IXGH 20N60 IXGM 20N60
IXGH 20N60A IXGM 20N60A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
IC = IC90; VCE = 10 V,
6
14
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
1500
200
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
100
20
120 nC
30 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
60
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
600
200
1.5
ns
ns
1 = Gate
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 82 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
2 = Collector
3 = Emitter
Tab = Collector
ns
,
20N60A
20N60A
ns
Eoff
mJ
Inductive load, TJ = 25°C
td(on)
tri
100
200
2
ns
ns
IC = IC90, VGE = 15 V,
L = 300 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES
,
900 1500 ns
RG = Roff = 82 Ω
20N60
20N60A
530 2000 ns
250
Remarks: Switching times
may increase for VCE
600 ns
(Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
20N60
20N60A
3.2
2.0
mJ
mJ
TO-204AE Outline
RthJC
RthCK
0.83 K/W
K/W
0.25
IXGH 20N60 and IXGH 20N60A characteristic curves are located on the
IXGH 20N60U1 and IXGH 20N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
