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IXGH20N120A3

型号：

IXGH20N120A3

描述：

GenX3 1200V的IGBT[ GenX3 1200V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

234 K

下载PDF手册
GenX3TM 1200V IGBTs  
VCES = 1200V  
IC110 = 20A  
VCE(sat) ≤ 2.5V  
IXGA20N120A3  
IXGP20N120A3  
IXGH20N120A3  
Ultra-Low Vsat PT IGBTs for  
up to 3 kHz Switching  
TO-263 AA (IXGA)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220AB (IXGP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
40  
20  
A
A
A
TO-247 (IXGH)  
120  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 10Ω  
Clamped Inductive Load  
ICM = 40  
A
V
@VCE ≤ 960  
PC  
TC = 25°C  
180  
W
G
C
E
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
C (Tab)  
-55 ... +150  
G = Gate  
C
= Collector  
E = Emitter  
Tab = Collector  
Md  
FC  
Mounting Torque (TO-247 & TO-220)  
Mounting Force (TO-263)  
1.13/10  
10..65 / 2.2..14.6  
Nm/lb.in.  
N/lb.  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Optimized for Low Conduction Losses  
z International Standard Packages  
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
z Power Inverters  
z UPS  
5.0  
V
25 μA  
z Motor Drives  
z SMPS  
TJ = 125°C  
TJ = 125°C  
1
±100  
2.5  
mA  
nA  
z PFC Circuits  
IGES  
VCE = 0V, VGE = ±20V  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.3  
2.5  
V
V
DS100046A(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA20N120A3 IXGP20N120A3  
IXGH20N120A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) AD Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 20A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
7
12  
S
Cies  
Coes  
Cres  
1075  
80  
pF  
pF  
pF  
27  
Qg  
50  
7.3  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = 20A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
16  
44  
ns  
ns  
mJ  
ns  
ns  
Inductive Load, TJ = 25°C  
IC = 20A, VGE = 15V  
2.85  
290  
715  
1 = Gate  
VCE = 960V, RG = 10Ω  
Note 2  
2 = Collector  
3 = Emitter  
Tab = Collector  
Eoff  
6.47  
mJ  
td(on)  
tri  
16  
50  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 20A, VGE = 15V  
Eon  
td(off)  
tfi  
5.53  
310  
mJ  
ns  
VCE = 960V, RG = 10Ω  
Note 2  
1220  
10.10  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.69 °C/W  
TO-220  
TO-247  
0.50  
0.21  
°C/W  
°C/W  
TO-220 (IXGP) Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
TO-263 (IXGA) Outline  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
4 - Collector  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGA20N120A3 IXGP20N120A3  
IXGH20N120A3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
40  
35  
30  
25  
20  
15  
10  
5
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
9V  
11V  
60  
7V  
5V  
9V  
40  
20  
7V  
0
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
4.0  
15  
0
4
8
12  
16  
20  
24  
28  
32  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
40  
35  
30  
25  
20  
15  
10  
5
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
VGE = 15V  
13V  
11V  
I C = 40A  
9V  
7V  
I C = 20A  
I C = 10A  
5V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
TJ = 25ºC  
TJ = - 40ºC  
25ºC  
125ºC  
I C = 40A  
20A  
10A  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
6
7
8
9
10  
11  
12  
13  
14  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA20N120A3 IXGP20N120A3  
IXGH20N120A3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I C = 20A  
I
G = 10 mA  
25ºC  
125ºC  
6
6
4
4
2
2
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
45  
40  
35  
30  
25  
20  
15  
10  
5
10,000  
1,000  
100  
= 1MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
G = 10Ω  
dv / dt < 10V / ns  
R
C
res  
0
10  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGA20N120A3 IXGP20N120A3  
IXGH20N120A3  
Fig. 12. Inductive Switching Energy Loss  
vs. Gate Resistance  
Fig. 13. Inductive Switching Energy Loss  
vs. Collector Current  
24  
22  
20  
18  
16  
14  
12  
10  
8
12  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
11  
E
E
on - - - -  
E
E
on - - - -  
off  
RG = 10  
off  
VGE = 15V  
Ω ,  
VCE = 960V  
TJ = 125ºC , VGE = 15V  
VCE = 960V  
10  
9
8
I C = 40A  
TJ = 125ºC  
7
6
TJ = 25ºC  
5
I C = 20A  
6
4
4
6
3
4
2
2
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
10  
15  
20  
25  
30  
35  
40  
45  
50  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss  
vs. Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
22  
20  
18  
16  
14  
12  
10  
8
11  
10  
9
1700  
1600  
1500  
1400  
1300  
1200  
1100  
1000  
900  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
E
E
on - - - -  
off  
t f i  
td(off)  
- - - -  
V
GE = 15V  
RG = 10Ω VGE = 15V  
,
TJ = 125ºC,  
VCE = 960V  
CE = 960V  
V
8
I C = 20A  
7
I C = 40A  
6
5
4
I C = 40A  
I C = 20A  
6
3
800  
4
2
700  
600  
2
1
10  
15  
20  
25  
30  
35  
40  
45  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
1400  
1300  
1200  
1100  
1000  
900  
350  
340  
330  
320  
310  
300  
290  
280  
270  
1400  
1300  
1200  
1100  
1000  
900  
360  
t f i  
td(off) - - - -  
t f i  
td(off)  
- - - -  
350  
340  
330  
320  
310  
300  
290  
280  
RG = 10Ω , VGE = 15V  
RG = 10Ω , VGE = 15V  
VCE = 960V  
VCE = 960V  
TJ = 125ºC  
I
= 40A  
C
I C = 20A  
TJ = 25ºC  
800  
800  
700  
700  
600  
600  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGA20N120A3 IXGP20N120A3  
IXGH20N120A3  
Fig. 19. Inductive Turn-on Switching Times  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
vs. Collector Current  
200  
180  
160  
140  
120  
100  
80  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
23  
tr i  
td(on) - - - -  
tr i  
td(on)  
- - - -  
22  
21  
20  
19  
18  
17  
16  
15  
RG = 10Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 960V  
VCE = 960V  
I C = 40A  
TJ = 125ºC  
TJ = 25ºC  
60  
I C = 20A  
60  
40  
40  
20  
20  
0
0
10  
15  
20  
25  
30  
35  
40  
45  
50  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times  
vs. Junction Temperature  
160  
140  
120  
100  
80  
28  
26  
24  
22  
20  
18  
16  
14  
t r i  
td(on)  
- - - -  
RG = 10Ω , VGE = 15V  
VCE = 960V  
I C = 40A  
60  
40  
I C = 20A  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_20N120A3(4L)10-01-08  
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