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IXGN50N60BD2

型号：

IXGN50N60BD2

描述：

HiPerFAST IGBT与HiPerFRED[ HiPerFAST IGBT with HiPerFRED ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

150 K

下载PDF手册
HiPerFASTTM IGBT  
with HiPerFRED  
IXGN 50N60BD2 VCES  
IXGN 50N60BD3 IC25  
= 600 V  
= 75 A  
VCE(sat) = 2.5 V  
tfi = 150 ns  
Buck & boost configurations  
...BD2  
...BD3  
Symbol TestConditions  
MaximumRatings  
SOT-227B, miniBLOC  
E153432  
1
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
2
TJ = 25°C to 150°C; RGE = 1 MW  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
4
IC25  
TC = 25°C  
75  
50  
A
A
A
A
3
IC90  
TC = 90°C  
IXGN50N60BD2  
1 = Emitter; 2 = Gate  
3 = Collector; 4 = Diode cathode  
ICM  
TC = 25°C, 1 ms  
200  
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 10 W  
ICM = 100  
(RBSOA) Clamped inductive load, L = 30 mH  
@ 0.8 VCES  
IXGN50N60BD3  
1 = Emitter/Diode Cathode; 2 = Gate  
3 = Collector; 4 = Diode anode  
PC  
TC = 25°C  
250  
600  
W
V
VRRM  
IFAVM  
IFRM  
PD  
TC = 70°C; rectangular, d = 50%  
tP z<10 ms; pulse width limited by TJ  
TC = 25°C  
60  
A
Features  
600  
A
• Internationalstandardpackage  
miniBLOC  
150  
W
°C  
°C  
°C  
TJ  
-40 ... +150  
150  
• Aluminiumnitrideisolation  
- highpowerdissipation  
• Isolation voltage 3000 V~  
• Very high current, fast switching  
IGBT & FRED diode  
TJM  
Tstg  
Md  
-40 ... +150  
Mountingtorque  
Terminalconnectiontorque(M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
• MOS Gate turn-on  
- drive simplicity  
• Low collector-to-case capacitance  
• Low package inductance (< 10 nH)  
- easy to drive and to protect  
• Molding epoxies meet UL94V-0  
flammabilityclassification  
Weight  
30  
g
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
IC = 250 mA, VCE = VGE  
600  
2.5  
V
V
5
• Buck converters  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 mA  
mA  
1
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.5  
• Easy to mount with 2 screws  
• Space savings  
• High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98502C(8/99)  
1 - 5  
IXGN 50N60BD2  
IXGN 50N60BD3  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
miniBLOC, SOT-227 B  
IC = IC90; VCE = 10 V,  
35  
50  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
4100  
290  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
110  
30  
nC  
nC  
nC  
M4 screws (4x) supplied  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
Max.  
35  
A
B
7.80  
8.20 0.307 0.323  
Inductive load, TJ = 25°C  
td(on)  
tri  
td(off)  
tfi  
50  
50  
ns  
ns  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
IC = IC90, VGE = 15 V, L = 100 mH,  
E
F
4.09  
4.29 0.161 0.169  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
14.91 15.11 0.587 0.595  
110  
150  
3.0  
250 ns  
220 ns  
4.0 mJ  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
J
11.68 12.22 0.460 0.481  
K
8.92  
9.60 0.351 0.378  
Eoff  
L
0.76  
0.84 0.030 0.033  
M
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
td(on)  
tri  
50  
60  
ns  
ns  
Inductive load, TJ = 125°C  
N
O
1.98  
2.13 0.078 0.084  
IC = IC90, VGE = 15 V, L = 100 mH  
P
Q
4.95  
5.97 0.195 0.235  
26.54 26.90 1.045 1.059  
Eon  
td(off)  
tfi  
3.0  
200  
250  
4.2  
mJ  
ns  
VCE = 0.8 VCES, RG = Roff = 2.7 W  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher TJ or  
increased RG  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.50 K/W  
K/W  
0.05  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol Test Conditions  
typ. max.  
IR  
TVJ = 25°C VR= VRRM  
650 uA  
2.5 mA  
TVJ = 150°C  
VF  
IF = 60 A, TVJ = 150°C  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
1.75  
2.40  
V
V
T
VJ = 25°C  
IRM  
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms  
VR = 540 V  
8.0  
A
trr  
IF = 1 A, -di/dt = 50 A/ms, VR = 30 V  
TJ = 25°C  
35  
ns  
RthJC  
0.85 K/W  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXGN 50N60BD2  
IXGN 50N60BD3  
100  
80  
60  
40  
20  
0
200  
160  
120  
80  
V
GE = 15V  
TJ = 25°C  
VGE = 15V  
TJ = 25°C  
11V  
13V  
11V  
9V  
9V  
13V  
7V  
7V  
40  
5V  
5V  
0
0
1
2
3
4
5
0
2
4
6
8
10  
VCE - Volts  
Fig. 1. Saturation Voltage Characteristics  
VCE - Volts  
Fig. 2. Extended Output Characteristics  
100  
80  
60  
40  
20  
0
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
TJ = 125°C  
VGE = 15V  
VGE = 15V  
9V  
I
C = 100A  
13V  
11V  
7V  
5V  
IC = 50A  
IC = 25A  
0
1
2
3
4
5
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees C  
Fig. 3. Saturation Voltage Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
10000  
100  
80  
60  
40  
20  
0
f = 1Mhz  
V
CE = 10V  
C
iss  
1000  
100  
10  
C
oss  
TJ = 25°C  
TJ = 125°C  
C
rss  
0
5
10 15 20 25 30 35 40  
0
2
4
6
8
10  
VGE - Volts  
VCE-Volts  
Fig. 6. Junction Capacitance Curves  
Fig. 5. Saturation Voltage Characteristics  
© 2000 IXYS All rights reserved  
3 - 5  
IXGN 50N60BD2  
IXGN 50N60BD3  
12  
10  
8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
12  
10  
TJ = 125°C  
RG = 4.7  
TJ = 125°C  
E(ON)  
E(ON)  
IC = 100A  
E(OFF)  
8
6
4
2
0
E(OFF)  
6
IC = 50A  
IC =25A  
E(ON)  
4
E(OFF)  
E(OFF)  
E(ON)  
2
0
100  
0
10  
20  
30  
40  
50  
60  
0
20  
40  
60  
80  
RG - Ohms  
IC - Amperes  
Fig. 7. Dependence of EON and EOFF on IC.  
Fig. 8. Dependence of tfi and EOFF on RG.  
600  
20  
15  
10  
5
IC =50A  
V
CE = 250V  
100  
10  
1
TJ = 125°C  
RG = 5.2  
dV/dt < 5V/ns  
0.1  
0
0
100  
200  
300  
400  
500  
0
50  
100  
Qg - nanocoulombs  
Fig. 9. Gate Charge  
150  
200  
250  
300  
VCE - Volts  
Fig. 10. Turn-off Safe Operating Area  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Fig. 11. Transient Thermal Resistance  
© 2000 IXYS All rights reserved  
4 - 5  
IXGN 50N60BD2  
IXGN 50N60BD3  
160  
A
140  
4000  
nC  
80  
TVJ=100°C  
VR = 300V  
TVJ=100°C  
VR = 300V  
A
120  
100  
80  
60  
40  
20  
0
3000  
2000  
1000  
0
60  
IF  
TVJ=25°C  
TVJ=100°C  
IF=120A  
IF= 60A  
IF= 30A  
IRM  
Qr  
IF=120A  
IF= 60A  
IF= 30A  
40  
20  
0
TVJ=150°C  
A/ s  
-diF/dt  
0
1
2
V
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
VF  
Fig. 12 Forward current IF versus VF  
2.0  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
140  
20  
V
4
TVJ=100°C  
VR = 300V  
ns  
µs  
130  
VFR  
VFR  
tfr  
trr  
1.5  
Kf  
15  
3
2
1
0
tfr  
120  
110  
100  
90  
IF=120A  
IF= 60A  
IF= 30A  
1.0  
10  
5
IRM  
0.5  
Qr  
TVJ=100°C  
IF = 60A  
0.0  
80  
0
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
A/ s  
0
200 400 600 1000  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
0.1  
1
2
3
0.324  
0.125  
0.201  
0.0052  
0.0003  
0.0385  
ZthJC  
0.01  
0.001  
DSEP 60-06A  
0.0001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2000 IXYS All rights reserved  
5 - 5  
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