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IXGX50N90B2D1

型号：

IXGX50N90B2D1

描述：

HiPerFAST IGBT与二极管快[ HiPerFAST IGBT with Fast Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

201 K

下载PDF手册
HiPerFASTTM  
IGBT with Fast  
Diode  
IXGH 50N90B2D1  
IXGK 50N90B2D1  
IXGX 50N90B2D1  
VCES  
IC25  
= 900 V  
= 75 A  
VCE(sat) = 2.7 V  
tfityp  
= 200 ns  
B2-Class High Speed IGBT  
with Fast Diode  
PreliminaryDataSheet  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
TAB)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
PLUS247 (IXGX)  
TC = 25°C, 1 ms  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600V  
ICM = 100  
A
TAB)  
(RBSOA)  
G
C
E
PC  
TC = 25°C  
400  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TO-264 (IXGK)  
TJM  
Tstg  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
G
D
S
C (TAB)  
Md  
Mounting torque (TO-247, TO-264)  
1.13/10Nm/lb.in.  
FC  
Mounting force (PLUS247)  
20..120 / 4.5..25  
N/lb  
G = Gate  
E=Emitter  
C = Collector  
TAB = Collector  
Weight  
TO-247  
TO-264  
PLUS247  
6
10  
6
g
g
g
Features  
ꢀ
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
ꢀ
ꢀ
Symbol  
TestConditions  
Characteristic Values  
min. typ. max.  
- drive simplicity  
(TJ = 25°C unless otherwise specified)  
Applications  
ꢀ
VGE(th)  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
ꢀ
ꢀ
ICES  
VCE = VCES  
VGE = 0 V  
50  
1
μA  
mA  
TJ = 150°C  
TJ = 125°C  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
ꢀ
IGES  
VCE = 0 V, VGE = ± 20 V  
± 100  
nA  
ꢀ
ꢀ
VCE(sat)  
IC = IC110, VGE = 15 V, Note 1  
2.2  
2.7  
V
V
Advantages  
ꢀ
High power density  
Very fast switching speeds for high  
ꢀ
frequency applications  
DS99393(01/06)  
© 2006 IXYS All rights reserved  
IXGH 50N90B2D1 IXGK 50N90B2D1  
IXGX 50N90B2D1  
Symbol  
TestConditions  
Characteristic Values  
min. typ. max.  
(TJ = 25°C unless otherwise specified)  
gfs  
IC  
= IC110 ; VCE = 10 V, Note 1  
25  
40  
S
Cies  
Coes  
Cres  
2500  
205  
75  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
135  
23  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES  
50  
td(on)  
tri  
td(off)  
tfi  
20  
28  
ns  
ns  
Inductiveload  
IC = IC110, VGE = 15 V  
350  
200  
4.7  
500 ns  
ns  
VCE = 720 V, RG = Roff = 5 Ω  
Eoff  
7.5 mJ  
td(on)  
tri  
20  
28  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC110, VGE = 15 V  
Eon  
td(off)  
tfi  
1.5  
400  
420  
8.7  
mJ  
ns  
VCE = 720 V, RG = Roff = 5 Ω  
ns  
Eoff  
mJ  
RthJC  
RthCH  
0.31 K/W  
K/W  
0.21  
Diode  
Symbol  
IF25  
Conditions  
Maximum Ratings  
30  
TC = 115°C  
A
Symbol  
Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min.  
typ. max.  
VF  
IF = 30 A; Note 1  
2.5 2.75  
1.8  
V
V
TVJ = 150°C  
IRM  
trr  
IF = 10 A; diF/dt = -100 A/μs; TVJ = 100°C  
VR = 100 V; VGE = 0 V  
5.5 11.5  
200  
A
ns  
RthJC  
RthCH  
0.9 K/W  
K/W  
with heat transfer paste  
0.25  
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETsandIGBTsarecoveredby  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGH 50N90B2D1 IXGK 50N90B2D1  
IXGX 50N90B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25 ºC  
300  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
GE  
=15V  
13V  
V
GE  
= 15V  
13 V  
11V  
9V  
11V  
7V  
9V  
7V  
5V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
3
6
VC E - Volts  
9
12  
15  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
V
GE  
= 15V  
13V  
V
GE  
= 15V  
I
= 100A  
C
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
11V  
9V  
7V  
I
= 50A  
C
I
= 25A  
C
5V  
0
0.5  
1
1.5  
2 2.5  
VCE - Volts  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
250  
T = -40ºC  
J
225  
200  
175  
150  
125  
100  
75  
= 25ºC  
T
J
25ºC  
125ºC  
I
= 100A  
50A  
C
25A  
50  
25  
0
3
4
5
6
7
8
9
10  
11  
12  
5
6
7
8
9 10 11 12 13 14 15  
VG E - Volts  
VG E - Volts  
© 2006 IXYS All rights reserved  
IXGH 50N90B2D1 IXGK 50N90B2D1  
IXGX 50N90B2D1  
Fig. 8. Dependence of Turn-off  
Fig. 7. Transconductance  
Energy Loss on RG  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
T = 125ºC  
J
I
= 100A  
C
35  
30  
25  
20  
15  
10  
5
V
= 15V  
GE  
CE  
V
= 720V  
T = -40ºC  
J
25ºC  
125ºC  
I
= 50A  
C
I
= 25A  
C
0
0
0
20  
5
25  
50  
75 100 125 150 175 200 225  
0
30  
60  
G
90  
120  
150  
R
- Ohms  
I C - Amperes  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
Fig. 9. Dependence of Turn-Off  
Energy Loss on IC  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
I
= 100A  
C
R
=5Ω  
G
T = 125ºC  
J
V
V
= 15V  
GE  
CE  
= 720V  
R
V
=5Ω  
G
= 15V  
GE  
CE  
I
= 50A  
C
V
= 720V  
T = 25ºC  
J
6
6
4
4
2
2
I
= 25A  
C
0
0
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
30  
40  
50  
60  
I C - Amperes  
70  
80  
90  
100  
J
Fig. 12. Dependence of Turn-off  
Switching Time on IC  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
1300  
1200  
1100  
1000  
900  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
td(off)  
tfi  
- - - - -  
I
= 25A  
50A  
C
tfi  
- - - - - -  
R
V
= 15V  
=5Ω, V  
G
GE  
T = 125ºC  
J
= 720V  
CE  
100A  
V
V
= 15V  
GE  
CE  
= 720V  
T = 125ºC  
J
800  
700  
I
= 100A  
50A  
C
600  
T = 25ºC  
J
500  
25A  
400  
300  
200  
10  
15  
20  
25  
R G - Ohms  
30  
35  
40  
45  
50  
20  
30  
40  
50  
60  
70  
80  
90  
100  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH 50N90B2D1 IXGK 50N90B2D1  
IXGX 50N90B2D1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
15  
600  
550  
500  
450  
400  
350  
300  
250  
200  
150  
td(off)  
13.5  
12  
10.5  
9
V
I
= 450V  
CE  
tfi  
R
V
V
- - - - - -  
I
= 25A  
50A  
C
= 50A  
C
Ω
=
5
G
I
= 10mA  
G
100A  
=
=
15 V  
GE  
CE  
720V  
7.5  
6
4.5  
3
I
= 100A  
50A  
C
1.5  
0
25A  
25 35 45 55 65 75 85 95 105 115 125  
0
20  
40  
60  
80  
Q G - nanoCoulombs  
100  
120  
140  
T - Degrees Centigrade  
J
Fig. 16. Reverse-Bias Safe  
Operating Area  
Fig. 15. Capacitance  
10000  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
1000  
100  
10  
C
oes  
T = 125ºC  
J
C
R
G
=10Ω  
dV/dT < 10V/ns  
res  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
100 200 300 400 500 600 700 800 900  
VC E - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
0.1  
1
10  
Pulse Width - milliseconds  
100  
1000  
© 2006 IXYS All rights reserved  
IXGH 50N90B2D1 IXGK 50N90B2D1  
IXGX 50N90B2D1  
70  
A
5
60  
TVJ= 100°C  
VR = 600V  
TVJ= 100°C  
A
μC  
VR = 600V  
50  
60  
IF 50  
40  
4
3
2
1
0
Qr  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
40  
IF= 30A  
IF=15A  
TVJ=150°C  
TVJ=100°C  
30  
30  
20  
10  
0
20  
TVJ= 25°C  
10  
0
A/μs  
-diF/dt  
0
1
2
3
VF  
V
4
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
Fig. 18. Forward current IF versus VF  
2.0  
Fig. 19. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 20. Peak reverse current IRM  
versus -diF/dt  
220  
120  
1.2  
μs  
TVJ= 100°C  
TVJ= 100°C  
VR = 600V  
ns  
IF = 30A  
V
200  
VFR  
tfr  
1.5  
Kf  
tfr  
VFR  
trr  
80  
40  
0
0.8  
180  
IF= 60A  
1.0  
IF= 30A  
IRM  
IF=15A  
160  
0.4  
0.5  
140  
120  
Qr  
0.0  
0.
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 21. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 22. Recovery time trr versus -diF/dt  
Fig. 23. Peak forward voltage VFR and  
tfr versus diF/dt  
2
1
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
K/W  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0397  
ZthJC  
0.1  
0.01  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 24 Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
PackageOutlines  
TO-247 AD Outline  
PLUS 247TM Outline  
TO-264 AA Outline  
∅ P  
e
Dim.  
Millimeter  
Inches  
Min. Max.  
Dim.  
Millimeter  
Inches  
Max.  
.202  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Min.  
Max.  
Min.  
Max.  
Min.  
.190  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
.100  
.079  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
c
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
E
e
20.80 21.34  
15.75 16.13  
20.80 21.46  
15.75 16.26  
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
K
e
L
L1  
5.20  
5.72 0.205 0.225  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
19.81 20.32  
4.50  
.780 .800  
.177  
3.81  
4.32  
P
3.17  
3.66  
.125  
.144  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
∅P 3.55  
Q
3.65  
.140 .144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Terminals: 1-Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from data gathered during objective characterizations of preliminary engineer-  
ing lots; but also may yet contain some information supplied during a subjective pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions, and  
dimensions without notice.  
© 2006 IXYS All rights reserved  
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