请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH28N120BD1

型号：

IXGH28N120BD1

描述：

高电压IGBT W /二极管[ High Voltage IGBT w/ Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

196 K

下载PDF手册
High Voltage IGBT  
w/ Diode  
VCES = 1200V  
IC25 = 50A  
VCE(sat) ≤ 3.5V  
tfi(typ) = 170ns  
IXGH28N120BD1  
IXGT28N120BD1  
TO-247AD (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
E
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXGT)  
IC25  
IC100  
IF90  
TC = 25°C ( Chip Capability )  
TC = 100°C  
TC = 90°C  
50  
28  
10  
A
A
A
G
E
ICM  
TC = 25°C, 1ms  
150  
ICM = 120  
0.8 • VCES  
250  
A
A
C (TAB)  
SSOA  
(RBSOA)  
PC  
VGE= 15V, TJ = 125°C, RG = 5Ω  
Clamped Inductive Load  
TC = 25°C  
G = Gate  
E = Emitter  
C
= Collector  
W
TAB = Collector  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
z International Standard Packages  
JEDEC TO-247AD & TO-268  
z IGBT and Anti-Parallel FRED for  
Resonant Power Supplies  
- Induction Heating  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-286  
6
4
g
g
- Rice Cookers  
z MOS Gate Turn-On  
z Fast Recovery Expitaxial Diode (FRED)  
- Soft Recovery with Low IRM  
Advantages  
z Saves Space (Two Devices in One  
Package)  
Easy to Mount with 1 Screw  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
(Isolated Mounting Screw Hole)  
Reduces Assembly Time and Cost  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
2.5  
5.0  
V
z
VCE = VCES, VGE= 0V  
50 μA  
TJ = 125°C, Note1  
250 μA  
Applications  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
• Switch-Mode and Resonant-Mode  
Power Supplies  
VCE(sat)  
IC  
= 28A, VGE = 15V, Note 2  
TJ = 125°C  
2.9  
2.8  
3.5  
V
V
• Uninterruptible Power Supplies (UPS)  
• DC Choppers  
• AC Motor Speed Drives  
• DC Servo and Robot Drives  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS98988G(08/09)  
IXGH28N120BD1  
IXGT28N120BD1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 28A, VCE = 10V, Note 2  
VCE = 25V, VGE = 0V, f = 1MHz  
15  
23  
S
Cies  
Coes  
Cres  
1700  
130  
45  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
92  
13  
35  
nC  
nC  
nC  
Qge  
Qgc  
IC = 28A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
td(off)  
tfi  
30  
20  
ns  
ns  
e
Inductive load, TJ = 25°C  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
IC = 28A, VGE = 15V  
3 - Source  
210  
170  
280 ns  
320 ns  
VCE = 0.8 • VCES, RG = 5Ω  
Note 3  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eoff  
2.2  
5.0 mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
35  
28  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 125°C  
IC = 28A, VGE = 15V  
1.4  
250  
340  
4.6  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
VCE = 0.8 • VCES, RG = 5Ω  
Note 3  
20.80 21.46  
15.75 16.26  
ns  
e
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
Eoff  
mJ  
L
L1  
.780 .800  
.177  
RthJC  
RthCK  
0.50 °C/W  
°C/W  
∅P 3.55  
3.65  
.140 .144  
(TO-247)  
0.21  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 (IXGT) Outline  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 10A, VGE = 0V, Note 2  
3.2  
V
V
TJ = 100°C  
2.3  
14  
IRM  
A
IF = 10A, VGE = 0V,  
-diF/dt = 400A/μs, VR = 600V  
trr  
trr  
120  
40  
ns  
ns  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
RthJC  
2.5 °C/W  
Notes:  
1. Part must be heatsunk for high-temp ICES measurement.  
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
3. Switching times & energy loses may increase for higher VCE(Clamp), TJ or RG.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXGH28N120BD1  
IXGT28N120BD1  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
º
C
@ 25 C  
º
56  
49  
42  
35  
28  
21  
14  
7
240  
210  
180  
150  
120  
90  
V
GE  
= 15V  
13V  
11V  
V
GE  
= 17V  
15V  
13V  
9V  
7V  
11V  
9V  
60  
30  
5V  
4
7V  
0
0
1
1
6
1.5  
2
2.5  
VC E - Volts  
3
3.5  
4.5  
5
0
-50  
4
2
4
6
8
VC E - Volts  
10 12 14 16 18 20  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
º
C
56  
49  
42  
35  
28  
21  
14  
7
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
13V  
11V  
GE  
V
= 15V  
GE  
I
= 56A  
C
9V  
7V  
I
I
= 28A  
= 14A  
C
C
5V  
0
1.5  
2
2.5 3  
VCE - Volts  
3.5  
4
4.5  
5
-25  
0
TJ - Degrees Centigrade  
25  
50  
75  
100 125 150  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
8
7
6
5
4
3
2
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 25ºC  
T
J
I
= 56A  
28A  
14A  
C
T = 125ºC  
J
25ºC  
-40ºC  
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
5
6
7
VG E - Volts  
8
9
10  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH28N120BD1  
IXGT28N120BD1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
T = -40ºC  
25ºC  
35  
30  
25  
20  
15  
10  
5
18  
16  
14  
12  
10  
8
J
T = 125ºC  
J
I
= 56A  
C
V
= 15V  
GE  
CE  
125ºC  
V
= 960V  
I
I
= 28A  
= 14A  
C
C
6
4
2
0
0
0
10 20 30 40 50 60 70 80 90 100  
I C - Amperes  
0
10 20 30 40 50 60 70 80 90 100  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
11  
10  
9
10  
9
8
7
6
5
4
3
2
1
0
R
= 5Ω  
G
T = 125ºC  
J
R
= 5Ω  
G
I
= 56A  
C
V
GE  
= 15V  
V
GE  
= 15V  
V
= 960V  
8
CE  
V
CE  
= 960V  
7
6
I
= 28A  
5
C
4
T = 25ºC  
J
3
2
1
I
= 14A  
C
0
10 15 20 25 30 35 40 45 50 55 60  
I C - Amperes  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
1400  
1200  
1000  
800  
450  
400  
350  
300  
250  
200  
150  
100  
td(off)  
tfi  
- - - - - -  
td(off)  
T = 125ºC  
J
tfi  
- - - - - -  
V
= 15V  
GE  
CE  
R
= 5Ω  
G
V
= 960V  
T = 125ºC  
J
V
V
= 15V  
GE  
CE  
= 960V  
600  
I
= 56A  
C
I
= 14A  
I
= 28A  
C
C
T = 25ºC  
J
400  
200  
0
10 20 30 40 50 60 70 80 90 100  
R G - Ohms  
10 15 20 25 30 35 40 45 50 55 60  
I C - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXGH28N120BD1  
IXGT28N120BD1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
450  
400  
350  
300  
250  
200  
150  
100  
16  
14  
12  
10  
8
td(off)  
V
= 600V  
CE  
I
= 56A  
tfi  
- - - - - -  
C
I
I
= 28A  
C
G
R
= 5Ω  
G
= 10mA  
I
= 14A  
C
V
= 15V  
GE  
CE  
V
= 960V  
I
= 28A  
C
6
4
I
= 14A  
C
2
I
= 56A  
C
0
25 35 45 55 65 75 85 95 105 115 125  
0
10 20 30 40 50 60 70 80 90 100  
Q G - nanoCoulombs  
TJ - Degrees Centigrade  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
1000  
100  
140  
120  
100  
80  
f = 1 MHz  
C
ies  
60  
C
oes  
T = 125ºC  
J
40  
R
= 5Ω  
G
dV/dT < 10V/ns  
20  
C
res  
10  
0
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
100  
300  
500 700  
VC E - Volts  
900  
1100  
1300  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.50  
0.10  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH28N120BD1  
IXGT28N120BD1  
30  
A
2000  
40  
A
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
VR = 600V  
nC  
25  
1500  
Qr  
30  
IF  
IRM  
IF= 20A  
IF= 10A  
IF= 5A  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
IF= 20A  
IF= 10A  
IF= 5A  
1000  
500  
0
20  
10  
0
TVJ= 25°C  
0
A/μs  
1000  
0
1
2
3
4 V  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 18. Forward current IF versus VF  
2.0  
Fig. 19. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 20. Peak reverse current IRM  
versus -diF/dt  
150  
120  
1.2  
μs  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
ns  
IF = 10A  
V
140  
VFR  
tfr  
trr  
tfr  
1.5  
Kf  
VFR  
130  
80  
40  
0
0.8  
IF= 20A  
IF= 10A  
1.0  
120  
IRM  
IF= 5A  
110  
0.4  
0.5  
Qr  
100  
90  
0.0  
0.
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 21. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 22. Recovery time trr versus -diF/dt  
Fig. 23. Peak forward voltage VFR and  
tfr versus diF/dt  
10  
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
1
2
3
1.449  
0.558  
0.493  
0.0052  
0.0003  
0.017  
ZthJC  
0.1  
0.01  
DSEP 8-12A  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24. Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_28N120B(5Z)4-21-04-A  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.206598s