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IXGX50N60A2D1

型号:

IXGX50N60A2D1

描述:

IGBT与二极管[ IGBT with Diode ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

6 页

PDF大小:

124 K

Advance Technical Data  
VCES  
IC25  
VCE(sat)  
= 600 V  
= 75 A  
= 1.4 V  
IXGK50N60A2D1  
IXGX 50N60A2D1  
IGBT with Diode  
Low Saturation Voltage  
Symbol  
TestConditions  
Maximum Ratings  
TO-264  
(IXGK)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
(TAB)  
G
C
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C
PLUS247  
(IXGX)  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
A
TC = 110°C (50N60B2D1 Diode)  
TC = 25°C, 1 ms  
38  
(TAB)  
E
200  
G = Gate  
C = Collector  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 80  
A
E = Emitter  
Tab = Collector  
(RBSOA)  
Clamped inductive load @ VCE 600 V  
PC  
TC = 25°C  
400  
W
Features  
Low on-state voltage IGBT and  
anti-parallel diode in one package  
High current handling capability  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
MOS Gate turn-on for drive simplicity  
Md  
Mounting torque, TO-264  
1.13/10 Nm/lb.in.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Applications  
Lighting controls  
Heating controls  
AC/DC relays  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Advantages  
Space savings (two devices in one  
package)  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
600  
5
µA  
mA  
Easy to mount with 1 screw or spring  
clip  
IGES  
VCE = 0 V, VGE = 20 V  
100  
1.4  
nA  
VCE(sat)  
IC = 50 A, VGE = 15 V  
Note 1  
1.1  
V
V
TJ = 125°C  
© 2004 IXYS All rights reserved  
DS99275(12/04)  
IXGK 50N60A2D1  
IXGX 50N60A2D1  
TO-264 Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
IC = 40 A; VCE = 10 V,  
Note 1  
40  
55  
S
Cies  
Coes  
Cres  
3500  
220  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
140  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES  
44  
Dim.  
Millimeter  
Inches  
Max.  
.202  
Min.  
Max.  
Min.  
.190  
td(on)  
tri  
td(off)  
tfi  
20  
25  
ns  
ns  
ns  
ns  
mJ  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.100  
.079  
.114  
.083  
Inductive load, TJ = 25°C  
IC = 50 A, VGE = 15 V  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
360  
250  
2.0  
VCE = 480 V, RG = Roff = 5.0 Ω  
c
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
Eoff  
E
e
5.46BSC  
.215BSC  
td(on)  
tri  
20  
25  
ns  
ns  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
Inductive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
Eon  
td(off)  
tfi  
1.0  
290  
600  
4.1  
mJ  
ns  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
VCE = 480 V, RG = Roff = 5.0 Ω  
ns  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Eoff  
mJ  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
RthJC  
RthCK  
0.31 K/W  
K/W  
0.15  
PLUS247 Outline  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = 50 A, VGE = 0 V,  
Note 1  
1.2  
0.9  
V
V
TJ = 150°C  
RthJC  
0.65 K/W  
Note 1: Pulse test, t 300 µs, duty cycle 2 %  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGK 50N60A2D1  
IXGX 50N60A2D1  
© 2004 IXYS All rights reserved  
IXGK 50N60A2D1  
IXGX 50N60A2D1  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGK 50N60A2D1  
IXGX 50N60A2D1  
© 2004 IXYS All rights reserved  
IXGK 50N60A2D1  
IXGX 50N60A2D1  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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