IXGH32N100A3
IXGT32N100A3
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
IC = 32A, VCE = 10V, Note 1
14
20
S
fs
C
2250
130
48
pF
pF
pF
ies
∅P
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
87
16
35
nC
nC
nC
IC = 32A, VGE = 15V, VCE = 0.5 • VCES
Qgc
e
td(on)
tri
24
51
ns
ns
Dim.
Millimeter
Min.
Inches
Min. Max.
Max.
Inductive Load, TJ = 25°C
IC = 32A, VGE = 15V
Eon
td(off)
tfi
2.6
385
540
9.5
mJ
ns
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
700
800
14
VCE = 800V, RG = 10Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
ns
Eoff
mJ
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
td(on)
tri
52
23
ns
ns
20.80 21.46
15.75 16.26
Inductive Load, TJ = 125°C
IC = 32A, VGE = 15V
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
Eon
td(off)
tfi
4.2
400
770
13
mJ
ns
.780 .800
.177
VCE = 800V, RG = 10Ω
∅P 3.55
Q
3.65
.140 .144
ns
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eoff
mJ
RthJC
RthCS
0.42 °C/W
°C/W
TO-247
0.21
TO-268 Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Terminals: 1 - Gate
3 - Emitter
2 - Collector
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405 B2 6,759,692
6,710,463
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
by one or more of the following U.S. patents: 4,850,072
4,881,106
6,259,123 B1
6,306,728 B1
6,771,478 B2 7,071,537
