IXGH 22N170
IXGT 22N170
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
20
S
A
∅ P
IC(ON)
VGE = 10V, VCE = 10V
100
Cies
Coes
Cres
1900
96
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
26
e
Qg
85
13
26
nC
nC
nC
Dim.
Millimeter
Min.
Inches
Min. Max.
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
42
39
ns
ns
ns
ns
mJ
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
IC = IC25, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 5 Ω
TBD
TBD
TBD
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
20.80 21.46
15.75 16.26
,
Eoff
e
L
L1
5.20
5.72 0.205 0.225
19.81 20.32
4.50
.780 .800
.177
td(on)
tri
50
55
ns
ns
mJ
ns
ns
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Eon
td(off)
tfi
2.0
VCE = 0.8 VCES, RG = Roff = 5 Ω
TBD
TBD
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
TO-268 Outline
Eoff
TBD
mJ
RthJC
0.6 K/W
RthCK
(TO-247)
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
Min Recommended Footprint
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
13.6
e
H
L
5.45 BSC
18.70 19.10
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
1.20
1.40
.047 .055
L2
L3
L4
1.00
0.25 BSC
3.80 4.10
1.15
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
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