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IXGH40N120B2D1

型号：

IXGH40N120B2D1

描述：

高电压IGBT的W /二极管[ High Voltage IGBTs w/Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

214 K

下载PDF手册
High Voltage IGBTs  
w/Diode  
VCES = 1200V  
IC110 = 40A  
VCE(sat) ≤ 3.5V  
tfi(typ) = 140ns  
IXGH40N120B2D1  
IXGT40N120B2D1  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C (TAB)  
C
E
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Limited by Lead)  
TC = 110°C  
TC = 110°C  
75  
40  
25  
A
A
A
A
TO-268 (IXGT)  
TC = 25°C, 1ms  
200  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM  
=
80  
A
V
@ 0.8 ≤ VCES  
G
E
PC  
TC = 25°C  
380  
W
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
E = Emitter  
C
= Collector  
TAB = Collector  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
z International Standard Packages  
z IGBT and Anti-Parallel FRED for  
Resonant Power Supplies  
- Induction Heating  
- Rice Cookers  
z Square RBSOA  
z Fast Recovery Expitaxial Diode  
(FRED)  
- Soft Recovery with Low IRM  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES, VGE = 0V  
100 μA  
mA  
±100 nA  
3.5  
Advantages  
TJ = 125°C  
3
z High Power Density  
z Low Gate Drive Requirement  
IGES  
VCE = 0V, VGE = ± 20V  
VCE(sat)  
IC = 40A, VGE = 15V, Note 1  
2.9  
V
© 2009 IXYS CORPORATION, All RrightsRreserved  
DS99555B(02/09)  
IXGH40N120B2D1  
IXGT40N120B2D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
gfS  
IC = 40A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
23  
37  
S
Cies  
Coes  
Cres  
3360  
190  
63  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
138  
20  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
48  
e
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
td(on)  
21  
ns  
3 - Source  
Inductive load, TJ = 25°C  
tri  
Eon  
55  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
4.5  
mJ  
IC = 40A, VGE = 15V  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(off)  
tfi  
290  
140  
3.0  
ns  
ns  
VCE = 960V, RG = 2Ω  
270  
6.0  
Note 2  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
21  
58  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive load, TJ = 125°C  
IC = 40A, VGE = 15V  
VCE = 960V, RG = 2Ω  
Note 2  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
6.5  
350  
420  
8.3  
mJ  
ns  
.780 .800  
.177  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCS  
0.33 °C/W  
°C/W  
0.21  
TO-268 (IXGT) Outline  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IF = 30A, VGE = 0V  
VF  
2.8  
V
V
TJ = 150°C  
TJ = 100°C  
1.6  
IRM  
4
A
IF = 30A, -di/dt = 100A/μs,  
VR = 300V,VGE = 0V  
trr  
TJ = 100°C  
100  
ns  
RthJC  
0.9 °C/W  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
2. Switching Times may Increase for VCE (Clamp) > 0.8 • VCES  
Higher TJ or Increased RG.  
,
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXGH40N120B2D1  
IXGT40N120B2D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
250  
225  
200  
175  
150  
125  
100  
75  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
50  
7V  
25  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
4.5  
15  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 80A  
9V  
7V  
I C = 40A  
5V  
I C = 20A  
50 75  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
-50  
-25  
0
25  
100  
125  
150  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
120  
7
TJ = 25ºC  
100  
80  
60  
40  
20  
0
6
5
4
3
2
I C = 80A  
40A  
20A  
TJ = 125ºC  
25ºC  
- 40ºC  
5
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All RrightsRreserved  
IXGH40N120B2D1  
IXGT40N120B2D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I C = 40A  
I
G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
0
10 20 30 40 50 60 70 80 90 100 110 120  
IC - Amperes  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
C
ies  
oes  
TJ = 125ºC  
C
RG = 2Ω  
dV / dt < 10V / ns  
res  
10  
200 300 400 500 600 700 800 900 1000 1100 1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_40N120B2(6ZC) 3-30-06  
IXGH40N120B2D1  
IXGT40N120B2D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
I C = 80A  
E
E
on - - - -  
off  
I C = 80A  
RG = 2ꢀ VGE = 15V  
,
VCE = 960V  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 960V  
I C = 40A  
6
I C = 40A  
6
4
4
2
I C = 20A  
I C = 20A  
7
2
0
2
3
4
5
6
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
500  
480  
460  
440  
420  
400  
380  
360  
340  
320  
620  
580  
540  
500  
460  
420  
380  
340  
300  
260  
16  
14  
12  
10  
8
t f  
t
d(off) - - - -  
E
E
I C = 80A, 40A, 20V  
on - - - -  
TJ = 125ºC, VGE = 15V  
off  
RG = 2Ω VGE = 15V  
,
VCE = 960V  
TJ = 125ºC  
VCE = 960V  
6
TJ = 25ºC  
4
I C = 80A, 40A, 20V  
2
0
2
3
4
5
6
7
8
9
10  
20 25 30  
35 40 45 50 55 60  
IC - Amperes  
65 70 75 80  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times  
vs. Collector Current  
500  
450  
400  
350  
300  
250  
200  
150  
100  
450  
420  
390  
360  
330  
300  
270  
240  
210  
480  
440  
400  
360  
320  
280  
240  
200  
160  
120  
80  
460  
t f  
t
d(off) - - - -  
440  
420  
400  
380  
360  
340  
320  
300  
280  
260  
RG = 2Ω , VGE = 15V  
VCE = 960V  
t f  
t
d(off) - - - -  
RG = 2Ω , VGE = 15V  
TJ = 125ºC  
I C = 20A, 40A, 80A  
VCE = 960V  
I
= 20A, 80A  
C
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All RrightsRreserved  
IXGH40N120B2D1  
IXGT40N120B2D1  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times  
vs. Junction Temperature  
120  
110  
100  
90  
24  
23  
22  
21  
20  
19  
130  
120  
110  
100  
90  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
I C = 80A  
I C = 80A  
t r  
t
d(on) - - - -  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 960V  
80  
VCE = 960V  
80  
I C = 40A  
70  
I C = 40A  
70  
60  
60  
50  
50  
40  
40  
I C = 20A  
30  
30  
I C = 20A  
20  
20  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 20. Inductive Turn-on Switching Times  
vs. Collector Current  
120  
24  
23  
22  
21  
20  
19  
t r  
td(on)  
- - - -  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
RG = 2Ω , VGE = 15V  
25ºC < TJ < 125ºC  
VCE = 960V  
20 25 30 35 40 45 50 55 60 65 70 75 80  
IC - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS REF: G_40N120B2(6ZC) 3-30-06  
IXGH40N120B2D1  
IXGT40N120B2D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
IF= 60A  
IF= 30A  
IF= 15A  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/μs  
1000  
0
1
2
3 V  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 21. Forward current IF versus VF  
2.0  
Fig. 22. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23. Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ= 100°C  
TVJ= 100°C  
IF = 30A  
VR = 300V  
V
μs  
ns  
VFR  
15  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
800 1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 25. Recovery time trr versus -diF/dt  
Fig. 26. Peak forward voltage VFR and  
tfr versus diF/dt  
1
K/W  
Constants for ZthJC calculation  
i
Rth ( °C/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0397  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient thermal resistance junction to case  
© 2009 IXYS CORPORATION, All RrightsRreserved  
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