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IXGH36N60B3D4

型号：

IXGH36N60B3D4

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

201 K

下载PDF手册
GenX3TM 600V IGBT  
VCES = 600V  
IC110 = 36A  
VCE(sat) ≤ 1.8V  
IXGH36N60B3D4  
Medium speed low Vsat PT  
IGBT for 5-40kHz switching  
TO-247 AD (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
TAB  
C
E
IC110  
IF110  
ICM  
TC = 110°C  
36  
10  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
200  
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 5Ω  
Clamped inductive load @VCE ≤ 600V  
ICM = 80  
A
TAB = Collector  
PC  
TC = 25°C  
250  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z Optimized for low conduction and  
switching losses  
-55 ... +150  
z Square RBSOA  
Md  
Mounting torque  
1.13/10  
Nm/lb.in.  
z Anti-parallel ultra fast diode  
z International standard package  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
Weight  
6
g
Advantages  
z High power density  
z Low gate drive requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
z Power Inverters  
z UPS  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
z Motor Drives  
z SMPS  
5.0  
75  
ICES  
VCE = VCES  
VGE = 0V  
μA  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
TJ = 125°C  
500 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.5  
1.8  
V
DS99725B(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH36N60B3D4  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) AD Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
28  
42  
S
Cies  
Coes  
Cres  
2280  
120  
32  
pF  
pF  
pF  
Qg  
80  
12  
36  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
19  
24  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 30A, VGE = 15V  
0.54  
125  
100  
mJ  
200 ns  
160 ns  
1 = Gate  
VCE = 400V, RG = 5Ω  
2 = Collector  
3 = Emitter  
Tab = Collector  
Eoff  
0.80  
1.5 mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
19  
26  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 30A, VGE = 15V  
0.90  
180  
170  
1.50  
mJ  
ns  
VCE = 400V, RG = 5Ω  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.50 °C/W  
°C/W  
0.21  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VF  
IF = 10A, VGE = 0V, Note 1  
3.0  
V
V
TJ = 150°C  
TJ = 100°C  
1.7  
60  
trr  
ns  
IF = 10A, -diF/dt = 200A/μs  
IRM  
3
4
A
A
TJ = 25°C  
TJ = 100°C  
VR = 300V  
RthJC  
2.5 °C/W  
Notes:  
1.Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH36N60B3D4  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
300  
270  
240  
210  
180  
150  
120  
90  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
60  
5V  
30  
5V  
0
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.4  
15  
0
2
4
6
8
10  
12  
14  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.35  
1.30  
1.25  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
I C = 60A  
7V  
5V  
I C = 30A  
I C = 15A  
100  
0
-50  
-25  
0
25  
50  
75  
125  
150  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
240  
220  
200  
180  
160  
140  
120  
100  
80  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
I C = 60A  
30A  
15A  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH36N60B3D4  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
VCE = 300V  
I C = 30A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
30  
60  
90  
120  
150  
180  
210  
240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 5  
Ω
dV / dt < 10V / ns  
C
res  
10  
100 150 200 250 300 350 400 450 500 550 600 650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_36N60B3(55)5-05-08-C  
IXGH36N60B3D4  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
E
E
on - - - -  
VGE = 15V  
off  
RG = 5  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Ω ,  
TJ = 125ºC  
VCE = 400V  
I C = 60A  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 400V  
V
I C = 30A  
TJ = 25ºC  
I C = 15A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
10 20 30 40 50 60 70 80 90 100 110 120  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
4.0  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
tf  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
I C = 60A  
E
E
on - - - -  
VGE = 15V  
off  
RG = 5  
I C = 15A, 30A, 60V  
I C = 30A  
Ω ,  
VCE = 400V  
I C = 15A  
105 115 125  
25  
35  
45  
55  
65  
75  
85  
95  
0
10 20 30 40 50 60 70 80 90 100 110 120  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
240  
225  
210  
195  
180  
165  
150  
135  
120  
105  
90  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
230  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
tf  
td(off)  
- - - -  
RG = 5 , VGE = 15V  
t f  
td(off) - - - -  
Ω
RG = 5 , VGE = 15V  
Ω
VCE = 400V  
VCE = 400V  
TJ = 125ºC  
I C = 30A, 60A  
TJ = 25ºC  
I C = 15A  
75 85  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH36N60B3D4  
Fig. 19. Inductive Turn-on Switching Times  
vs. Collector Current  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
150  
135  
120  
105  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
25  
tr  
td(on) - - - -  
tr  
td(on - - - -  
)
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
TJ = 125ºC, VGE = 15V  
CE = 400V  
RG = 5 , VGE = 15V  
Ω
V
VCE = 400V  
TJ = 125ºC  
I C = 15A, 30A, 60A  
75  
60  
TJ = 25ºC  
45  
30  
15  
0
0
10 20 30 40 50 60 70 80 90 100 110 120  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times  
vs. Junction Temperature  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
tr  
td(on) - - - -  
RG = 5 , VGE = 15V  
Ω
I C = 60A  
VCE = 400V  
I C = 30A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_36N60B3(55)5-05-08-C  
IXGH36N60B3D4  
30  
A
250  
nC  
10  
A
TVJ = 100°C  
VR = 300 V  
IF  
= 5 A  
IF = 10 A  
IF = 20 A  
25  
200  
8
6
4
2
0
IRM  
TVJ = 150°C  
TVJ = 100°C  
IF  
Qr  
20  
15  
10  
5
IF  
= 5 A  
150  
100  
50  
IF = 10 A  
IF = 20 A  
TVJ = 100°C  
VR = 300 V  
TVJ = 25°C  
0
0
100  
A/μs  
-diF/dt  
0
1
2
3
V
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
VF  
Fig. 21. Forward current IF versus VF  
2.0  
Fig. 22. Reverse recovery charge Qr  
Fig. 23. Peak reverse current IRM  
60  
0.3  
ns  
TVJ = 100°C  
IF = 10 A  
TVJ = 100°C  
V
100  
μs  
VR = 300 V  
tfr  
VFR  
trr  
1.5  
Kf  
40  
20  
0
0.2  
0.1  
0
IF  
= 5 A  
80  
60  
40  
IF = 10 A  
IF = 20 A  
1.0  
IRM  
tfr  
VFR  
0.5  
Qr  
0.0  
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
10  
Fig. 25. Recovery time trr versus -diF/dt  
Fig. 26. Peak forward voltage VFR and  
Constants for ZthJC calculation:  
K/W  
1
i
Rthi (K/W)  
ti (s)  
1
2
1.449  
0.5578  
0.0052  
0.0003  
ZthJC  
0.1  
0.01  
DSEP 8-06B  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient thermal resistance junction-to-case  
NOTE: Fig. 2 to Fig. 6 shows typical values  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_36N60B3(55)5-05-08-C  
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