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IXGK82N120B3

型号：

IXGK82N120B3

描述：

GenX3 1200V的IGBT[ GenX3 1200V IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

218 K

下载PDF手册
Advance Technical Information  
GenX3TM 1200V  
IGBTs  
VCES = 1200V  
IC110 = 82A  
VCE(sat) ≤ 3.20V  
IXGK82N120B3  
IXGX82N120B3  
High-Speed Low-Vsat PT IGBTs  
for 3 - 20 kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
1200  
1200  
±20  
V
V
V
V
G
VCGR  
C
(TAB)  
E
VGES  
VGEM  
Transient  
±30  
PLUS247TM (IXGX)  
IC25  
TC = 25°C ( Chip Capability )  
TC = 110°C  
230  
82  
A
A
A
A
IC110  
ILRMS  
ICM  
TC = 25°C ( Lead RMS Limit )  
TC = 25°C, 1ms  
120  
500  
IA  
EAS  
TC = 25°C  
TC = 25°C  
41  
A
750  
mJ  
G
C
E
(TAB)  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 164  
A
(RBSOA)  
Clamped Inductive Load  
VCE < VCES  
G = Gate  
C = Collector  
E
= Emitter  
PC  
TC = 25°C  
1250  
W
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z Optimized for Low Conduction and  
Switching Losses  
z Square RBSOA  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
Nm/lb.in.  
N/lb.  
z High Avalanche Capability  
z International Standard Packages  
20..120/4.5..14.6  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z Low Gate Drive Requirement  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VCE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
5.0  
V
z Power Inverters  
z UPS  
z SMPS  
50 μA  
5 mA  
TJ = 125°C, Note 1  
z PFC Circuits  
z Welding Machines  
z Lamp Ballasts  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 2  
TJ = 125°C  
2.70  
2.64  
3.20  
V
V
DS100155(05/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK82N120B3  
IXGX82N120B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 2  
VCE = 25V, VGE = 0V, f = 1 MHz  
35  
60  
S
Cies  
Coes  
Cres  
Qg(on)  
Qge  
Qgc  
td(on)  
tri  
7900  
640  
170  
350  
50  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
mJ  
ns  
ns  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
150  
30  
Inductive load, TJ = 25°C  
IC = 80A, VGE = 15V  
VCE = 0.5 • VCES, RG = 2Ω  
Note 3  
77  
Eon  
td(off)  
tfi  
5.0  
210  
100  
3.3  
32  
180  
6.2  
Eoff  
td(on)  
tri  
mJ  
ns  
Inductive load, TJ = 125°C  
IC = 80A, VGE = 15V  
VCE = 0.5 • VCES, RG = 2Ω  
Note 3  
80  
ns  
Eon  
td(off)  
tfi  
6.8  
240  
520  
7.1  
mJ  
ns  
ns  
Eoff  
RthJC  
RthCK  
mJ  
0.10 °C/W  
°C/W  
0.15  
PLUS247TM (IXGX) Outline  
Notes:  
1. Part must be heatsunk for high-temp Ices measurement.  
2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
ADVANCE TECHNICAL INFORMATION  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK82N120B3  
IXGX82N120B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
320  
280  
240  
200  
160  
120  
80  
180  
160  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
11V  
9V  
9V  
7V  
5V  
60  
7V  
40  
40  
20  
5V  
6
0
0
0.0  
0.0  
6
0.5  
0.5  
7
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
4.5  
15  
0
2
4
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
180  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
I C = 164A  
9V  
I C = 82A  
7V  
5V  
60  
40  
I C = 41A  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
I C = 164A  
60  
TJ = 125ºC  
25ºC  
82A  
41A  
40  
- 40ºC  
20  
0
8
9
10  
11  
12  
13  
14  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK82N120B3  
IXGX82N120B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
C = 82A  
I G = 10mA  
I
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
0
50  
100  
150  
200  
250  
300  
350  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
TJ = 125ºC  
40  
RG = 2Ω  
= 1 MHz  
5
f
20  
dV / dt < 10V / ns  
C
res  
0
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
0
10  
15  
20  
VCE - Volts  
25  
30  
35  
40  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_82N120B3H1(8T)5-14-09  
IXGK82N120B3  
IXGX82N120B3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
11  
10  
9
10  
9
E
E
on - - - -  
E
E
on - - - -  
off  
RG = 2  
off  
TJ = 125ºC  
VGE = 15V  
Ω ,  
VCE = 600V  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
8
8
7
I C = 80A  
7
6
TJ = 25ºC  
6
5
5
4
I C = 40A  
4
3
3
2
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
9
8
7
6
5
4
3
2
1
0
10  
9
8
7
6
5
4
3
2
1
700  
650  
600  
550  
500  
450  
400  
350  
300  
900  
800  
700  
600  
500  
400  
300  
200  
100  
t f i  
td(off)  
- - - -  
V
GE = 15V  
E
E
on - - - -  
off  
TJ = 125ºC,  
VCE = 600V  
RG = 2Ω VGE = 15V  
,
VCE = 600V  
I C = 80A  
I C = 80A  
I C = 40A  
I C = 40A  
2
3
4
5
6
7
8
9
10  
11 12  
13 14 15  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
800  
700  
600  
500  
400  
300  
200  
100  
0
340  
320  
300  
280  
260  
240  
220  
200  
180  
700  
600  
500  
400  
300  
200  
100  
0
500  
t f i  
td(off) - - - -  
t f i  
td(off) - - - -  
450  
400  
350  
300  
250  
200  
150  
RG = 2Ω , VGE = 15V  
RG = 2Ω , VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 40A, 80A  
TJ = 25ºC  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK82N120B3  
IXGX82N120B3  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
140  
120  
100  
80  
36  
34  
32  
30  
28  
26  
24  
22  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
t r i  
td(on)  
- - - -  
tr i  
td(on)  
- - - -  
RG = 2Ω , VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 125ºC, 25ºC  
I C = 80A  
60  
40  
60  
I C = 40A  
20  
40  
20  
0
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
110  
100  
90  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
t r i  
td(on)  
- - - -  
RG = 2Ω , VGE = 15V  
VCE = 600V  
80  
I C = 80A  
70  
60  
50  
40  
I C = 40A  
30  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_82N120B3H1(8T)5-14-09  
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