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IXGH16N170_06

型号：

IXGH16N170_06

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

152 K

下载PDF手册
IXGH 16N170  
IXGT 16N170  
VCES  
IC25  
= 1700 V  
32 A  
High Voltage  
IGBT  
=
VCE(sat) = 3.5 V  
TO-268 (D3-Pak) (IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
G
E
TJ = 25°C to 150°C; RGE = 1 MΩ  
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
TO-247(IXGH)  
IC25  
IC90  
ICM  
TC = 25°C  
32  
16  
80  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
TAB)  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load  
ICM = 40  
@ 0.8 VCES  
A
G
C
E
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
PC  
TC = 25°C  
190  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z International standard packages  
JEDEC TO-268 and  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
JEDEC TO-247 AD  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
z High current handling capability  
z MOS Gate turn-on  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- drive simplicity  
z Rugged NPT structure  
z Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z DC servo and robot drives  
z DC choppers  
Min. Typ. Max.  
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 250 μA, VCE = VGE  
1700  
3.0  
V
V
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
5.0  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
50  
500  
μA  
μA  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100  
3.5  
nA  
z High power density  
VCE(sat)  
TJ = 25°C  
TJ = 125°C  
2.7  
3.3  
V
V
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
DS98996C(07/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXGH 16N170  
IXGT 16N170  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-247 (IXGH) Outline  
gfs  
IC = IC90; VCE = 10 V,  
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
10  
14  
65  
S
A
∅ P  
1
2
3
IC(ON)  
VGE = 10V, VCE = 10V  
Cies  
Coes  
Cres  
1650  
75  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
26  
e
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
Qg  
78  
13  
24  
nC  
nC  
nC  
3 - Source  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
45  
48  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
400  
600 ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
770 1100 ns  
20.80 21.46  
15.75 16.26  
Eoff  
9.3  
14 mJ  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
48  
42  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
1.5  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
6.15 BSC  
430  
1170  
TO-268 (IXGT) Outline (D3-Pak)  
Eoff  
11.2  
mJ  
RthJC  
0.65 °C/W  
RthCS  
(TO-247)  
0.25  
°C/W  
Ref: IXYS CO 0052 RA  
7,005,734B2  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2  
IXGH 16N170  
IXGT 16N170  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
32  
28  
24  
20  
16  
12  
8
16 0  
14 0  
12 0  
10 0  
80  
60  
40  
20  
0
VG E = 17V  
15V  
VG E = 17V  
13V  
11V  
1 5 V  
1 3 V  
1 1V  
9V  
7V  
9V  
7V  
4
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
-50  
3
2
4
6
8
10  
12  
14  
16  
18  
150  
10  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
32  
28  
24  
20  
16  
12  
8
2
1. 8  
1. 6  
1. 4  
1. 2  
VG E = 17V  
15V  
VG E = 15V  
13V  
11V  
9V  
I C = 32A  
7V  
I C = 16A  
1
4
0.8  
0.6  
I C = 8A  
0
0.5  
1.5  
2.5  
3.5  
4.5  
5.5  
6.5  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
56  
48  
40  
32  
24  
16  
8
10  
9
8
7
6
5
4
3
2
1
T J = 25 C  
º
I C = 32A  
16 A  
TJ = 125  
25  
-40  
º
C
º
C
º
C
8A  
11  
0
5
6
7
8
9
10  
12  
13  
14  
15  
4
5
6
7
8
9
VGE - Volts  
VGE - Volts  
© 2006 IXYS CORPORATION All rights reserved  
IXGH 16N170  
IXGT 16N170  
Fig. 8. Dependence of Eoff on RG  
Fig. 7. Transconductance  
24  
22  
20  
18  
16  
14  
12  
10  
8
21  
18  
15  
12  
9
TJ = -40 C  
º
º
25 C  
I
C = 32A  
125  
º
C
TJ = 125 C  
º
VG E = 15V  
VC E = 1360V  
6
I
C = 16A  
3
0
0
16  
0
8
16  
24  
32  
40  
48  
56  
32  
80  
0
10  
20  
30  
40  
50  
60  
150  
40  
R G - Ohms  
I C - Amperes  
Fig. 9. Dependence of Eoff on IC  
Fig. 10. Dependence of Eoff on Temperature  
31  
28  
25  
22  
19  
24  
22  
20  
18  
16  
14  
12  
10  
RG = 10 Ohms  
RG = 50 Ohms - - - - -  
TJ = 125 C  
º
VG = 15V  
E
VG = 15V  
VC E = 1360V  
VC E = 1360V  
E
RG = 50 Ohms  
I
= 32A  
= 16A  
C
RG = 10 Ohms  
16  
13  
I
C
10  
7
18  
20  
22  
24  
26  
28  
30  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
I C - Amperes  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
15  
12  
9
10 0 0 0  
10 0 0  
10 0  
f = 1M Hz  
VC E = 600V  
C = 16A  
I G = 10mA  
I
C
ies  
6
C
C
oes  
res  
3
0
10  
10  
20  
30  
40  
50  
60  
70  
0
5
10  
15  
20  
25  
30  
35  
VCE - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH 16N170  
IXGT 16N170  
Fig. 13. Reverse-Bias Safe  
Operating Area  
45  
40  
35  
30  
25  
20  
15  
10  
5
= 125ºC  
T
J
R
= 10Ω  
G
dV/dT < 10V/ns  
0
100 300 500 700 900 1100 1300 1500 1700  
VC E - Volts  
Fig. 14. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS CORPORATION All rights reserved  
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