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IXGR60N60C3C1

型号：

IXGR60N60C3C1

描述：

GenX3TM 600V IGBT W /碳化硅反并联二极管[ GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

193 K

下载PDF手册
GenX3TM 600V IGBT  
w/ SiC Anti-Parallel  
Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 30A  
≤£ 2.5V  
= 50ns  
IXGR60N60C3C1  
(Electrically Isolated Back Surface)  
High Speed PT IGBT for 40-100kHz Switching  
ISOPLUS247TM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
E
Isolated Tab  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Limited by leads)  
TC = 110°C  
75  
30  
A
A
A
A
G = Gate  
E = Emitter  
C = Collector  
TC = 110°C  
TC = 25°C, 1ms  
13  
260  
Features  
IA  
TC = 25°C  
TC = 25°C  
40  
A
EAS  
400  
mJ  
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
z Optimized for Low Switching Losses  
z Square RBSOA  
z Isolated Mounting Surface  
z Anti-Parallel Ultra Fast Diode  
z High Speed Silicon Carbide Schottky  
Co-Pack Diode  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
ICM = 125  
A
(RBSOA)  
@ VCE ≤ VCES  
PC  
TC = 25°C  
170  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
- No Reverse Recovery  
z 2500V Electrical Isolation  
z Avalanche Rated  
VISOL  
50/60 Hz, RMS, t = 1minute  
IISOL < 1mA  
2500  
3000  
V~  
V~  
t = 10 s  
FC  
Mounting Force  
20..120/4.5..27  
N/lb  
Advantages  
TL  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
z High Power Density  
z Low Gate Drive Requirement  
TSOLD  
Weight  
5
g
Applications  
z High Frequency Power Inverters  
z UPS  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z Motor Drives  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE = VCES, VGE = 0V  
50  
1
μA  
mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100  
2.5  
nA  
VCE(sat)  
IC = 40A, VGE = 15V, Note 1  
2.2  
1.7  
V
V
TJ = 125°C  
DS100098B(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGR60N60C3C1  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXGR) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
23  
38  
S
Cies  
Coes  
Cres  
2810  
210  
80  
pF  
pF  
pF  
Qg  
115  
43  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
22  
td(on)  
tri  
24  
40  
ns  
ns  
Inductive Load, TJ = 25°C  
IC = 40A, VGE = 15V  
VCE = 480V, RG = 3Ω  
Note 2  
Eon  
td(off)  
tfi  
0.83  
70  
mJ  
110 ns  
ns  
50  
Eoff  
0.45  
0.80 mJ  
td(on)  
tri  
23  
39  
ns  
ns  
Inductive Load, TJ = 125°C  
IC = 40A, VGE = 15V  
VCE = 480V, RG = 3Ω  
Note 2  
Eon  
td(off)  
tfi  
0.78  
112  
86  
mJ  
ns  
ns  
Eoff  
0.80  
mJ  
RthJC  
RthCS  
0.73 °C/W  
°C/W  
0.15  
Reverse Diode (SiC)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 20A, VGE = 0V, Note 1  
1.65  
1.80  
2.10  
V
V
TJ = 125°C  
RthJC  
1.75 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGR60N60C3C1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
VGE = 15V  
13V  
13V  
11V  
11V  
9V  
9V  
7V  
5V  
7V  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
VGE = 15V  
13V  
11V  
I C = 80A  
9V  
I C = 40A  
7V  
5V  
I C = 20A  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
160  
140  
120  
100  
80  
TJ = 25ºC  
I C = 80A  
40A  
20A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
6
7
8
9
10  
VGE - Volts  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGR60N60C3C1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 40A  
I G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
40  
TJ = 125ºC  
RG = 3Ω  
C
res  
dv / dt < 10V / ns  
20  
= 1 MHz  
5
f
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGR60N60C3C1  
Fig. 12. Inductive Switching Energy Loss  
vs. Gate Resistance  
Fig. 13. Inductive Switching Energy Loss  
vs. Collector Current  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
E
E
on - - - -  
off  
off  
RG = 3  
TJ = 125ºC , VGE = 15V  
VCE = 480V  
VGE = 15V  
ꢀ
,
VCE = 480V  
I C = 80A  
TJ = 125ºC, 25ºC  
I C = 40A  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
IC - Amperes  
RG - Ohms  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Inductive Switching Energy Loss  
vs. Junction Temperature  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
170  
160  
150  
140  
130  
120  
110  
100  
90  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
E
E
on - - - -  
off  
t f  
td(off)  
- - - -  
RG = 3ꢀ VGE = 15V  
,
TJ = 125ºC, GE = 15V  
V
VCE = 480V  
VCE = 480V  
I C = 80A  
I C = 80A  
I C = 40A  
80  
I C = 40A  
115  
70  
60  
60  
25  
35  
45  
55  
65  
75  
85  
95  
105  
125  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times  
vs. Collector Current  
Fig. 17. Inductive Turn-off Switching Times  
vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
200  
160  
140  
120  
100  
80  
150  
135  
120  
105  
90  
t f  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
180  
160  
140  
120  
100  
80  
RG = 3Ω , VGE = 15V  
RG = 3ꢀ , VGE = 15V  
VCE = 480V  
VCE = 480V  
TJ = 125ºC  
I
= 80A  
C
I
= 40A  
C
60  
60  
75  
40  
TJ = 25ºC  
60  
40  
60  
20  
40  
0
20  
20  
45  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGR60N60C3C1  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times  
vs. Collector Current  
td(on)  
- - - -  
140  
120  
100  
80  
32  
30  
28  
26  
24  
22  
20  
18  
140  
120  
100  
80  
50  
45  
40  
35  
30  
25  
20  
tr  
td(on) - - - -  
tr  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
RG = 3Ω , VGE = 15V  
VCE = 480V  
TJ = 25ºC, 125ºC  
I C = 80A  
60  
I C = 40A  
60  
40  
40  
20  
0
20  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times  
vs. Junction Temperature  
Fig. 21. Forward Current vs. Forward Voltage  
50  
140  
120  
100  
80  
32  
30  
28  
26  
24  
22  
20  
tr  
t
d(on) - - - -  
45  
40  
35  
30  
25  
20  
15  
10  
5
RG = 3Ω , VGE = 15V  
VCE = 480V  
T
= 25ºC  
J
T
= 125ºC  
J
I C = 80A  
60  
I C = 40A  
40  
20  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0.0  
0.5  
1.0  
1.5  
VF - Volts  
2.0  
2.5  
3.0  
TJ - Degrees Centigrade  
Fig. 22. Maximum Transient Thermal Impedance for Diodes  
10.0  
1.0  
0.1  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_60N60C3C1(6D)01-15-10-A  
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