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IXGT20N140C3H1

型号:

IXGT20N140C3H1

描述:

GenX3 1400V的IGBT W /二极管[ GenX3 1400V IGBTs w/ Diode ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

101 K

Advance Technical Information  
GenX3TM 1400V IGBTs  
w/ Diode  
VCES = 1400V  
IC100 = 20A  
VCE(sat) 5.0V  
tfi(typ) = 32ns  
IXGH20N140C3H1  
IXGT20N140C3H1  
High-Speed PT IGBTs  
for 20 - 50 kHz Switching  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
1400  
1400  
V
V
C
C (Tab)  
E
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
IC25  
IC100  
TC = 25°C  
TC = 100°C  
42  
20  
A
A
TO-268 (IXGT)  
ICM  
TC = 25°C, 1ms  
108  
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
20  
400  
A
mJ  
E
C
C (Tab)  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 5Ω  
Clamped Inductive Load  
ICM = 40  
A
VCE VCES  
G = Gate  
= Collector  
E = Emitter  
Tab = Collector  
PC  
TC = 25°C  
250  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
-55 ... +150  
z Optimized for Low Switching Losses  
z Square RBSOA  
z High Avalanche Capability  
z Anti-Parallel Ultra Fast Diode  
z International Standard Packages  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z High Frequency Power Inverters  
z UPS  
VCE = VCES, VGE= 0V  
100 μA  
TJ = 125°C, Note 1  
2.0 mA  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC  
= IC100, VGE = 15V, Note 1  
TJ = 125°C  
4.0  
3.5  
5.0  
V
V
DS100251(03/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGH20N140C3H1  
IXGT20N140C3H1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = IC100, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
10  
17  
S
Cies  
Coes  
Cres  
1790  
145  
50  
pF  
pF  
pF  
P  
1
2
3
Qg  
88  
18  
30  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC100, VGE = 15V, VCE = 0.5 VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
19  
12  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
IC = IC100, VGE = 15V  
1.35  
110  
32  
Dim.  
Millimeter  
Inches  
Min. Max.  
VCE = 0.5 VCES, RG = 5Ω  
Min. Max.  
Note 2  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eoff  
0.44  
0.80 mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
22  
13  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 125°C  
IC = IC100, VGE = 15V  
2.33  
144  
380  
1.64  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
VCE = 0.5 VCES, RG = 5Ω  
20.80 21.46  
15.75 16.26  
ns  
Note 2  
e
5.20  
5.72 0.205 0.225  
Eoff  
mJ  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
RthJC  
RthCK  
0.50 °C/W  
°C/W  
P 3.55  
3.65  
.140 .144  
TO-247  
0.21  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 Outline  
Reverse Diode (FRED)  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 20A, VGE = 0V, Note 1  
3.0  
V
V
TJ = 125°C  
2.8  
19  
IRM  
A
IF = 20A, VGE = 0V,  
-diF/dt = 750A/μs, VR = 800V  
trr  
70  
ns  
0.9 °C/W  
Terminals: 1 - Gate  
3 - Emitter  
2 & 4 - Collector  
RthJC  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
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