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IXGK82N120A3

型号：

IXGK82N120A3

描述：

GenX3 1200V的IGBT[ GenX3 1200V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

180 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 1200V  
IGBTs  
VCES = 1200V  
IC110 = 82A  
VCE(sat) ≤ 2.05V  
IXGK82N120A3  
IXGX82N120A3  
Ultra-Low-Vsat PT IGBTs for  
up to 3kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
1200  
1200  
±20  
V
V
V
V
G
C
Tab  
VCGR  
E
VGES  
VGEM  
Transient  
±30  
PLUS247TM (IXGX)  
IC25  
TC = 25°C ( Chip Capability )  
TC = 110°C  
260  
82  
A
A
A
A
IC110  
ILRMS  
ICM  
TC = 25°C (Lead RMS Limit)  
TC = 25°C, 1ms  
120  
580  
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 164  
A
G
C
E
Tab  
@ 0.8 • VCES  
PC  
TC = 25°C  
1250  
W
G = Gate  
C = Collector  
E
= Emitter  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Features  
z Optimized for Low Conduction Losses  
z International Standard Packages  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VCE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
z Power Inverters  
z UPS  
5.0  
V
z Motor Drives  
50 μA  
z SMPS  
Note 1, TJ = 125°C  
2.5 mA  
z PFC Circuits  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
VCE(sat)  
IC = IC110, VGE = 15V, Note 2  
TJ = 125°C  
1.83 2.05  
1.95  
V
DS100164A(10/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK82N120A3  
IXGX82N120A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA ( IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 2  
VCE = 25V, VGE = 0V, f = 1 MHz  
40  
66  
S
Cies  
Coes  
Cres  
Qg(on)  
Qge  
Qgc  
td(on)  
tri  
7700  
520  
190  
340  
54  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
146  
34  
Inductive load, TJ = 25°C  
IC = 80A, VGE = 15V  
VCE = 0.5 • VCES, RG = 2Ω  
Note 3  
75  
ns  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
Eon  
td(off)  
tfi  
5.5  
mJ  
ns  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
265  
780  
12.5  
32  
1300  
ns  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
Eoff  
td(on)  
tri  
20.0 mJ  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
ns  
Inductive load, TJ = 125°C  
77  
ns  
.215 BSC  
J
K
L
L1  
P
Q
Q1  
R
0.00  
0.00  
20.32 20.83  
2.29  
3.17  
6.07  
8.38  
3.81  
1.78  
6.04  
1.57  
0.25  
0.25  
.000  
.000  
.800  
.090  
.125  
.239  
.330  
.150  
.070  
.238  
.062  
.010  
.010  
.820  
.102  
.144  
.247  
.342  
.170  
.090  
.248  
.072  
IC = 80A, VGE = 15V  
Eon  
td(off)  
tfi  
6.7  
mJ  
340  
1250  
22.5  
ns  
ns  
VCE = 0.5 • VCES, RG = 2Ω  
2.59  
3.66  
6.27  
8.69  
4.32  
2.29  
Note 3  
Eoff  
RthJC  
RthCK  
mJ  
0.10 °C/W  
°C/W  
R1  
S
T
6.30  
1.83  
0.15  
PLUS247TM (IXGX) Outline  
Notes:  
1. Part must be heatsunk for high-temp ICES measurement.  
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK82N120A3  
IXGX82N120A3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
180  
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
60  
7V  
5V  
40  
40  
20  
0
0
0.0  
0.0  
6
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
15  
0
2
4
6
8
10  
12  
14  
150  
9.0  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
180  
160  
140  
120  
100  
80  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 164A  
9V  
7V  
I C = 82A  
60  
40  
I C = 41A  
20  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 164A  
TJ = 125ºC  
25ºC  
60  
- 40ºC  
82A  
41A  
40  
20  
0
7
8
9
10  
11  
12  
13  
14  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK82N120A3  
IXGX82N120A3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
100  
80  
60  
40  
20  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I C = 82A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
50  
100  
150  
200  
250  
300  
350  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
180  
160  
140  
120  
100  
80  
10,000  
C
ies  
1,000  
C
oes  
60  
40  
TJ = 125ºC  
RG = 2Ω  
20  
= 1 MHz  
5
f
dv / dt < 10V / ns  
C
res  
0
100  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
0
10  
15  
20  
VCE - Volts  
25  
30  
35  
40  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
0.200  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGK82N120A3  
IXGX82N120A3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
Energy Loss vs. Junction Temperature  
30  
25  
20  
15  
10  
5
12  
10  
8
30  
25  
20  
15  
10  
5
12  
10  
8
E
E
on - - - -  
off  
RG = 2  
E
E
on - - - -  
off  
VGE = 15V  
Ω ,  
VCE = 600V  
RG = 2Ω VGE = 15V  
,
VCE = 600V  
TJ = 125ºC  
I C = 80A  
6
6
4
4
TJ = 25ºC  
I C = 40A  
2
2
0
0
0
0
20  
20  
20  
30  
40  
50  
60  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 14. Inductive Turn-off  
Fig. 15. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Switching Times vs. Collector Current  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.8  
tf i  
t d(off)  
- - - -  
t f i  
t d(off) - - - -  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
RG = 2Ω , VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 40A, 80A  
TJ = 25ºC  
30  
40  
50  
IC - Amperes  
60  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-on  
Switching Times vs. Junction Temperature  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
42  
40  
38  
36  
34  
32  
30  
28  
26  
24  
120  
100  
80  
60  
40  
20  
0
36  
34  
32  
30  
28  
26  
24  
tr i  
t d(on)  
- - - -  
tr i  
t d(on)  
- - - -  
RG = 2Ω , VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 25ºC, 125ºC  
I C = 80A  
I C = 40A  
30  
40  
50  
IC - Amperes  
60  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: G_82N120A3(8T)6-23-09  
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