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IXGH48N60B3

型号：

IXGH48N60B3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

222 K

下载PDF手册
GenX3TM 600V IGBT  
IXGA48N60B3  
IXGP48N60B3  
IXGH48N60B3  
VCES = 600V  
IC110 = 48A  
VCE(sat) ≤ 1.8V  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-263 (IXGA)  
Symbol  
Test Conditions  
Maximum Ratings  
G
E
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
(TAB)  
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-220 (IXGP)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC110  
ICM  
TC = 110°C  
48  
A
A
(TAB)  
G
C
E
TC = 25°C, 1ms  
280  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 120  
A
TO-247 (IXGH)  
(RBSOA)  
Clamped inductive load @ ≤ 600V  
PC  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
C
E
-55 ... +150  
(TAB)  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
Md  
Mounting torque (TO-247)(TO-220)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Optimized for low conduction and  
switching losses  
z Square RBSOA  
z International standard packages  
Advantages  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
z High power density  
z Low gate drive requirement  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
Applications  
5.0  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
ICES  
VCE = VCES  
VGE = 0V  
25 μA  
250 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
1.8  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99938A(05/08)  
IXGA48N60B3 IXGP48N60B3  
IXGH48N60B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
28  
46  
S
Cies  
Coes  
Cres  
3980  
170  
45  
pF  
∅ P  
VCE = 25V, VGE = 0V, f = 1MHz  
pF  
pF  
Qg  
115  
21  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
40  
e
td(on)  
tri  
22  
25  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
ns  
Min. Max.  
Inductive Load, TJ = 25°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
0.84  
130  
116  
0.66  
mJ  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
200 ns  
200 ns  
1.20 mJ  
VCE = 480V, RG = 5Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Eoff  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
19  
25  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 125°C  
IC = 30A, VGE = 15V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
1.71  
190  
157  
1.30  
mJ  
ns  
.780 .800  
.177  
VCE = 480V, RG = 5Ω  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eoff  
mJ  
RthJC  
RthCS  
0.42 °C/W  
(TO-247)  
(TO-220)  
0.25  
0.50  
°C/W  
°C/W  
TO-220 (IXGP) Outline  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-263 (IXGA) Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
6,259,123 B1  
6,306,728 B1  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGA48N60B3 IXGP48N60B3  
IXGH48N60B3  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
Fig. 1. Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
60  
30  
0
0
2
4
6
8
10  
12  
14  
16  
150  
9.0  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
7V  
I C = 80A  
I C = 40A  
5V  
I C = 20A  
100  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
TJ = 25ºC  
I C = 80A  
40A  
20A  
60  
TJ = 125ºC  
25ºC  
- 40ºC  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA48N60B3 IXGP48N60B3  
IXGH48N60B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 40A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
0
20  
40  
60  
80  
100  
120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
140  
120  
100  
80  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
RG = 5Ω  
dV / dt < 10V / ns  
C
20  
res  
= 1 MHz  
5
f
10  
0
0
10  
15  
20  
25  
30  
35  
40  
100 150 200 250 300 350 400 450 500 550 600 650  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60B3D1(56) 05-05-08-A  
IXGA48N60B3 IXGP48N60B3  
IXGH48N60B3  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
E
E
on - - - -  
off  
TJ = 125ºC  
3.0  
I C = 60A  
RG = 5Ω VGE = 15V  
,
CE = 480V  
V
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
V
I C = 30A  
TJ = 25ºC  
I C = 15A  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.5  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
I C = 60A  
E
E
on - - - -  
off  
tf  
td(off)  
- - - -  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
RG = 5Ω VGE = 15V  
,
CE = 480V  
RG = 5 , VGE = 15V  
Ω
V
VCE = 480V  
I C = 60A, 15A  
I C = 30A  
I C = 30A  
I C = 15A  
105 115 125  
I
= 60A, 15A  
C
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
25  
35  
45  
55  
65  
75  
85  
95  
TJ - Degrees Centigrade  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Gate Resistance  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
230  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
t f  
td(off  
) - - - -  
TJ = 125ºC, VGE = 15V  
tf  
td(off) - - - -  
RG = 5Ω , VGE = 15V  
CE = 480V  
V
CE  
= 480V  
V
I C = 60A  
TJ = 125ºC  
I C = 30A  
TJ = 25ºC  
I C = 15A  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGA48N60B3 IXGP48N60B3  
IXGH48N60B3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
28  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGE = 15V  
t r  
RG = 5Ω , VGE = 15V  
td(on)  
- - - -  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
25ºC < TJ < 125ºC  
VCE = 480V  
VCE = 480V  
I C = 60A  
TJ = 25ºC  
I C = 30A  
I C = 15A  
TJ = 125ºC  
30 35  
0
5
10 15 20 25 30 35 40 45 50 55  
RG - Ohms  
15  
20  
25  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
I C = 60A  
t r  
t
d(on) - - - -  
RG = 5 , VGE = 15V  
Ω
VCE = 480V  
I C = 30A  
I C = 15A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_48N60B3D1(56) 05-05-08-A  
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