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IXGT32N60CD1

型号：

IXGT32N60CD1

描述：

HiPerFAST IGBT与二极管[ HiPerFAST IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

164 K

下载PDF手册
HiPerFASTTM IGBT  
with Diode  
IXGH 32N60CD1  
IXGT 32N60CD1  
VCES  
IC25  
= 600 V  
= 60 A  
VCE(SAT)typ = 2.1 V  
tfi(typ)  
= 55 ns  
Light Speed Series  
TO-247AD(IXGH)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C (TAB)  
E
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
60  
32  
120  
A
A
A
TO-268 (D3) ( IXGT)  
SSOA  
V
= 15 V, T = 125°C, RG = 10 Ω  
ICM = 64  
A
(RBSOA)  
CGlaE mped indVuJctive load @ 0.8 VCES  
G
C (TAB)  
PC  
TC = 25°C  
200  
W
E
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
C = Collector  
E = Emitter  
Maximum Lead and Tab temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
Md  
Mounting torque, TO-247 AD  
1.13/10 Nm/lb.in.  
z
International standard TO-247AD  
Weight  
TO-247 AD  
TO-268  
6
5
g
g
package  
z
High current handling capability  
z
Latest generation HDMOSTM process  
MOS Gate turn-on  
z
- drive simplicity  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
Uninterruptible power supplies (UPS)  
z
Switched-mode and resonant-mode  
power supplies  
z
AC motor speed control  
BVCES  
VGE(th)  
IC = 250µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
z
DC servo and robot drives  
5.0  
z
DC choppers  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
200  
3
µA  
TJJ = 125°C  
mA  
Advantages  
z
High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
z
Very fast switching speeds for high  
frequency applications  
VCE(sat)  
IC = IC90, VGE = 15 V  
2.1  
2.5  
z
High power surface mountable package  
97544E (6/02)  
© 2002 IXYS All rights reserved  
IXGH 32N60CD1  
IXGT 32N60CD1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC90; VCE = 10 V,  
25  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
P
Cies  
Coes  
Cres  
2700  
240  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Qg  
Qge  
Qgc  
110  
22  
40  
nC  
nC  
nC  
e
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
25  
20  
85  
55  
0.32  
ns  
ns  
ns  
ns  
mJ  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
Eoff  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
Eon  
td(off)  
tfi  
25  
25  
1
110  
100  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
VCE = 0.8 VCES, RG = Roff = 4.7 Ω  
P
3.55  
5.89  
3.65  
.140 .144  
170 ns  
160 ns  
Q
6.40 0.232 0.252  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
,
Eoff  
0.85 1.25 mJ  
RthJC  
RthCK  
0.62 K/W  
TO-268 Outline  
0.25  
K/W  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
I
= I , V = 0 V, Pulse test  
T =150°C  
TJJ = 25°C  
1.6  
2.5  
V
V
tF≤ 30C090µs,GdEuty cycle d ≤ 2 %  
IRM  
trr  
IF = IC90, V = 0 V, -diF/dt = 100 A/µs  
IFR = 1 A; -di/dt = 100 A/µs; VR = 30 V TJJ = 25°C  
6
A
ns  
ns  
V = 100 VGE  
T = 100°C 100  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
25  
RthJC  
0.9 K/W  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH 32N60CD1  
IXGT 32N60CD1  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
TJ = 25°C  
VGE = 15V  
13V  
TJ = 25°C  
9V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
5V  
7V  
5V  
40  
0
0
2
4
6
8
10  
0
1
2
3
4
5
VCE - Volts  
VCE - Volts  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
100  
80  
60  
40  
20  
0
1.50  
1.25  
1.00  
0.75  
0.50  
11V  
TJ = 125°C  
VGE = 15V  
13V  
VGE = 15V  
9V  
I
C = 64A  
I
C = 32A  
7V  
5V  
IC = 16A  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Fig. 4. Temperature Dependence of VCE(sat)  
Fig. 3. High Temperature Output Characteristics  
100  
80  
60  
40  
20  
0
10000  
1000  
100  
V
CE = 10V  
f = 1Mhz  
C
iss  
C
oss  
C
rss  
TJ =125°C  
TJ = 25°C  
10  
3
4
5
6
7
8
9
10  
0
5
10 15 20 25 30 35 40  
VCE-Volts  
VGE - Volts  
Fig. 5. Admittance Curves  
Fig. 6. CapacitanceCurves  
© 2002 IXYS All rights reserved  
IXGH 32N60CD1  
IXGT 32N60CD1  
4
3
2
1
0
8
1.00  
0.75  
0.50  
0.25  
0.00  
4
3
2
1
0
TJ = 125°C  
TJ = 125°C  
E(OFF)  
RG = 10Ω  
IC = 64A  
6
E(ON)  
E(OFF)  
E(ON)  
4
E(ON)  
E(OFF)  
IC = 32A  
IC = 16A  
2
E(ON)  
E(OFF)  
0
60  
0
10  
20  
30  
40  
50  
0
20  
40  
60  
80  
RG - Ohms  
IC - Amperes  
Fig. 7. Dependence of EON and EOFF on IC.  
Fig. 8. Dependence of EON and EOFF on RG.  
16  
100  
64  
IC = 32A  
VCE = 300V  
12  
8
TJ = 125°C  
10  
1
RG = 4.7Ω  
dV/dt < 5V/ns  
4
0
0.1  
0
25  
50  
75  
100  
125  
0
100  
200  
300  
400  
500  
600  
Qg - nanocoulombs  
Fig. 9. Gate Charge  
VCE - Volts  
Fig.10.Turn-offSafeOperatingArea  
1
D=0.5  
D=0.2  
0.1  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Fig. 11. TransientThermalResistance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGH 32N60CD1  
IXGT 32N60CD1  
60  
A
1000  
nC  
30  
A
TVJ=100°C  
VR = 300V  
TVJ=100°C  
VR = 300V  
50  
40  
30  
20  
10  
0
25  
IF= 60A  
IF= 30A  
IF= 15A  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/µs  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/µs  
-diF/dt  
Fig. 12 Forward current IF versus VF  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
2.0  
90  
20  
V
1.00  
TVJ=100°C  
IF = 30A  
TVJ=100°C  
VR = 300V  
µs  
ns  
VFR  
VFR  
tfr  
trr  
1.5  
Kf  
15  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
°C  
A/µs  
diF/dt  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and  
tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2002 IXYS All rights reserved  
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