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IXGP12N60C

型号：

IXGP12N60C

描述：

HiPerFAST IGBT[ HiPerFAST IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

98 K

下载PDF手册
V
I
V
= 600 V  
= 24 A  
= 2.7 V  
HiPerFASTTM IGBT  
IXGA 12N60C  
IXGP 12N60C  
CES  
C25  
t CE(sat)= 55 ns  
fi(typ)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 AA (IXGA)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
↑ C (tab)  
E
IC25  
IC90  
ICM  
TC = 25°C  
24  
12  
48  
A
A
A
TO-220 AB  
(IXGP)  
TC = 90°C  
TC = 25°C, 1 ms  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 33 Ω  
Clamped inductive load, L = 300 µH  
ICM = 24  
A
(RBSOA)  
@ 0.8 VCES  
G
C
E
PC  
TC = 25°C  
100  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E =Emitter  
C
= Collector  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Weight  
4
g
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
•Very high freqency IGBT  
•New generation HDMOSTM process  
•International standard package  
•JHEigDhEpCeTaOk -c2u2r0reAnBt ahnadndTlOin-g26ca3pAaAbility  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
• PFC circuits  
• AC motor speed control  
• DC servo & robot drives  
• Switch-mode and resonant-mode  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VGE = VGE  
600  
2.5  
V
V
5.0  
• pHoigwherposwueprplaieusdio amplifiers  
ICES  
VCE = 0.8, VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
µA  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• Fast switching speed  
• High power density  
VCE(sat)  
IC = ICE90, VGE = 15  
2.1  
2.7  
97534B (2/02)  
© 2002 IXYS All rights reserved  
IXGA12N60C IXGP12N60C  
TO-220 AB Dimensions  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
gfs  
IC = IC90; VCE = 10 V,  
7
11  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Cies  
Coes  
Cres  
860  
64  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
15  
Qg  
32  
10  
10  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
4 - Collector  
Bottom Side  
td(on)  
tri  
td(off)  
tfi  
20  
20  
60  
55  
ns  
ns  
ns  
ns  
Inductive load, TJ = 25°C  
IC = IC90, VGE = 15 V, L = 300 µH  
VCE = 0.8 VCES, RG = Roff = 18 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
,
Eoff  
0.09  
mJ  
td(on)  
tri  
20  
20  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 300 µH  
VCE = 0.8 VCES, RG = Roff = 18 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
Eon  
td(off)  
tfi  
0.15  
85 180  
85 180  
,
TO-263AAOutline  
Eoff  
0.27 0.60  
mJ  
RthJC  
RthCK  
1.25 K/W  
K/W  
0.25  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
BottomSide  
Min.RecommendedFootprint  
(Dimensions in inches and mm)  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
E1  
e
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXGA12N60C IXGP12N60C  
50  
40  
30  
20  
10  
0
100  
V
GE = 15V  
13V  
TJ = 25°C  
11V  
9V  
TJ = 25°C  
VGE = 15V  
80  
13V  
60  
11V  
40  
9V  
7V  
5V  
20  
7V  
5V  
0
0
2
4
6
8
10  
0
4
8
12  
16  
20  
VCE - Volts  
VCE - Volts  
Fig. 2. Extended Output Characteristics  
Fig. 1. Saturation Voltage Characteristics  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
50  
TJ = 125°C  
VGE = 15V  
13V  
VGE = 15V  
I
C = 24A  
11V  
9V  
40  
30  
20  
10  
0
IC = 12A  
IC = 6A  
7V  
5V  
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
VCE - Volts  
TJ - Degrees C  
Fig. 3. Saturation Voltage Characteristics  
Fig. 4. Temperature Dependence of VCE(sat)  
30  
VCE = 10V  
f = 1Mhz  
C
25  
20  
15  
iss  
1000  
C
oss  
100  
10  
1
C
rss  
10  
TJ = 125°C  
5
TJ = 25°C  
0
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE-Volts  
VGE - Volts  
Fig. 6. JunctionCapacitanceCurves  
Fig. 5. Saturation Voltage Characteristics  
© 2002 IXYS All rights reserved  
IXGA12N60C IXGP12N60C  
1.5  
1.0  
0.5  
0.0  
3
2
1
0
3
2
1
0
1.5  
1.0  
0.5  
0.0  
TJ = 125°C  
TJ = 125°C  
RG = 10Ω  
IC =24A  
E(ON)  
E(ON)  
E(ON)  
E(ON)  
E(OFF)  
IC = 12A  
IC = 6A  
E(OFF)  
E(OFF)  
E(OFF)  
0
5
10  
15  
20  
25  
0
10  
20  
30  
40  
50  
60  
IC - Amperes  
RG - Ohms  
Fig. 8. Dependence of EON and EOFF on RG.  
Fig. 7. Dependence of EON and EOFF on IC.  
16  
100  
24  
IC = 12A  
VCE = 300V  
12  
8
TJ = 125°C  
10  
RG = 4.7Ω  
dV/dt < 5V/ns  
1
4
0
0.1  
0
10  
20  
30  
40  
50  
0
100  
200  
300  
400  
500  
600  
Qg - nanocoulombs  
VCE - Volts  
Fig.10.Turn-offSafeOperatingArea  
Fig. 9. Gate Charge  
1
D=0.5  
D=0.2  
D=0.1  
0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
Fig. 11. TransientThermalResistance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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