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IXGH6N170

型号：

IXGH6N170

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

138 K

下载PDF手册
IXGH 6N170  
IXGT 6N170  
VCES  
IC25  
= 1700 V  
12 A  
High Voltage  
IGBT  
=
VCE(sat) = 4.0 V  
tfi(typ)  
= 290 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
E
C (TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
12  
6
A
A
A
TO-247AD(IXGH)  
TC = 90°C  
TC = 25°C, 1 ms  
24  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
ICM = 12  
@ 0.8 VCES  
A
TAB)  
Clamped inductive load  
G
C
E
PC  
TC = 25°C  
75  
W
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z International standard packages  
JEDEC TO-268 and JEDEC  
TO-247 AD  
z High current handling capability  
z MOS Gate turn-on  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
°C  
°C  
260  
Md  
Mounting torque (M3) TO-247  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
z Rugged NPT structure  
z Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
z Capacitor discharge & pulser circuits  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 250 μA, VCE = VGE  
1700  
3.0  
V
V
5.0  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
10  
100  
μA  
μA  
TJ = 125°C  
TJ = 125°C  
Advantages  
IGES  
VCE = 0 V, VGE = ± 20 V  
±100  
nA  
z High power density  
z Suitable for surface mounting  
z Easy to mount with 1 screw,  
(isolated mounting screw hole)  
VCE(sat)  
IC = IC90, VGE = 15 V  
3.0  
4.0  
4.0  
V
V
© 2006 IXYS All rights reserved  
DS98989B(09/06)  
IXGH 6N170  
IXGT 6N170  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
gfs  
IC = IC90; VCE = 10 V,  
3
4 .5  
S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
∅ P  
IC(ON)  
VGE = 15V, VCE = 10V  
28  
A
Cies  
Coes  
Cres  
330  
23  
6
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
e
Qg  
20  
3.6  
8
nC  
nC  
nC  
Dim.  
Millimeter  
Min.  
Inches  
Min. Max.  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
40  
36  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 33 Ω  
250  
290  
1.5  
500 ns  
500 ns  
2.5 mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
20.80 21.46  
15.75 16.26  
,
Eoff  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
45  
40  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eon  
td(off)  
tfi  
0.5  
VCE = 0.8 VCES, RG = Roff = 33 Ω  
300  
300  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
TO-268 Outline  
Eoff  
2.0  
mJ  
RthJC  
1.65 K/W  
RthCK  
(TO-247)  
0.25  
K/W  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Min Recommended Footprint  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
7,063,975B2  
7,071,537  
IXGH 6N170  
IXGT 6N170  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Exteded Output Characteristics  
@ 25ºC  
12  
11  
10  
9
30  
27  
24  
21  
18  
15  
12  
9
V
= 15V  
V
= 15V  
GE  
GE  
13V  
11V  
13V  
8
11V  
9V  
7
9V  
7V  
6
5
4
3
6
2
7V  
3
1
0
0
0
1
2
3
4
5
6
0
-50  
0
2
4
6
8
10  
12  
14  
16  
125  
9
18  
150  
10  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
13V  
11V  
V
= 15V  
GE  
I
= 12A  
C
9V  
7V  
6
I
= 6A  
C
4
2
I
= 3A  
C
0
-25  
0
25  
50  
75  
100  
0
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 6. Transconductance  
Fig. 5. Input Admittance  
5
4.5  
4
10  
9
8
7
6
5
4
3
2
1
0
T
= -40ºC  
J
25ºC  
3.5  
3
125ºC  
2.5  
2
1.5  
1
TJ = 125ºC  
25ºC  
- 40ºC  
0.5  
0
1
2
3
4
5
6
7
8
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
VGE - Volts  
IC - Amperes  
© 2006 IXYS All rights reserved  
IXGH 6N170  
IXGT 6N170  
Fig. 7. Gate Charge  
Fig. 8. Capacitance  
16  
14  
12  
10  
8
1,000  
100  
10  
f = 1 MHz  
V
= 850V  
CE  
I
I
= 6A  
C
G
= 10 mA  
C
ies  
C
C
oes  
res  
6
4
2
0
1
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 10. Maximum Transient Thermal  
Resistance  
Fig. 9. Reverse-Bias Safe Operating Area  
13  
12  
11  
10  
9
10.0  
8
7
1.0  
6
5
4
3
T
J
= 125ºC  
2
R
G
= 33  
Ω
dV / dT < 10V / ns  
1
0
0.1  
100  
300  
500  
700  
900  
1100 1300 1500 1700  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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