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IXGT64N60B3

型号：

IXGT64N60B3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

164 K

下载PDF手册
Preliminary Technical Information  
GenX3TM 600V IGBT  
IXGH64N60B3  
IXGT64N60B3  
VCES = 600V  
IC110 = 64A  
VCE(sat) ≤ 1.8V  
tfi(typ) = 88ns  
Medium speed low Vsat PT  
IGBTs for 5 - 40kHz switching  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C (TAB)  
C
E
IC110  
ICM  
TC = 110°C  
64  
A
A
TC = 25°C, 1ms  
400  
TO-268 (IXGT)  
G
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
ICM = 200  
A
(RBSOA) Clamped inductive load @ ≤ 600V  
PC  
TC = 25°C  
460  
W
E
C
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
C (TAB)  
TJM  
Tstg  
-55 ... +150  
G = Gate  
= Collector  
E = Emitter TAB = Collector  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Optimized for low conduction and  
switching losses  
Weight  
TO-247  
TO-268  
6
5
g
g
z Square RBSOA  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
Applications  
z Power Inverters  
z UPS  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
V
V
3.0  
5.0  
z Motor Drives  
z SMPS  
ICES  
VCE = VCES  
VGE = 0V  
50 μA  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
TJ = 125°C  
500 μA  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
1.59 1.80  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99971(04/08)  
IXGH64N60B3  
IXGT64N60B3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
gfS  
IC = 50A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
38  
64  
S
Cies  
Coes  
Cres  
4750  
260  
65  
pF  
pF  
pF  
∅ P  
1
2
3
Qg  
168  
28  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
e
61  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
td(on)  
tri  
25  
41  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eon  
td(off)  
tfi  
1.5  
138  
88  
mJ  
ns  
VCE = 480V, RG = 3Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
150  
1.9  
ns  
Eoff  
1.0  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
24  
40  
ns  
ns  
e
L
L1  
5.20  
5.72 0.205 0.225  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
19.81 20.32  
4.50  
.780 .800  
.177  
Eon  
td(off)  
tfi  
2.70  
195  
131  
1.95  
mJ  
ns  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
VCE = 480V, RG = 3Ω  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
ns  
6.15 BSC  
Eoff  
mJ  
TO-268 (IXGT) Outline  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
0.15  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXGH64N60B3  
IXGT64N60B3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
VGE = 15V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
7V  
5V  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
0
1
2
3
4
5
6
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.25  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
0.75  
VGE = 15V  
11V  
VGE = 15V  
I C = 100A  
9V  
7V  
I C = 50A  
I C = 25A  
5V  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2  
VCE - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
I C = 100A  
50A  
25A  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH64N60B3  
IXGT64N60B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 50A  
I
G = 10 mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Capacitance  
Fig. 9. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
220  
200  
180  
160  
140  
120  
100  
80  
C
ies  
C
oes  
60  
TJ = 125ºC  
C
40  
res  
RG = 3  
Ω
dV / dt < 10V / ns  
= 1 MHz  
5
f
20  
0
10  
100  
200  
300  
400  
500  
600  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_64N60B3(75) 4-09-08-A  
IXGH64N60B3  
IXGT64N60B3  
Fig. 13. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
6
5
7
6
5
4
3
2
1
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-0.5  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
E
E
on - - - -  
I C = 84A  
off  
RG = 3  
I C = 84A  
VGE = 15V  
Ω
,
VCE = 480V  
4
E
Eon - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
3
V
I C = 42A  
I C = 42A  
2
1
0
I C = 21A  
I C = 21A  
-1  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
0
5
10  
15  
20  
25  
30  
35  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 15. Inductive Turn-off Switching Times  
vs. Gate Resistance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
-0.5  
5.5  
180  
900  
800  
700  
600  
500  
400  
300  
200  
100  
E
E
on - - - -  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
off  
RG = 3  
TJ = 125ºC  
170  
160  
150  
140  
130  
120  
110  
100  
VGE = 15V  
,
Ω
tf  
t
d(off) - - - -  
VCE = 480V  
TJ = 125ºC, VGE = 15V  
I C = 21A, 42A, 84A  
VCE = 480V  
I C = 42A  
TJ = 25ºC  
I C = 21A  
30 35  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
0
5
10  
15  
20  
25  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times  
vs. Collector Current  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
205  
190  
175  
160  
145  
130  
115  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
tf  
t
d(off) - - - -  
TJ = 125ºC  
RG = 3 , VGE = 15V  
Ω
VCE = 480V  
t f  
t
d(off) - - - -  
RG = 3 , VGE = 15V  
Ω
VCE = 480V  
I C = 42A, 84A  
TJ = 25ºC  
80  
80  
70  
I C = 21A  
45 55  
60  
70  
25  
35  
65  
75  
85  
95 105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH64N60B3  
IXGT64N60B3  
Fig. 18. Inductive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 19. Inductive Turn-on Switching Times  
vs. Junction Temperature  
130  
120  
110  
100  
90  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
t r  
t
d(on) - - - -  
I C = 84A  
I C = 84A  
TJ = 125ºC, VGE = 15V  
VCE = 480V  
tr  
RG = 3  
t
d(on) - - - -  
VGE = 15V  
Ω
VCE = 480V  
80  
70  
I C = 42A  
60  
I C = 42A  
50  
40  
30  
20  
I C = 21A  
95 105 115 125  
I C = 21A  
10  
10  
0
5
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 20. Inductive Turn-on Switching Times  
vs. Collector Current  
75  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
tr  
RG = 3  
td(on  
- - - -  
)
VGE = 15V  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
,
Ω
VCE = 480V  
25ºC < TJ < 125ºC  
20 25 30 35 40 45 50 55 60 65 70 75 80 85  
IC - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_64N60B3(75) 4-09-08-A  
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