请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGT40N120A2

型号：

IXGT40N120A2

描述：

高电压IGBT低V[ High Voltage IGBT Low V ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

172 K

下载PDF手册
IXGH 40N120A2  
IXGT 40N120A2  
IXGH 40N120A2  
IXGT 40N120A2  
VCES = 1200 V  
IC25 = 75 A  
VCE(sat) ≤ 2.0 V  
High Voltage IGBT  
Low VCE(sat)  
Preliminary Data Sheet  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXFH)  
VCES  
VCES  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C, IGBT chip capability  
TC = 110°C  
75  
A
A
A
(TAB)  
40  
TJ ≤ 150°C, tp < 300 μs  
160  
SSOA  
VGE = 15 V, TVJ = 150°C, RG = 5 Ω  
ICM = 80  
A
TO-268 (IXGT)  
(RBSOA) Clamped inductive load, VCE < 960 V  
PC  
TC = 25°C  
360  
W
G
E
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
C (TAB)  
G = Gate  
E = Emitter  
C = Collector  
TAb = Collector  
TL  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 seconds  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
TSOLD  
Md  
• International standard packages  
• Low VCE(sat)  
Mounting torque (ixgh)  
1.3/10 Nm/lb.in.  
- for minimum on-state conduction  
Weight  
(IXGH)  
(IXGT)  
6.0  
4.0  
g
g
losses  
• MOS Gate turn-on  
- drive simplicity  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
VGE(th)  
VGE(th)  
IC = 1 mA, VGE = 0 V  
1200  
3.0  
V
IC = 250 μA, VCE = VGE  
5.0 V  
• Uninterruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
power supplies  
ICES  
VCE = VCES  
VGE = 0 V  
50 μA  
TJ = 125°C  
1mA  
• Capacitor discharge  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = IC110, VGE = 15V  
± 100 nA  
2.0 V  
VCE(sat)  
DS99509 (12/05)  
© 2005 IXYS All rights reserved  
IXGH 40N120A2  
IXGT 40N120A2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
gfs  
IC = IC110, VCE = 10 V  
28  
40  
S
A
IC(ON)  
VGE = 10 V, VCE = 10 V  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
195  
1
2
3
Cies  
Coes  
Cres  
3150  
165  
70  
pF  
pF  
pF  
Qg  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
136  
19  
nC  
nC  
nC  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qge  
Qgc  
54  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
td(on)  
tri  
td(off)  
tfi  
22  
41  
ns  
ns  
ns  
ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Inductive load, TJ = 25°C  
IC = IC110, VGE = 15 V  
VCE = 0.8 VCES, RG = 2 Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
420  
800  
800 1200  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
15  
25 mJ  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
19  
36  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC110, VGE = 15 V  
VCE = 0.8 VCES, RG = 2 Ω  
.780 .800  
.177  
∅P 3.55  
Q
3.65  
.140 .144  
Eon  
td(off)  
3.5  
730  
mJ  
ns  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
tfi  
1570  
35  
ns  
TO-268 Outline (IXGT)  
Eoff  
mJ  
RthJC  
RthCS  
0.35 K/W  
K/W  
(TO-247)  
0.25  
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
TO-268: Min. Recommended Footprint  
PRELIMINARY TECHNICAL  
INFORMATION  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
The product presented herein is under  
development. The Technical Specifications  
offered are derived from data gathered  
during objective characterizations of  
preliminary engineering lots; but also may  
yet contain some information supplied during  
a subjective pre-production design evalua-  
tion. IXYS reserves the right to change  
limits, test conditions, and dimensions  
without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
6,259,123 B1  
6,306,728 B1  
IXGH 40N120A2  
IXGT 40N120A2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Exteded Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
270  
240  
210  
180  
150  
120  
90  
V
GE  
= 15V  
13V  
V
= 15V  
GE  
13V  
11V  
11V  
9V  
9V  
7V  
60  
7V  
30  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
I
= 80A  
C
9V  
7V  
I
I
= 40A  
= 20A  
C
C
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
0.5  
1
1.5  
2
2.5  
3
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
200  
180  
160  
140  
120  
100  
80  
T
J
= 25ºC  
T
J
= - 40ºC  
25ºC  
125ºC  
I
= 80A  
C
40A  
20A  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.5  
5.5  
6.5  
7.5  
8.5  
9.5  
10.5  
VGE - Volts  
VGE - Volts  
© 2005 IXYS All rights reserved  
IXGH 40N120A2  
IXGT 40N120A2  
Fig. 8. Inductive Turn-off Switching Times vs.  
Fig. 7. Transconductance  
Gate Resistance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2000  
1900  
1800  
1700  
1600  
1500  
1400  
1300  
1100  
1000  
900  
800  
700  
600  
500  
400  
t f  
td(off) - - - -  
I
= 20A, 80A  
C
T = 125ºC, V = 15V  
J GE  
V
= 960V  
CE  
T
J
= - 40ºC  
I
= 40A  
C
25ºC  
125ºC  
I
= 20A, 80A  
C
0
0
30  
60  
90  
120  
150  
180  
210  
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 9. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 10. Inductive Turn-off Switching Times vs.  
Junction Temperature  
2000  
1800  
1600  
1400  
1200  
1000  
800  
1000  
2000  
1800  
1600  
1400  
1200  
1000  
800  
1000  
900  
800  
700  
600  
500  
400  
300  
t f  
R
td(off) - - - -  
900  
800  
700  
600  
500  
400  
300  
= 2 , V = 15V  
Ω
GE  
G
T = 125ºC  
J
V
= 960V  
CE  
t f  
R
td(off) - - - -  
= 2 , V = 15V  
Ω
G
GE  
I
= 20A, 40A, 80A  
C
V
= 960V  
CE  
I
= 80A, 20A  
C
T = 25ºC  
J
600  
600  
20  
30  
40  
50  
60  
70  
80  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 12. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 11. Inductive Turn-on Switching Times vs.  
Gate Resistance  
150  
135  
120  
105  
90  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
t r  
td(on) - - - -  
t r  
R
td(on)  
- - - -  
T = 125ºC, V = 15V  
J GE  
= 2  
Ω
, V = 15V  
GE  
G
V
= 960V  
CE  
V
= 960V  
CE  
I
= 80A  
C
T = 25ºC  
J
75  
I
= 40A  
C
60  
45  
30  
I
= 20A  
C
8
15  
T = 125ºC  
J
0
2
3
4
5
6
7
9
10  
20  
30  
40  
50  
60  
70  
80  
RG - Ohms  
IC - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXGH 40N120A2  
IXGT 40N120A2  
Fig. 13. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 14. Gate Charge  
16  
14  
12  
10  
8
110  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
= 600V  
CE  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
I
I
= 40A  
C
G
I
= 80A  
C
= 10 mA  
t r  
R
td(on) - - - -  
= 2  
Ω
, V = 15V  
GE  
G
V
= 960V  
CE  
I
= 40A  
C
6
4
2
I
= 20A  
C
0
0
20  
40  
60  
80  
100  
120  
140  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
QG - NanoCoulombs  
Fig. 15. Capacitance  
Fig. 16. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
C
C
oes  
TJ = 125ºC  
RG = 5  
Ω
dV / dT < 10V / ns  
res  
30  
10  
200 300 400 500 600 700 800 900 1000 1100 1200  
VCE - Volts  
0
5
10  
15  
20  
25  
35  
40  
VCE - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2005 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

 		IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

 		IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

 		IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

 		IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.231671s