IXGA 12N60CD1
IXGP 12N60CD1
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
TO-220AB(IXGP)Outline
J
min. typ. max.
I
= I ; V = 10 V,
5
11
S
C
C90
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
860
pF
V
= 25 V, V = 0 V, f = 1 MHz
100
pF
CE
GE
15
pF
Qg
32
10
10
nC
nC
nC
Qge
Qgc
I = I , V = 15 V, V = 0.5 V
C C90 GE CE CES
td(on)
tri
td(off)
tfi
20
20
ns
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Inductive load, TJ = 25°C
I = I , V = 15 V, L = 300 µH
C
C90
GE
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
V
= 0.8 V , R = R = 18 Ω
CE
CES
G
off
60
ns
C
D
9.91 10.66 0.390 0.420
Remarks:Switchingtimesmayincreasefor
(Clamp) > 0.8 V , higher T or
increasedR
55
ns
3.54
4.080.139 0.161
V
CE
CES
J
E
F
5.85
2.54
6.85 0.230 0.270
3.180.100 0.125
Eoff
0.09
mJ
G
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
td(on)
tri
20
20
ns
ns
Inductive load, TJ = 125°C
J
0.64
2.54
1.01 0.025 0.040
I = I , V = 15 V, L = 300 µH
K
BSC 0.100
BSC
C
C90
GE
Eon
td(off)
tfi
0.5
mJ
ns
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
V
= 0.8 V , R = R = 18 Ω
CE
CES
G
off
85 180
85 180
Remarks:Switchingtimesmayincreasefor
(Clamp) > 0.8 V , higher T or
increasedR
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
ns
V
CE
CES
J
Eoff
0.27 0.60 mJ
1.25 K/W
G
TO-263AA(IXGA)Outline
RthJC
RthCK
IGBT
0.25
K/W
ReverseDiode(FRED)
Characteristic Values
(T = 25°C, unless otherwise specified)
J
Symbol
VF
TestConditions
I = 15A; T = 150°C
min. typ. max.
1.7
2
V
V
F
VJ
T
=
25°C
2.5
2.5
VJ
IRM
V = 100 V; I =25A; -di /dt = 100 A/µs
A
R
F
F
L < 0.05 µH; T = 100°C
VJ
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
trr
I = 1 A; -di/dt = 50 A/µs;
F
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
V = 30 V T = 25°C
35
ns
R
J
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
RthJC
Diode
1.6 K/W
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
Min. Recommended Footprint
E
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
E1
e
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
