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IXGH48N60C3D1

型号：

IXGH48N60C3D1

描述：

GenX3 600V IGBT带二极管[ GenX3 600V IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

202 K

下载PDF手册
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 48A  
≤ 2.5V  
= 38ns  
IXGH48N60C3D1  
High speed PT IGBT for  
40-100kHz Switching  
TO-247  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
VGES  
VGEM  
IC25  
Continuous  
±20  
±30  
75  
V
V
A
A
A
A
A
E
Transient  
( TAB )  
TC = 25°C (Limited by Leads)  
TC = 110°C  
IC110  
ID110  
ICM  
48  
G = Gate  
E = Emitter  
C
= Collector  
TC = 110°C  
30  
TAB = Collector  
TC = 25°C, 1ms  
TC = 25°C  
250  
30  
IA  
EAS  
TC = 25°C  
300  
mJ  
Features  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 100  
@VCE < 600  
300  
A
V
z Optimized for Low Switching Losses  
z Square RBSOA  
W
z Anti-Parallel Ultra Fast Diode  
z Fast Switching  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z Avalanche Rated  
-55 ... +150  
z International Standard Package  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
TSOLD  
Advantages  
FC  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
z High Power Density  
z Low Gate Drive Requirement  
Weight  
Applications  
z High Frequency Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
z Motor Drives  
(TJ = 25°C, Unless Otherwise Specified)  
VGE(th) IC = 250μA, VCE = VGE  
ICES  
Min.  
Typ.  
Max.  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
3.0  
5.5  
V
VCE = VCES  
VGE = 0V  
300 μA  
1.75 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC  
= 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.3  
1.8  
2.5  
V
V
DS99945A(01/09)  
© 2009 IXYS CORPORATION, All rights reserved  
IXGH48N60C3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
gfs  
IC  
= 30A, VCE = 10V, Note 1  
20  
30  
S
Cies  
Coes  
Cres  
1960  
202  
66  
pF  
pF  
pF  
∅ P  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
77  
16  
32  
nC  
nC  
nC  
Qge  
Qgc  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
e
td(on)  
tri  
19  
26  
ns  
ns  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Inductive Load, TJ = 25°C  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eon  
td(off)  
tfi  
0.41  
mJ  
ns  
IC = 30A, VGE = 15V  
60  
38  
100  
VCE = 400V, RG = 3Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ns  
Eoff  
0.23  
0.42  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
19  
26  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive Load, TJ = 125°C  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
0.65  
92  
mJ  
ns  
.780 .800  
.177  
IC = 30A, VGE = 15V  
V
CE = 400V, RG = 3Ω  
∅P 3.55  
Q
3.65  
.140 .144  
95  
ns  
5.89  
6.40 0.232 0.252  
Eoff  
0.57  
mJ  
R
4.32  
5.49 .170 .216  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
0.21  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Symbol  
VF  
Test Conditions  
Min. Typ.  
Max.  
IF = 30A, VGE = 0V, Note 1  
2.7  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
TJ = 100°C  
TJ = 100°C  
4
A
ns  
ns  
100  
25  
RthJC  
0.9 °C/W  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH48N60C3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
11V  
9V  
7V  
60  
7V  
30  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.2  
2.8  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 60A  
9V  
I C = 30A  
7V  
I C = 15A  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 60A  
30A  
15A  
TJ = -125ºC  
25ºC  
- 40ºC  
7
8
9
10  
11  
12  
13  
14  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5 10.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All rights reserved  
IXGH48N60C3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I
I
C = 30A  
G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10 20 30 40 50 60 70 80 90 100 110 120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 3Ω  
dV / dt < 10V / ns  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_48N60C3D1(5D)01-23-09-B  
IXGH48N60C3D1  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Swiching  
Energy Loss vs. Collector Current  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
E
E
on - - - -  
T = 125ºC , V = 15V  
E
R
V
E
V
on - - - -  
= 15V  
off  
off  
J
GE  
= 3  
Ω ,  
G
GE  
V
= 400V  
CE  
= 400V  
CE  
I
= 60A  
C
T = 125ºC, 25ºC  
J
I
I
= 30A  
= 15A  
C
C
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0
5
10  
15  
20  
25  
30  
35  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Swiching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
130  
125  
120  
115  
110  
105  
100  
95  
350  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
325  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
t f  
td(off)  
- - - -  
E
R
E
on - - - -  
VGE = 15V  
off  
IC = 60A  
VGE  
= 3  
T = 125ºC,  
J
= 15V  
,
Ω
G
V
CE = 400V  
V
= 400V  
= 60A  
CE  
I
C
I
= 30A  
C
I
= 30A  
C
90  
I
= 15A  
C
85  
80  
75  
IC = 15A  
95 105 115 125  
70  
50  
25  
35  
45  
55  
65  
75  
85  
0
5
10  
15  
20  
25  
30  
35  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
140  
130  
120  
110  
100  
90  
110  
105  
100  
95  
160  
140  
120  
100  
80  
120  
110  
100  
90  
t f  
R
td(off)  
- - - -  
GE  
= 3 , V = 15V  
t f  
R
td(off)  
- - - -  
= 3 , VGE = 15V  
Ω
G
Ω
G
V
= 400V  
CE  
V
CE = 400V  
90  
85  
T = 125ºC  
J
I C = 60A  
80  
80  
80  
70  
75  
I C = 30A  
60  
70  
60  
70  
50  
65  
I C = 15A  
40  
60  
40  
60  
T = 25ºC  
J
30  
55  
20  
50  
20  
50  
15  
20  
25  
30  
35 40  
IC - Amperes  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All rights reserved  
IXGH48N60C3D1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
t r  
td(on)  
- - - -  
T = 125ºC, V = 15V  
t r  
R
td(on)  
- - - -  
= 3 , V = 15V  
J
GE  
Ω
G
GE  
V
= 400V  
CE  
V
= 400V  
25ºC < TJ < 125ºC  
CE  
I
= 60A  
C
60  
40  
20  
I
= 15A, 30A  
10  
C
0
0
5
15  
20  
25  
30  
35  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
25  
24  
23  
22  
21  
20  
19  
18  
17  
I
= 60A  
C
t r  
R
td(on) - - - -  
= 3 , V = 15V  
Ω
G
GE  
V
= 400V  
CE  
I
I
= 30A  
= 15A  
C
C
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_48N60C3D1(5D)01-23-09-B  
IXGH48N60C3D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
800  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
IF= 60A  
IF= 30A  
IF= 15A  
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/μs  
1000  
0
1
2
3 V  
VF  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
-diF/dt  
Fig. 22. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23. Peak reverse current IRM  
versus -diF/dt  
Fig. 21. Forward current IF versus VF  
2.0  
90  
20  
1.00  
TVJ= 100°C  
IF = 30A  
TVJ= 100°C  
VR = 300V  
V
μs  
ns  
VFR  
tfr  
trr  
1.5  
15  
10  
5
0.75  
0.50  
0.25  
0.
tfr  
IF= 60A  
IF= 30A  
IF= 15A  
Kf  
80  
VFR  
1.0  
0.5  
0.0  
IRM  
70  
Qr  
60  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 26. Peak forward voltage VFR  
and tfr versus diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 25. Recovery time trr versus  
-diF/dt  
1
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient thermal resistance junction to case  
© 2009 IXYS CORPORATION, All rights reserved  
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