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IXGT50N90B2

型号：

IXGT50N90B2

描述：

HiPerFAST IGBT B2级高速的IGBT[ HiPerFAST IGBT B2-Class High Speed IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

161 K

下载PDF手册
Advance Technical Information  
HiPerFASTTM IGBT  
VCES  
IC25  
= 900 V  
= 75 A  
IXGH 50N90B2  
IXGT 50N90B2  
B2-Class High Speed IGBTs  
VCE(sat) = 2.7 V  
tfityp = 200 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247  
(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
TO-268  
(IXGT)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
TC = 25°C, 1 ms  
200  
G
C (TAB)  
E
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600V  
ICM = 100  
A
(RBSOA)  
PC  
TC = 25°C  
400  
W
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
z
z
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
z
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
50  
1
µA  
mA  
Advantages  
z
High power density  
Very fast switching speeds for high  
frequency applications  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC110, VGE = 15 V  
100  
2.7  
nA  
z
VCE(sat)  
2.2  
V
V
TJ = 125°C  
© 2004 IXYS All rights reserved  
DS99377(04/05)  
IXGH 50N90B2  
IXGT 50N90B2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC110 A; V = 10 V,  
25  
40  
S
Pulse test, t ≤C3E00 µs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
2500  
180  
75  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
135  
23  
nC  
nC  
nC  
e
Qge  
Qgc  
IC = IC110 A, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
50  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
20  
28  
ns  
ns  
Inductive load, TJ = 25°C  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC110 A, VGE = 15 V  
VCE = 720 V, RG = Roff = 5 Ω  
350  
200  
4.7  
500 ns  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
7.5 mJ  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
20  
28  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = IC110 A, VGE = 15 V  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
0.7  
400  
420  
8.7  
mJ  
ns  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
VCE = 720 V, RG = Roff = 5 Ω  
ns  
Eoff  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.31 K/W  
K/W  
(TO-247)  
0.25  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGH 50N90B2  
IXGT 50N90B2  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25 ºC  
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GE  
=15V  
13V  
V
GE  
= 15V  
13 V  
11V  
9V  
11V  
7V  
9V  
7V  
5V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
3
6
9
12  
15  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
V
GE  
= 15V  
13V  
V
GE  
= 15V  
I
= 100A  
C
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
11V  
9V  
7V  
I
= 50A  
C
I
= 25A  
C
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
250  
T = -40ºC  
225  
200  
175  
150  
125  
100  
75  
J
= 25ºC  
T
J
25ºC  
125ºC  
I
= 100A  
50A  
C
25A  
50  
25  
0
3
4
5
6
7
8
9
10  
11  
12  
5
6
7
8
9
10 11 12 13 14 15  
VG E - Volts  
VG E - Volts  
© 2004 IXYS All rights reserved  
IXGH 50N90B2  
IXGT 50N90B2  
Fig. 8. Dependence of Turn-off  
Fig. 7. Transconductance  
Energy Loss on RG  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
T = 125ºC  
I
= 100A  
C
J
V
GE  
= 15V  
V
CE  
= 720V  
T = -40ºC  
J
25ºC  
125ºC  
I
= 50A  
C
I
= 25A  
C
0
0
0
20  
5
25  
50  
75 100 125 150 175 200 225  
0
30  
60  
90  
120  
150  
R
- Ohms  
G
I C - Amperes  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
I
= 100A  
C
R
= 5Ω  
G
T = 125ºC  
J
V
V
= 15V  
GE  
CE  
= 720V  
R
V
= 5Ω  
G
= 15V  
GE  
CE  
I
= 50A  
C
V
= 720V  
T = 25ºC  
J
6
6
4
4
2
2
I
= 25A  
C
0
0
25 35 45 55 65 75 85 95 105 115 125  
30  
40  
50  
60  
70  
80  
90  
100  
T - Degrees Centigrade  
J
I C - Amperes  
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
1300  
1200  
1100  
1000  
900  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
td(off)  
tfi  
- - - - -  
I
= 25A  
50A  
C
tfi  
- - - - - -  
R
V
= 5Ω, V  
= 15V  
G
GE  
T = 125ºC  
J
= 720V  
CE  
100A  
V
V
= 15V  
GE  
CE  
= 720V  
T = 125ºC  
800  
J
700  
I
= 100A  
50A  
C
600  
T = 25ºC  
J
500  
25A  
400  
300  
200  
10  
15  
20  
25  
30  
35  
40  
45  
50  
20  
30  
40  
50  
60  
70  
80  
90  
100  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,850,072  
4,835,592  
4,931,844  
4,881,106  
5,034,796  
5,017,508  
5,063,307  
5,049,961  
5,237,481  
5,187,117  
5,381,025  
5,486,715  
6,404,065B1 6,162,665  
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344  
6,534,343  
6,583,505  
IXGH 50N90B2  
IXGT 50N90B2  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
15  
13.5  
12  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
V
I
= 450V  
CE  
tfi  
R
V
V
- - - - - -  
I
= 25A  
50A  
C
= 50A  
C
Ω
=
5
G
I
= 10mA  
G
10.5  
9
100A  
=
=
15 V  
GE  
CE  
720V  
7.5  
6
4.5  
3
I
= 100A  
50A  
C
1.5  
0
25A  
25 35 45 55 65 75 85 95 105 115 125  
0
20  
40  
60  
80  
100  
120  
140  
T - Degrees Centigrade  
J
Q G - nanoCoulombs  
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
1000  
100  
10  
C
oes  
T = 125ºC  
J
C
R
= 10Ω  
G
res  
dV/dT < 10V/ns  
0
5
10  
15  
20  
25  
30  
35  
40  
100 200 300 400 500 600 700 800 900  
VC E - Volts  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2004 IXYS All rights reserved  
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