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IXGK64N60B3D1

型号：

IXGK64N60B3D1

描述：

GenX3 600V IGBT带二极管[ GenX3 600V IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

181 K

下载PDF手册
GenX3TM 600V IGBT  
with Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 64A  
≤£ 1.8V  
= 88ns  
IXGK64N60B3D1  
IXGX64N60B3D1  
Medium speed low Vsat PT  
IGBTs 5-40 kHz switching  
TO-264 (IXGK)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
(TAB)  
IC110  
TC = 110°C  
64  
400  
A
A
A
PLUS247 (IXGX)  
ICM  
TC = 25°C, 1ms  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
ICM = 200  
Clamped inductive load @ VCE ≤ 600V  
TC = 25°C  
460  
W
G
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
-55 ... +150  
E = Emitter  
TAB = Collector  
Md  
FC  
Mounting torque (TO-264)  
Mounting force (PLUS247)  
1.13 / 10  
20..120 / 4.5..27  
Nm/lb.in.  
N/lb.  
Features  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
z Optimized for low conduction and  
switching losses  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Square RBSOA  
z Anti-parallel ultra fast diode  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z Power Inverters  
z UPS  
VCE = VCES  
VGE = 0V  
700  
2.5 mA  
μA  
z Motor Drives  
z SMPS  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
1.80  
nA  
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
1.59  
DS99939A(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK64N60B3D1  
IXGX64N60B3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXGK) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
38  
64  
S
Cies  
Coes  
Cres  
4750  
260  
65  
pF  
pF  
pF  
Qg  
168  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
61  
td(on)  
tri  
25  
41  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
1.5  
138  
88  
mJ  
ns  
VCE = 480V, RG = 3Ω  
150  
1.9  
ns  
DIM  
INCHES  
MIN  
MILLIMETERS  
MAX  
MIN  
MAX  
Eoff  
1.0  
mJ  
A
A1  
b
b1  
b2  
c
D
E
e
J
0.185  
0.102  
0.037  
0.087  
0.110  
0.017  
1.007  
0.760  
.215 BSC  
0.000  
0.000  
0.779  
0.087  
0.122  
0.240  
0.330  
0.155  
0.085  
0.243  
0.209  
0.118  
0.055  
0.102  
0.126  
0.029  
1.047  
0.799  
4.70  
2.59  
0.94  
2.21  
2.79  
0.43  
25.58  
19.30  
5.46 BSC  
0.00  
0.00  
19.79  
2.21  
3.10  
6.10  
8.38  
3.94  
2.16  
6.17  
5.31  
3.00  
1.40  
2.59  
3.20  
0.74  
26.59  
20.29  
td(on)  
tri  
24  
40  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A,VGE = 15V  
Eon  
td(off)  
tfi  
2.70  
195  
131  
1.95  
mJ  
ns  
V
CE = 480V, RG = 3Ω  
ns  
0.010  
0.010  
0.842  
0.102  
0.138  
0.256  
0.346  
0.187  
0.093  
0.253  
0.25  
0.25  
21.39  
2.59  
3.51  
6.50  
8.79  
4.75  
2.36  
6.43  
Eoff  
mJ  
K
L
L1  
ØP  
Q
Q1  
ØR  
ØR1  
S
RthJC  
RthCS  
0.27 °C/W  
°C/W  
0.15  
PLUS247TM (IXGX) Outline  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
Test Conditions  
Min.  
Typ.  
Max.  
IF = 60A, VGE = 0V, Note 1  
2.1  
V
TJ = 150°C  
TJ = 100°C  
1.4  
V
IRM  
IF = 60A, VGE = 0V,  
-diF/dt = 100A/μs, VR = 100V  
8.3  
A
trr  
IF = 1A, -di/dt = 200A/μs, VR = 30V  
35  
ns  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
RthJC  
1.35 °C/W  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGK64N60B3D1  
IXGX64N60B3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
0
1
2
3
4
5
6
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
1.25  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
11V  
VGE = 15V  
I C = 100A  
9V  
7V  
I C = 50A  
I C = 25A  
5V  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 100A  
50A  
25A  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK64N60B3D1  
IXGX64N60B3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 50A  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
220  
200  
180  
160  
140  
120  
100  
80  
C
ies  
C
oes  
60  
TJ = 125ºC  
C
40  
res  
RG = 3  
Ω
dV / dt < 10V / ns  
= 1 MHz  
5
f
20  
0
10  
100  
200  
300  
400  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGK64N60B3D1  
IXGX64N60B3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
6
5
7
6
5
4
3
2
1
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-0.5  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
I C = 84A  
off  
RG = 3  
I C = 84A  
VGE = 15V  
,
Ω
VCE = 480V  
4
E
E
on - - - -  
off  
3
TJ = 125ºC , VGE = 15V  
VCE = 480V  
I C = 42A  
I C = 42A  
2
1
0
I C = 21A  
I C = 21A  
-1  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
0
5
10  
15  
20  
25  
30  
35  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
5.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
180  
170  
160  
150  
140  
130  
120  
110  
100  
900  
800  
700  
600  
500  
400  
300  
200  
100  
E
E
on - - - -  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-0.5  
off  
RG = 3  
TJ = 125ºC  
VGE = 15V  
,
Ω
tf  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
I C = 21A, 42A, 84A  
VCE = 480V  
I C = 42A  
TJ = 25ºC  
I C = 21A  
30 35  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
0
5
10  
15  
20  
25  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times  
vs. Collector Current  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
205  
190  
175  
160  
145  
130  
115  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
tf  
t
d(off) - - - -  
RG = 3 , VGE = 15V  
TJ = 125ºC  
Ω
VCE = 480V  
t f  
RG = 3 , VGE = 15V  
t
d(off) - - - -  
Ω
VCE = 480V  
I C = 42A, 84A  
TJ = 25ºC  
80  
80  
70  
I C = 21A  
60  
70  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGK64N60B3D1  
IXGX64N60B3D1  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times  
vs. Junction Temperature  
130  
120  
110  
100  
90  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
t r  
t
d(on) - - - -  
I C = 84A  
TJ = 125ºC, VGE = 15V  
I C = 84A  
VCE = 480V  
tr  
RG = 3  
t
d(on) - - - -  
VGE = 15V  
Ω
VCE = 480V  
80  
70  
I C = 42A  
60  
I C = 42A  
50  
40  
30  
20  
I C = 21A  
10  
I C = 21A  
95 105 115 125  
10  
0
5
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 20. Inductive Turn-on Switching Times  
vs. Collector Current  
75  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
tr  
RG = 3  
td(on  
- - - -  
)
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
,
VGE = 15V  
Ω
VCE = 480V  
25ºC < TJ < 125ºC  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_64N60B3(75) 4-09-08-A  
IXGK64N60B3D1  
IXGX64N60B3D1  
160  
A
140  
4000  
nC  
80  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
IRM  
Qr  
TVJ= 25°C  
TVJ=100°C  
IF=120A  
IF= 60A  
IF= 30A  
IF=120A  
IF= 60A  
IF= 30A  
40  
20  
0
TVJ=150°C  
A/μs  
-diF/dt  
0
1
2
V
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
VF  
Fig. 21. Forward current IF versus VF  
2.0  
Fig. 22. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 23. Peak reverse current IRM  
versus -diF/dt  
140  
20  
1.6  
μs  
TVJ= 100°C  
VR = 300V  
ns  
V
130  
VFR  
tfr  
trr  
1.5  
Kf  
15  
1.2  
tfr  
VFR  
120  
IF=120A  
IF= 60A  
IF= 30A  
1.0  
110  
10  
5
0.8  
0.4  
0.
IRM  
100  
90  
0.5  
Qr  
TVJ= 100°C  
IF = 60A  
0.0  
80  
0
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 25. Recovery time trr versus -diF/dt  
Fig. 26. Peak forward voltage VFR and tfr  
versus diF/dt  
10.0000  
1.0000  
ºC / W  
0.1000  
Z
(th)JC  
0.0100  
0.0010  
0.0001  
0.001  
0.00001  
0.0001  
0.01  
0.1  
1
10  
S
t
Fig. 27. Maximum transient thermal impedance junction to case (for diode)  
© 2008 IXYS CORPORATION, All rights reserved  
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 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

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 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

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 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

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