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IXGK100N170

型号：

IXGK100N170

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

166 K

下载PDF手册
Preliminary Technical Information  
VCES = 1700V  
IC90 = 95A  
VCE(sat) ≤ 3.0V  
High Voltage IGBT  
IXGN100N170  
E
SOT-227B, miniBLOC  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1700  
1700  
V
V
E c  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC90  
TC = 25°C  
TC = 90°C  
160  
95  
A
A
E c  
C
ICM  
TC = 25°C, 1ms  
600  
A
A
G = Gate, C = Collector, E = Emitter  
SSOA  
(RBSOA)  
tsc  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
Clamped inductive load @ 0.8 • VCES  
VGE= 15V, VCE = 1250V, TJ = 125°C  
RG = 10Ω, non repetitive  
ICM = 200  
c
either emitter terminal can be used as  
Main or Kelvin Emitter  
10  
μs  
(SCSOA)  
Features  
PC  
TJ  
TC = 25°C  
735  
W
z Optimized for low conduction and  
switching losses  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
z Square RBSOA  
z Isolation voltage 3000 V~  
z High current handling capability  
z International standard package  
VISOL  
50/60Hz  
IISOL ≤ 1mA  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
Md  
Mounting torque  
Terminal connection torque (M4)  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
z High power density  
z Low gate drive requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Power Inverters  
z UPS  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 3mA, VGE = 0V  
IC = 8mA, VCE = VGE  
1700  
3.0  
V
V
z Motor Drives  
z SMPS  
5.0  
ICES  
VCE = VCES  
VGE = 0V  
50 μA  
z PFC Circuits  
z Welding Machines  
TJ = 125°C  
5 mA  
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
2.5  
3.0  
V
DS100091(12/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGN100N170  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B miniBLOC (IXGN)  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
36  
64  
S
Cies  
Coes  
Cres  
9220  
455  
pF  
pF  
pF  
VCE = 25V, VGE = 0 V, f = 1MHz  
150  
Qg(on)  
Qge  
425  
65  
nC  
nC  
nC  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
Qgc  
186  
td(on)  
tri  
td(off)  
tfi  
td(on)  
tri  
td(off)  
tfi  
35  
192  
285  
395  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 100A, VGE = 15V  
VCE = 0.5 • VCES, RG = 1Ω  
35  
250  
285  
435  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 100A, VGE = 15V  
VCE = 0.5 • VCES, RG = 1Ω  
RthJC  
RthCK  
0.17 °C/W  
°C/W  
0.05  
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGN100N170  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
60  
7V  
5V  
40  
20  
5V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5.0  
15  
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
200  
180  
160  
140  
120  
100  
80  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C =200A  
9V  
7V  
I C = 100A  
60  
40  
5V  
20  
I C = 50A  
75  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
-50  
-25  
0
25  
50  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
I C = 200A  
TJ = - 40ºC  
25ºC  
125ºC  
100A  
60  
40  
50A  
6
20  
0
5
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGN100N170  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 850V  
I C = 100A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
700  
600  
500  
400  
300  
200  
100  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 1Ω  
dV / dt < 10V / ns  
C
res  
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_100N170(9P)12-10-08  
IXGN100N170  
Fig. 13. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 12. Resistive Turn-on Rise Time  
vs. Junction Temperature  
320  
280  
240  
200  
160  
120  
80  
320  
280  
240  
200  
160  
120  
80  
RG = 1Ω  
RG = 1Ω  
VGE = 15V  
VGE = 15V  
VCE = 850V  
VCE = 850V  
TJ = 125ºC  
I C = 100A  
TJ = 25ºC  
I C = 50A  
40  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 14. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 15. Resistive Turn-off Switching Times  
vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
50  
65  
60  
55  
50  
45  
40  
35  
30  
25  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
400  
tr  
td(on  
) - - - -  
tf  
RG = 1Ω, VGE = 15V  
td(off)  
- - - -  
380  
360  
340  
320  
300  
280  
260  
240  
TJ = 125ºC, VGE = 15V  
CE = 850V  
V
VCE = 850V  
I C = 50A  
I C = 100A  
I C = 50A  
I C = 100A  
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times  
vs. Collector Current  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
900  
800  
700  
600  
500  
400  
300  
200  
100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
420  
400  
380  
360  
340  
320  
300  
280  
260  
tf  
td(off  
) - - - -  
TJ = 125ºC, VGE = 15V  
tf  
RG = 1Ω, VGE = 15V  
td(off) - - - -  
VCE = 850V  
VCE = 850V  
I C = 50A  
TJ = 125ºC  
TJ = 25ºC  
I C = 100A  
1
2
3
4
5
6
7
8
9
10  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
IC - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: G_100N170(9P)12-10-08  
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