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IXGT72N60A3

型号：

IXGT72N60A3

描述：

GenX3 600V IGBT[ GenX3 600V IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

199 K

下载PDF手册
GenX3TM 600V IGBT  
IXGH72N60A3  
IXGT72N60A3  
VCES = 600V  
IC110 = 72A  
Ultra Low Vsat PT IGBT for  
up to 5kHz switching  
VCE(sat) ≤ 1.35V  
tfi(typ) = 250ns  
TO-247 (IXGH)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
C (TAB)  
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
72  
A
A
A
TO-268 (IXGT)  
TC = 25°C, 1ms  
400  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped inductive load @ ≤ 600V  
ICM = 150  
A
(RBSOA)  
G
PC  
TC = 25°C  
540  
W
E
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting torque (TO-247)  
1.13/10  
Nm/lb.in.  
z Optimized for low conduction losses  
z Square RBSOA  
z International standard packages  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z High power density  
z Low gate drive requirement  
Applications  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
z Power Inverters  
z UPS  
z Motor Drives  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
V
V
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
3.0  
5.0  
ICES  
VCE = VCES  
VGE = 0V  
75 μA  
750 μA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 60A, VGE = 15V, Note 1  
1.35  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99759B(07/08)  
IXGH72N60A3  
IXGT72N60A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
48  
76  
S
Cies  
Coes  
Cres  
6600  
360  
80  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
1
2
3
Qg  
230  
40  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
78  
Terminals: 1 - Gate  
2 - Drain  
td(on)  
tri  
31  
34  
ns  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Inductive load, TJ = 25°C  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eon  
td(off)  
tfi  
1.38  
320  
250  
3.5  
mJ  
ns  
IC = 50A, VGE = 15V  
VCE = 480V, RG = 3Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ns  
Eoff  
mJ  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
td(on)  
tri  
29  
32  
ns  
ns  
Inductive load, TJ = 125°C  
IC = 50A, VGE = 15V  
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
Eon  
td(off)  
tfi  
2.6  
510  
375  
6.5  
mJ  
ns  
∅P 3.55  
Q
3.65  
.140 .144  
VCE = 480V, RG = 3Ω  
5.89  
6.40 0.232 0.252  
ns  
R
4.32  
5.49 .170 .216  
Eoff  
mJ  
RthJC  
RthCS  
0.23 °C/W  
°C/W  
TO-268 Outline  
0.15  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH72N60A3  
IXGT72N60A3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
120  
100  
80  
60  
40  
20  
0
330  
300  
270  
240  
210  
180  
150  
120  
90  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
7V  
9V  
7V  
60  
30  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1.8  
15  
0
1
2
3
4
5
6
7
8
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
I C = 120A  
I C = 60A  
7V  
5V  
I C = 30A  
100  
-50  
-25  
0
25  
50  
75  
125  
150  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
TJ = 25ºC  
I C = 120A  
60A  
30A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
40  
20  
0
5
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH72N60A3  
IXGT72N60A3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
130  
120  
110  
100  
90  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 60A  
I
G = 10 mA  
25ºC  
80  
125ºC  
70  
60  
50  
6
40  
4
30  
20  
2
10  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200 220 240  
QG - NanoCoulombs  
IC - Amperes  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
160  
140  
120  
100  
80  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
C
oes  
60  
TJ = 125ºC  
40  
RG = 3Ω  
dV / dt < 10V / ns  
20  
res  
0
10  
100 150 200 250 300 350 400 450 500 550 600 650  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_72N60A3 (76)3-25-08-B  
IXGH72N60A3  
IXGT72N60A3  
Fig. 12. Inductive Switching  
Fig. 13. Inductive Switching  
Energy Loss vs. Gate Resistance  
Energy Loss vs. Collector Current  
18  
16  
14  
12  
10  
8
6.75  
6.00  
5.25  
4.50  
3.75  
3.00  
2.25  
1.50  
0.75  
0.00  
18  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
E
E
on - - - -  
off  
RG = 3ꢀ VGE = 15V  
,
I C = 100A  
VCE = 480V  
TJ = 125ºC  
E
E
on - - - -  
off  
TJ = 125ºC , VGE = 15V  
CE = 480V  
V
I C = 50A  
TJ = 25ºC  
6
6
4
4
2
2
I C = 25A  
15  
0
0
0
5
10  
20  
25  
30  
35  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
390  
387  
384  
381  
378  
375  
372  
369  
366  
363  
360  
1400  
18  
16  
14  
12  
10  
8
7
6
5
5
4
3
2
2
1
0
tf  
td(off) - - - -  
E
E
on - - - -  
off  
1300  
1200  
1100  
1000  
900  
TJ = 125ºC, VGE = 15V  
CE = 480V  
RG = 3ꢀ VGE = 15V  
,
V
VCE = 480V  
I C = 100A  
I C = 100A  
I C = 50A  
I C = 50A  
800  
6
700  
4
600  
I C = 25A  
500  
2
I C = 25A  
400  
0
0
5
10  
15  
20  
25  
30  
35  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
580  
540  
500  
460  
420  
380  
340  
300  
260  
220  
400  
610  
570  
530  
490  
450  
410  
370  
330  
290  
250  
380  
360  
340  
320  
300  
280  
260  
240  
220  
TJ = 125ºC  
I C = 25A, 50A, 100A  
tf  
td(off) - - - -  
RG = 3ꢀ , VGE = 15V  
VCE = 480V  
tf  
td(off) - - - -  
RG = 3ꢀ , VGE = 15V  
CE = 480V  
TJ = 25ºC  
V
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXGH72N60A3  
IXGT72N60A3  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
120  
110  
100  
90  
120  
110  
100  
90  
tr  
td(on) - - - -  
t r  
td(on) - - - -  
TJ = 25ºC  
TJ = 125ºC , VGE = 15V  
CE = 480V  
RG = 3ꢀ , VGE = 15V  
CE = 480V  
V
V
I C = 100A  
TJ = 125ºC  
80  
80  
70  
70  
60  
60  
I C = 50A  
I C = 25A  
50  
50  
40  
40  
30  
30  
20  
20  
10  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
5
10  
15  
20  
25  
30  
35  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
I C = 100A  
tr  
td(on) - - - -  
RG = 3 , VGE = 15V  
Ω
VCE = 480V  
I C = 50A  
I C = 25A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS REF: G_72N60A3 (76)3-25-08-B  
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