IXGH60N30C3
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
IC = 0.5 • IC110, VCE = 10V
28
46
S
Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.
∅ P
Cies
Coes
Cres
3800
240
63
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg
101
21
nC
nC
nC
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
e
37
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
td(on)
tri
23
28
ns
ns
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive Load, TJ = 25°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 5Ω
Eon
td(off)
tfi
0.15
108
68
mJ
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
160
ns
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Eoff
0.30
0.55 mJ
20.80 21.46
15.75 16.26
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
td(on)
tri
22
28
ns
ns
.780 .800
.177
Inductive Load, TJ = 125°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 5Ω
∅P 3.55
Q
3.65
.140 .144
Eon
td(off)
tfi
0.26
120
101
0.40
mJ
ns
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
ns
Eoff
mJ
RthJC
RthCK
0.42 °C/W
°C/W
0.21
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
