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IXGH90N60B3

型号：

IXGH90N60B3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

173 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
VCES  
IC110  
= 600V  
= 90A  
IXGH90N60B3  
VCE(sat)  
tfi(typ)  
≤£ 1.8V  
= 148ns  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-247 AD (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (Limited by leads)  
TC = 110°C (Chip capability)  
TC = 25°C, 1ms  
75  
90  
A
A
A
C (TAB)  
500  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
ICM = 180  
A
G = Gate  
E = Emitter  
C
= Collector  
(RBSOA)  
Clamped inductive load @ VCE ≤ 600V  
TAB = Collector  
PC  
TC = 25°C  
660  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
Md  
Mounting torque  
1.13 / 10  
Nm/lb.in.  
z Optimized for low conduction and  
switching losses  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
z Square RBSOA  
z International standard package  
Weight  
6
g
Advantages  
z High power density  
z Low gate drive requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
5.0  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
ICES  
VCE = VCES  
VGE = 0V  
75  
750  
μA  
μA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
nA  
VCE(sat)  
IC = 90A, VGE = 15V, Note 1  
1.55  
1.62  
1.80  
V
V
DS99994(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH90N60B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
55  
90  
S
Cies  
Coes  
Cres  
8285  
525  
pF  
pF  
pF  
∅ P  
140  
Qg  
172  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 90A, VGE = 15V, VCE = 0.5 • VCES  
63  
e
td(on)  
tri  
31  
47  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
IC = 60A, VGE = 15V  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eon  
td(off)  
tfi  
1.32  
150  
148  
1.37  
mJ  
ns  
VCE = 480V, RG = 2Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
250  
ns  
Eoff  
2.40  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
29  
43  
ns  
ns  
20.80 21.46  
15.75 16.26  
Inductive load, TJ = 125°C  
IC = 60A,VGE = 15V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Eon  
td(off)  
tfi  
1.93  
220  
253  
2.80  
mJ  
ns  
.780 .800  
.177  
VCE = 480V,RG = 2Ω  
∅P 3.55  
Q
3.65  
.140 .144  
ns  
5.89  
6.40 0.232 0.252  
Eoff  
mJ  
R
4.32  
5.49 .170 .216  
RthJC  
RthCS  
0.19 °C/W  
°C/W  
0.21  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH90N60B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
11V  
VGE = 15V  
11V  
9V  
9V  
7V  
60  
7V  
5V  
40  
20  
5V  
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
0
1
2
3
4
5
6
7
8
9
10  
150  
7.5  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
180  
160  
140  
120  
100  
80  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 180A  
9V  
7V  
I C = 90A  
60  
40  
I C = 45A  
5V  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
I C = 180A  
90A  
45A  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH90N60B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
140  
120  
100  
80  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I
I
C = 90A  
G = 10 mA  
25ºC  
125ºC  
60  
6
40  
4
20  
2
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
200  
180  
160  
140  
120  
100  
80  
= 1 MHz  
f
C
ies  
C
oes  
60  
TJ = 125ºC  
C
40  
res  
RG = 2Ω  
dV / dt < 10V / ns  
20  
0
10  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH90N60B3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
8
7
6
5
4
3
2
1
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
E
E
on - - - -  
off  
RG = 2  
E
E
on - - - -  
off  
VGE = 15V  
Ω ,  
VCE = 480V  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
I C = 90A  
TJ = 125ºC  
I C = 60A  
TJ = 25ºC  
70  
30  
40  
50  
60  
80  
90  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
300  
290  
280  
270  
260  
250  
240  
700  
8
7
6
5
4
3
2
1
0
4.5  
t f  
t
d(off) - - - -  
V
E
E
on - - - -  
off  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
600  
500  
400  
300  
200  
100  
TJ = 125ºC, GE = 15V  
RG = 2Ω VGE = 15V  
,
CE = 480V  
V
VCE = 480V  
I C = 90A  
I C = 90A  
I C = 60A  
I C = 60A  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
50  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
230  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
t f  
t
d(off) - - - -  
t f  
td(off)  
- - - -  
RG = 2Ω , VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
I C = 90A, 60A  
TJ = 125ºC  
TJ = 25ºC  
0
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
30  
40  
50  
60  
70  
80  
90  
TJ - Degrees Centigrade  
IC - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH90N60B3  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
130  
120  
110  
100  
90  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
tr  
td(on)  
- - - -  
tr  
td(on) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 480V  
VCE = 480V  
I C = 90A  
TJ = 25ºC  
80  
I C = 60A  
70  
60  
TJ = 125ºC  
50  
40  
30  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
30 35 40 45 50 55 60 65 70 75 80 85 90  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
120  
100  
80  
60  
40  
20  
0
34  
33  
32  
31  
30  
29  
28  
t r  
t
d(on) - - - -  
RG = 2Ω , VGE = 15V  
VCE = 480V  
I C = 90A  
I C = 60A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_90N60B3(85) 4-24-08  
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