IXGH40N30BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
20
28
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
2500
210
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
145
23
170 nC
35 nC
75 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
50
td(on)
tri
td(off)
tfi
25
45
75
75
0.3
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
Min. Max. Min. Max.
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 1.0 W
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
,
,
Eoff
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
td(on)
tri
25
45
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 1.0 W
Eon
td(off)
tfi
0.5
90
mJ
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
180 ns
230 ns
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
130
N
1.5 2.49 0.087 0.102
Eoff
0.6
1.4 mJ
RthJC
RthCK
0.62 K/W
K/W
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = IC90, VGE = 0 V,
1.8
1.8
V
A
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
IF = IC90, VGE = 0 V, -di /dt = 100 A/ms
VR = 100 V; TJ =100°FC
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C
1.5
30
trr
ns
1 K/W
RthJC
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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