IXGH 16N170
IXGT 16N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs
IC = IC90; V = 10 V,
10
14
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
P
IC(ON)
VGE = 10V, VCE = 10V
60
A
Cies
Coes
Cres
1700
83
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
30
e
Qg
Qge
Qgc
69
13
24
nC
nC
nC
Dim.
Millimeter
Min.
Inches
Min. Max.
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
45
48
200
290
6
ns
ns
400 ns
500 ns
12 mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = IC90, V = 15 V
VCE = 0.8 VGECES, RG = Roff = 10 Ω
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Remarks: Switching times may
20.80 21.46
15.75 16.26
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
Eon
td(off)
tfi
48
42
1.5
200
360
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
P
3.55
5.89
3.65
.140 .144
Q
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
TO-268 Outline
Eoff
8
mJ
RthJC
0.65 K/W
RthCK
(TO-247)
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Min Recommended Footprint
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
2.1
.75
.83
C
.65
.016 .026
D
E
13.80 14.00
.543 .551
.624 .632
.524 .535
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
