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IXGT30N60C2D1

型号：

IXGT30N60C2D1

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

163 K

下载PDF手册
HiPerFASTTM IGBT  
IXGH 30N60C2D1  
IXGT 30N60C2D1  
VCES  
IC25  
= 600 V  
= 70 A  
with Diode  
VCE(sat) = 2.7 V  
C2-Class High Speed IGBTs  
tfityp  
= 32 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247AD(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
70  
30  
A
A
A
TO-268 (IXGT)  
TC = 25°C, 1 ms  
150  
SSOA  
(RBSOA)  
PC  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600 V  
TC = 25°C  
ICM = 60  
A
G
E
190  
W
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10s  
300  
250  
°C  
°C  
z
Very high frequency IGBT  
Square RBSOA  
High current handling capability  
MOS Gate turn-on  
z
z
z
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
- drive simplicity  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
z
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
3
µA  
mA  
z
z
IGES  
VCE = 0 V, VGE = 20 V  
IC = 24 A, VGE = 15 V  
100  
2.7  
nA  
Advantages  
VCE(sat)  
TJ = 25°C  
TJ = 125°C  
V
V
z
High power density  
1.8  
z
Very fast switching speed for high  
frequency aaplications  
High power surface mountable  
z
package  
© 2005 IXYS All rights reserved  
DS99169A(01/05)  
IXGH 30N60C2D1  
IXGT 30N60C2D1  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = 24 A; VCE = 10 V,  
18  
28  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
1430  
140  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = 24 A, VGE = 15 V, VCE = 300 V  
Inductive load, TJ = 25°C  
Qg  
70  
10  
23  
nC  
nC  
nC  
e
Qge  
Qgc  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
13  
15  
70  
60  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = 24 A, VGE = 15 V  
VCE = 400 V, RG = 5 Ω  
140 ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
0.19 0.30 mJ  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
13  
17  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = 24 A, VGE = 15 V  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
0.22  
120  
130  
0.59  
mJ  
ns  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VCE = 400 V, RG = 5 Ω  
ns  
TO-268 Outline  
Eoff  
mJ  
RthJC  
RthCK  
0.65 K/W  
K/W  
(TO-247)  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 30 A, VGE = 0 V, Pulse test  
TJ =150°C  
1.6  
2.5  
V
V
t ≤ 300 µs, duty cycle d ≤ 2 %  
IRM  
trr  
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C  
4
A
ns  
ns  
VR = 100 V  
TJ = 100°C 100  
25  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
RthJC  
0.9 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGH 30N60C2D1  
IXGT 30N60C2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
270  
240  
210  
180  
150  
120  
90  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
9V  
11V  
9V  
7V  
7V  
5V  
60  
30  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
25  
3
2
4
6
8 10  
VC E - Volts  
12  
14 16  
18  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE( ) on  
sat  
Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGE = 15V  
VGE = 15V  
9V  
7V  
13V  
11V  
IC = 48A  
IC = 24A  
5V  
IC = 12A  
0
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
VCE - Volts  
2.5  
3
3.5  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
4.5  
4
TJ = 25ºC  
IC = 48A  
24A  
12A  
3.5  
3
60  
TJ = 25ºC  
125ºC  
2.5  
2
40  
20  
0
5
6
7
8
9
10 11 12 13 14 15 16 17  
4
5
6
7
8
9
10  
11  
12  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGH 30N60C2D1  
IXGT 30N60C2D1  
Fig. 8. Dependence of Turn-Off  
Ene r gy on RG  
Fig. 7. Transconductance  
35  
30  
25  
20  
15  
10  
5
2000  
1800  
1600  
1400  
1200  
1000  
800  
TJ = 125ºC  
GE = 15V  
VCE = 400V  
V
IC = 48A  
TJ = 25ºC  
125ºC  
IC = 24A  
600  
400  
200  
IC = 12A  
0
0
0
20 40 60 80 100 120 140 160 180 200  
5
10  
15 20  
25  
30  
35 40  
45  
50  
I C - Amperes  
R G - Ohms  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
Fig. 9. Dependence of Turn-Off  
Ene r gy on IC  
1400  
1200  
1000  
800  
600  
400  
200  
0
1400  
1200  
1000  
800  
600  
400  
200  
0
RG = 5Ω  
VGE = 15V  
VCE = 400V  
RG = 5Ω  
VGE = 15V  
VCE = 400V  
IC = 48A  
TJ = 125ºC  
IC = 24A  
TJ = 25ºC  
IC = 12A  
10  
15  
20  
25  
30  
I C - Amperes  
35  
40  
45  
50  
25 35 45 55 65 75 85 95 105 115 125  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-Off  
Switching Time on RG  
Fig. 12. Dependence of Turn-Off  
Switching Time on IC  
450  
400  
350  
300  
250  
200  
150  
100  
200  
180  
160  
140  
120  
100  
80  
td(off)  
tfi - - - - - -  
RG = 5Ω  
td(off)  
tfi  
TJ = 125ºC  
VGE = 15V  
VCE = 400V  
-
- - - - -  
VGE = 15V  
VCE = 400V  
TJ = 125ºC  
IC = 12A  
IC = 24A  
IC = 48A  
60  
TJ = 25ºC  
40  
5
10  
15  
20 25 30  
R G - Ohms  
35  
40  
45  
50  
10  
15  
20  
25  
30  
I C - Amperes  
35  
40  
45  
50  
IXGH 30N60C2D1  
IXGT 30N60C2D1  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
15  
12  
9
180  
160  
140  
120  
100  
80  
VCE = 300V  
IC = 24A  
G = 10mA  
td(off)  
tfi - - - - - -  
IC = 48A  
RG = 5Ω  
24A  
I
VGE = 15V  
12A  
VCE = 400V  
6
IC = 12A  
3
24A  
48A  
60  
40  
0
25 35 45 55 65 75 85 95 105 115 125  
0
10  
20  
30  
40  
50  
60  
70  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
1.0  
0.5  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2005 IXYS All rights reserved  
IXGH 30N60C2D1  
IXGT 30N60C2D1  
60  
A
1000  
nC  
30  
A
TVJ= 100°C  
TVJ= 100°C  
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IRM  
IF= 60A  
IF= 30A  
Qr  
IF  
20  
15  
10  
5
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/µs  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 17. Forward current IF versus VF  
Fig. 18. Reverse recovery charge  
Fig. 19. Peak reverse current IRM  
2.0  
90  
20  
V
1.00  
µs  
TVJ= 100°C  
TVJ= 100°C  
ns  
80  
VFR  
tfr  
VFR  
trr  
1.5  
Kf  
15  
0.75  
0.50  
0.25  
0.
tfr  
IF= 60A  
IF= 30A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 20. Dynamic parameters Q , I  
Fig. 20. Dynamic parameters Q ,RIM  
Fig. 21. Recovery time trr versus  
Fig. 22. Peak forward voltage VFR  
r
r
RM  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
0.502  
0.193  
0.0052  
0.0003  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 23. Transient thermal resistance junction to case  
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