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IXGX120N120A3

型号：

IXGX120N120A3

描述：

GenX3 A3级的IGBT[ GenX3 A3-Class IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

215 K

下载PDF手册
Preliminary Technical Information  
GenX3TM A3-Class  
IGBTs  
VCES = 1200V  
IC110 = 120A  
VCE(sat) ≤ 2.20V  
IXGK120N120A3  
IXGX120N120A3  
Ultra-Low Vsat PT IGBTs for  
up to 3kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
1200  
1200  
±20  
V
V
V
V
C
(TAB)  
E
VCGR  
VGES  
PLUS 247TM (IXGX)  
VGEM  
Transient  
±30  
IC25  
TC = 25°C ( Chip Capability )  
TC = 110°C  
240  
120  
75  
A
A
A
A
IC110  
ILRMS  
ICM  
Terminal Current Limit  
TC = 25°C, 1ms  
600  
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
Clamped Inductive Load  
ICM = 240  
A
G
C
E
(TAB)  
@ 0.8 • VCES  
PC  
TC = 25°C  
830  
W
G = Gate  
C = Collector  
E
= Emitter  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
Features  
z Optimized for Low Conduction Losses  
z Square RBSOA  
z High Avalanche Capability  
z International Standard Packages  
Md  
FC  
Mounting Torque ( IXGK )  
Mounting Force ( IXGX )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
z Low Gate Drive Requirement  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VCE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
Applications  
5.0  
V
z Power Inverters  
z UPS  
50 μA  
TJ = 125°C  
3 mA  
z Motor Drives  
IGES  
VCE = 0V, VGE = ±20V  
±400 nA  
z SMPS  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
1.85 2.20  
V
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
DS99977(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK120N120A3  
IXGX120N120A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXGK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1 MHz  
45  
73  
S
Cies  
Coes  
Cres  
Qg(on)  
Qge  
Qgc  
td(on)  
tri  
9900  
655  
240  
420  
70  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
mJ  
ns  
ns  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
180  
40  
67  
Inductive load, TJ = 25°C  
Eon  
td(off)  
tfi  
10  
IC = 100A, VGE = 15V  
490  
325  
33  
VCE = 960V, RG = 1Ω  
Note 2  
Eoff  
td(on)  
tri  
mJ  
ns  
30  
Inductive load, TJ = 125°C  
IC = 100A, VGE = 15V  
VCE = 960V, RG = 1Ω  
Note 2  
75  
ns  
Eon  
td(off)  
tfi  
15  
mJ  
ns  
685  
680  
58  
ns  
Eoff  
RthJC  
RthCK  
mJ  
0.15 °C/W  
°C/W  
0.15  
PLUS 247TM (IXGX) Outline  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
2. Switching Times may Increase for VCE (Clamp) > 0.8 VCES  
Higher TJ or Increased RG.  
,
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
PRELIMINARY TECHNICAL INFORMATION  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK120N120A3  
IXGX120N120A3  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
360  
320  
280  
240  
200  
160  
120  
80  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
7V  
5V  
7V  
60  
40  
40  
20  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
3.5  
15  
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
240  
220  
200  
180  
160  
140  
120  
100  
80  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 240A  
9V  
I C = 120A  
7V  
60  
40  
I C = 60A  
5V  
20  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25ºC  
I C = 240A  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
120A  
40  
20  
60A  
0
6
7
8
9
10  
11  
12  
13  
14  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK120N120A3  
IXGX120N120A3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
C = 120A  
I G = 10mA  
I
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
280  
240  
200  
160  
120  
80  
100,000  
10,000  
1,000  
100  
= 1MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
RG = 1Ω  
40  
dV / dt < 10V / ns  
C
res  
0
0
5
10  
15  
20  
25  
30  
35  
40  
200 300 400 500 600 700 800 900 1000 1100 1200  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_120N120A3(9P)2-19-09  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
20  
18  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
36  
32  
28  
24  
20  
16  
12  
8
E
E
on - - - -  
off  
RG = 1  
E
E
on - - - -  
off  
VGE = 15V  
Ω ,  
VCE = 960V  
TJ = 125ºC , VGE = 15V  
VCE = 960V  
TJ = 125ºC  
I C = 100A  
6
TJ = 25ºC  
4
I C = 50A  
2
4
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
900  
850  
800  
750  
700  
650  
600  
550  
500  
450  
400  
1500  
1400  
1300  
1200  
1100  
1000  
900  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
20  
18  
16  
14  
12  
10  
8
t f  
TJ = 125ºC, GE = 15V  
td(off)  
- - - -  
V
E
E
on - - - -  
off  
RG = 1Ω VGE = 15V  
,
VCE = 960V  
I C = 100A  
CE = 960V  
V
I C = 50A  
I C = 100A  
800  
6
700  
I C = 50A  
I C = 50A  
4
600  
500  
2
1
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
900  
800  
700  
600  
500  
400  
300  
200  
100  
1150  
1050  
950  
850  
750  
650  
550  
450  
350  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
1200  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
tf  
RG = 1Ω , VGE = 15V  
td(off)  
- - - -  
t f  
RG = 1Ω , VGE = 15V  
td(off) - - - -  
VCE = 960V  
VCE = 960V  
I
= 50A, 100A  
C
TJ = 125ºC  
TJ = 25ºC  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95 100  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGK120N120A3  
IXGX120N120A3  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
160  
140  
120  
100  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
tr  
RG = 1Ω , VGE = 15V  
td(on) - - - -  
tr  
TJ = 125ºC, VGE = 15V  
td(on) - - - -  
VCE = 960V  
VCE = 960V  
I C = 100A  
TJ = 125ºC, 25ºC  
60  
I C = 50A  
40  
20  
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
100  
90  
80  
70  
60  
50  
40  
30  
20  
54  
50  
46  
42  
38  
34  
30  
26  
22  
tr  
RG = 1Ω , VGE = 15V  
td(on) - - - -  
VCE = 960V  
I C = 100A  
I C = 50A  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_120N120A3(9P)2-19-09  
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