IXGR 35N120B
IXGR 35N120C
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
IC = IC90, VCE = 10 V,
Note1
30
40
S
Cies
Coes
Cres
4620
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
260
90
Qg
170
28
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
57
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
td(on)
tri
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
50
27
ns
ns
td(off)
V
CE = 0.8 VCES, RG = Roff = 4.7 Ω
35N120B 180 280
35N120C 150 220
35N120B 160 320
35N120C 115 190
ns
Dim.
Millimeter
Inches
Min.
Max. Min. Max.
Remarks:Switchingtimesmay
increase for VCE (Clamp) > 0.8 VCES
higherTJ orincreasedRG
ns
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
,
tfi
ns
ns
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
Eoff
35N120B
35N120C
3.8
3.0
7.3
4.2
mJ
mJ
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
20.80 21.34
15.75 16.13
td(on)
tri
55
31
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
3.81
4.32
Eon
td(off)
2.6
mJ
ns
V
CE = 0.8 VCES, RG = Roff = 4.7 Ω
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
35N120B 300
35N120C 220
35N120B 360
35N120C 260
Remarks:Switchingtimesmay
increase for VCE (Clamp) > 0.8 VCES
higherTJ orincreasedRG
,
ns
tfi
ns
ns
Eoff
35N120B
35N120C
8.0
6.2
mJ
mJ
RthJC
RthCK
0.5 K/W
K/W
0.15
Note: 1. Pulse test, tp ≤ 300 ms, duty cycle:d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
