请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH60N60C3

型号：

IXGH60N60C3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

164 K

下载PDF手册
GenX3TM 600V  
IGBT  
VCES = 600V  
IC110 = 60A  
VCE(sat) ≤ 2.5V  
tfi (typ) = 50ns  
IXGH60N60C3  
High Speed PT IGBT for  
40-100kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC110  
ICM  
TC = 25°C (Limited by Leads)  
TC = 110°C  
75  
60  
A
A
G = Gate  
C
Collector  
Tab = Collector  
E = Emitter  
TC = 25°C, 1ms  
360  
A
IA  
TC = 25°C  
TC = 25°C  
40  
A
EAS  
400  
mJ  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 3Ω  
ICM = 125  
A
Features  
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
z Optimized for Low Switching Losses  
z Square RBSOA  
PC  
TC = 25°C  
380  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z Avalanche rated  
z International Standard Package  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
z High Power Density  
z Low Gate Drive Requirement  
Weight  
Applications  
z High Frequency Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE= 0V  
V
V
5.5  
50 μA  
1 mA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 40A, VGE = 15V  
2.2  
1.7  
2.5  
V
V
© 2010 IXYS CORPORATION, All Rights Reserved  
DS99928B(01/10)  
IXGH60N60C3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
23  
38  
S
Cies  
Coes  
Cres  
2810  
210  
80  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
Qge  
Qgc  
115  
22  
nC  
nC  
nC  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
43  
td(on)  
tri  
Eon  
td(off)  
tfi  
21  
33  
ns  
ns  
e
Inductive Load, TJ = 25°C  
IC = 40A, VGE = 15V  
VCE = 480V, RG = 3Ω  
Note 2  
Terminals: 1 - Gate  
3 - Emitted  
2 - Collector  
Tab - Collector  
0.80  
70  
mJ  
ns  
110  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
50  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eoff  
0.45  
0.80  
mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
21  
33  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive Load, TJ = 125°C  
IC = 40A, VGE = 15V  
VCE = 480V, RG = 3Ω  
Note 2  
1.25  
112  
86  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
ns  
Eoff  
0.80  
mJ  
e
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
L
L1  
.780 .800  
.177  
RthJC  
RthCK  
0.33 °C/W  
°C/W  
0.21  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH60N60C3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
7V  
5V  
5V  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
0
2
4
6
8
10  
12  
14  
16  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
VGE = 15V  
13V  
11V  
I C = 80A  
9V  
I C = 40A  
7V  
5V  
I C = 20A  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 80A  
40A  
20A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
6
7
8
9
10  
VGE - Volts  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH60N60C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I
I
C = 40A  
G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
G = 3Ω  
dv / dt < 10V / ns  
R
C
res  
20  
= 1 MHz  
5
f
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH60N60C3  
Fig. 12. Inductive Switching Energy Loss  
vs. Gate Resistance  
Fig. 13. Inductive Switching Energy Loss  
vs. Collector Current  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
E
E
on - - - -  
off  
RG = 3  
VGE = 15V  
ꢀ ,  
CE = 480V  
V
I C = 80A  
TJ = 125ºC  
I C = 40A  
TJ = 25ºC  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching Energy Loss  
vs. Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
170  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
160  
150  
140  
130  
120  
110  
100  
90  
t f  
td(off)  
- - - -  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
E
E
on - - - -  
off  
RG = 3ꢀ VGE = 15V  
TJ = 125ºC, GE = 15V  
V
,
CE = 480V  
V
VCE = 480V  
I C = 80A  
I C = 80A  
I C = 40A  
I C = 40A  
80  
70  
60  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
160  
130  
120  
110  
100  
90  
180  
160  
140  
120  
100  
80  
140  
t f  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
130  
120  
110  
100  
90  
140  
120  
100  
80  
RG = 3Ω , VGE = 15V  
RG = 3ꢀ , VGE = 15V  
VCE = 480V  
VCE = 480V  
I
= 80A  
C
TJ = 125ºC  
I
= 40A  
C
60  
80  
60  
80  
TJ = 25ºC  
40  
70  
40  
70  
20  
60  
20  
60  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH60N60C3  
Fig. 19. Inductive Turn-on Switching Times  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
vs. Collector Current  
td(on)  
- - - -  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
15  
tr  
td(on) - - - -  
tr  
TJ = 125ºC, VGE = 15V  
CE = 480V  
RG = 3Ω , VGE = 15V  
V
VCE = 480V  
I C = 80A  
TJ = 25ºC, 125ºC  
60  
40  
I C = 40A  
20  
0
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
t r  
t
d(on) - - - -  
RG = 3Ω , VGE = 15V  
VCE = 480V  
I C = 80A  
I C = 40A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_60N60C3(6D)01-15-10-E  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.256948s