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IXGM25N100A

型号：

IXGM25N100A

描述：

低VCE （SAT） ，高速IGBT[ Low VCE(sat), High speed IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

110 K

下载PDF手册
VCES  
IC25 VCE(sat)  
Low VCE(sat)  
High speed IGBT  
IXGH/IXGM 25 N100 1000 V 50 A 3.5 V  
IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
50  
25  
A
A
A
TO-204 AE (IXGM)  
TC = 90°C  
TC = 25°C, 1 ms  
100  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 33 Ω  
Clamped inductive load, L = 100 µH  
ICM = 50  
@ 0.8 VCES  
A
PC  
TC = 25°C  
200  
W
C
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
Features  
l
International standard packages  
2nd generation HDMOSTM process  
Low VCE(sat)  
- for low on-state conduction losses  
High current handling capability  
MOS Gate turn-on  
Weight  
TO-204 = 18 g, TO-247 = 6 g  
l
l
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
l
l
- drive simplicity  
Voltage rating guaranteed at high  
l
temperature (125°C)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switch-mode and resonant-mode  
power supplies  
l
BVCES  
VGE(th)  
IC = 3 mA, VGE = 0 V  
1000  
2.5  
V
V
l
l
IC = 250 µA, VCE = VGE  
5
l
l
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250 µA  
mA  
1
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
Advantages  
Easy to mount with 1 screw (TO-247)  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
25N100  
25N100A  
3.5  
4.0  
V
V
(isolated mounting screw hole)  
High power density  
l
91516E (3/96)  
© 1996 IXYS All rights reserved  
IXGH 25N100  
IXGM 25N100  
IXGH 25N100A IXGM 25N100A  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-247 AD Outline  
min. typ. max.  
IC = IC90; VCE = 10 V,  
8
15  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
2750  
200  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
130  
25  
180 nC  
60 nC  
90 nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
55  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V, L = 300 µH,  
td(on)  
tri  
td(off)  
tfi  
100  
200  
500  
500  
5
ns  
ns  
1 = Gate  
2 = Collector  
3 = Emitter  
Tab = Collector  
VCE = 0.8 VCES, RG = Roff = 33 Ω  
Remarks: Switching times  
may increase  
for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
25N100A  
25N100A  
ns  
,
Eoff  
mJ  
td(on)  
tri  
100  
250  
3.5  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 300 µH  
Eon  
td(off)  
tfi  
mJ  
V
CE = 0.8 VCES, RG = Roff = 33 Ω  
720 1000 ns  
Remarks: Switching times  
may increase  
25N100  
25N100A  
950 3000 ns  
800 1500 ns  
for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
Eoff  
25N100  
25N100A  
10  
8
mJ  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
TO-204AE Outline  
0.25  
1 = Gate  
2 = Emitter  
Case = Collector  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH 25N100  
IXGM 25N100  
IXGH 25N100A IXGM 25N100A  
Fig. 1 Saturation Characteristics  
Fig. 2 Output Characterstics  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
200  
13V  
11V  
VG E= 15V  
VGE = 15V  
TJ = 25°C  
TJ = 25°C  
180  
160  
140  
120  
100  
80  
9V  
13V  
11V  
7V  
9V  
60  
40  
7V  
20  
0
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4 Temperature Dependence  
of Output Saturation Voltage  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
10  
9
8
7
6
5
4
3
2
1
0
I
C = 50A  
TJ = 25°C  
I
C = 50A  
IC = 25A  
I
C = 25A  
IC = 12.5A  
IC = 12.5A  
6
7
8
9
10 11 12 13 14 15  
VGE - Volts  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
Fig. 5 Input Admittance  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE(th)  
VCE = 10V  
IC = 250µA  
BVCES  
IC = 250µA  
TJ = 25°C  
TJ = 125°C  
TJ = - 40°C  
0
1
2
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© 1996 IXYS All rights reserved  
IXGH 25N100  
IXGM 25N100  
IXGH 25N100A IXGM 25N100A  
Fig.7 Gate Charge  
Fig.8 Turn-Off Safe Operating Area  
15  
13  
11  
9
100  
VCE = 800V  
IC = 25A  
IG = 10mA  
10  
TJ = 125°C  
dV/dt < 3V/ns  
1
7
5
0.1  
3
1
0.01  
0
25  
50  
75  
100  
125  
150  
0
200  
400  
600  
800  
1000  
Gate Charge - nCoulombs  
VCE - Volts  
Fig.9 Capacitance Curves  
f = 1MHz  
Cies  
2400  
2000  
1600  
1200  
800  
400  
0
Coes  
Cres  
0
5
10  
15  
20  
25  
VCE - Volts  
Fig.10 Transient Thermal Impedance  
1
D=0.5  
D=0.2  
D=0.1  
D=0.05  
0.1  
D = Duty Cycle  
D=0.02  
D=0.01  
Single Pulse  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

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 		IXGA10N60A 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

 		IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

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