
.75  
.83  
.016 .026  
RthJC  
0.9 K/W  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
Notes:1. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
2.40  
2.70  
2. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
L1  
1.20  
1.40  
.047 .055  
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG.  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGH/IXGT 16N170A  
IXGH/IXGT 16N170AH1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25 ºC  
16  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 15V  
GE  
V
= 15V  
13V  
11V  
9V  
GE  
13V  
11V  
7V  
6V  
9V  
7V  
5V  
6
4
5V  
6
2
0
1
1
5
2
3
4
5
7
0
3
6
9
12 15 18 21 24 27 30  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
16  
14  
12  
10  
8
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
GE  
= 15V  
13V  
11V  
9V  
V
GE  
= 15V  
I
= 16A  
C
7V  
6V  
I
I
= 8A  
= 4A  
6
C
C
4
5V  
2
0
2
3
4
5
VCE - Volts  
6
7
8
9
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
10  
9
40  
35  
30  
25  
20  
15  
10  
5
T
J
= 25 C  
º
I
= 16A  
8A  
C
8
4A  
7
6
5
T = 125ºC  
J
25 C  
º
4
-40 C  
º
3
0
2
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
6
7
8
9 10 11 12 13 14 15  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGH/IXGT 16N170A  
IXGH/IXGT 16N170AH1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
18  
16  
14  
12  
10  
8
6
5
4
3
2
1
T = 125ºC  
J
T = -40ºC  
J
V
= 15V  
GE  
CE  
25ºC  
125ºC  
V
= 850V  
I
= 24A  
C
I
= 16A  
= 8A  
C
C
6
4
I
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
2.75  
R
=10Ω  
R
=10Ω  
G
G
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
I = 32A  
C
V
V
= 15V  
V
GE  
V
CE  
= 15V  
GE  
CE  
T = 125ºC  
J
= 850V  
= 850V  
I
= 16A  
C
T = 25ºC  
J
I
= 8A  
C
25 35 45 55 65 75 85 95 105 115 125  
8
12  
16 20  
I C - Amperes  
24  
28  
32  
T - Degrees Centigrade  
J
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
250  
225  
200  
175  
150  
125  
100  
75  
td(off)  
td(off)  
tfi  
tfi  
- - - - - -  
- - - - - -  
T = 125ºC  
T = 125ºC  
J
R
=10Ω  
G
J
V
V
= 15V  
GE  
CE  
V
= 15V  
GE  
CE  
= 850V  
V
= 850V  
I
= 16A  
I
= 32A  
C
C
I
= 8A  
C
T = 25ºC  
J
50  
10  
20  
30 40  
50 60  
R G - Ohms  
70 80  
90 100  
8
12  
16 20  
I C - Amperes  
24  
28  
32  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH/IXGT 16N170A  
IXGH/IXGT 16N170AH1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
250  
225  
200  
175  
150  
125  
100  
75  
16  
14  
12  
10  
8
td(off)  
V
= 850V  
CE  
tfi  
- - - - - -  
I
I
= 8A  
C
G
R
=10Ω  
I
= 8A  
C
G
= 10mA  
V
V
= 15V  
GE  
CE  
= 850V  
I
= 16A  
C
6
4
I
= 32A  
C
2
50  
0
25 35 45 55 65 75 85 95 105 115 125  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
1000  
100  
45  
f = 1 MHz  
40  
35  
30  
25  
20  
15  
10  
5
C
ies  
C
oes  
T = 125ºC  
J
R
=10Ω  
dV/dT < 10V/ns  
G
C
res  
10  
0
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
100 300 500 700 900 1100 1300 1500 1700  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2005 IXYS All rights reserved  
IXGH/IXGT 16N170A  
IXGH/IXGT 16N170AH1  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from data gathered during objective characterizations of preliminary engineer-  
ing lots; but also may yet contain some information supplied during a subjective pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions, and  
dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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