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IXGH40N120C3D1

型号：

IXGH40N120C3D1

描述：

GenX3 C3级IGBT W /二极管[ GenX3 C3-Class IGBT w/Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

204 K

下载PDF手册
Preliminary Technical Information  
GenX3TM C3-Class  
IGBT w/Diode  
VCES = 1200V  
IC110 = 40A  
VCE(sat) ≤ 4.4V  
tfi(typ) = 57ns  
IXGH40N120C3D1  
High Speed PT IGBT  
for 20 - 50 kHz Switching  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
TAB  
C
IC25  
IC110  
IF110  
TC = 25°C (Limited by Leads)  
TC = 110°C  
TC = 110°C  
75  
40  
25  
A
A
A
E
ICM  
TC = 25°C, 1ms  
180  
A
G = Gate  
C
= Collector  
E = Emitter  
TAB = Collector  
IA  
EAS  
TC = 25°C  
TC = 25°C  
30  
500  
A
mJ  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 3Ω  
Clamped inductive load  
ICM = 80  
A
V
@VCE <1200  
Features  
PC  
TC = 25°C  
380  
W
z Optimized for Low Conduction Losses  
z Square RBSOA  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z Avalanche Rated  
-55 ... +150  
z Anti-Parallel Ultra Fast Diode  
z International Standard Package  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Weight  
6
g
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
Applications  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
• Switch-Mode and Resonant-Mode  
Power Supplies  
VCE = VCES, VGE= 0V  
100 μA  
mA  
±100 nA  
TJ = 125°C  
TJ = 125°C  
3
• Uninterruptible Power Supplies (UPS)  
IGES  
VCE = 0V, VGE = ±20V  
• DC Choppers  
VCE(sat)  
IC  
= 30A, VGE = 15V, Note 1  
4.4  
V
V
• AC Motor Drives  
2.7  
• DC Servo and Robot Drives  
DS100115(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH40N120C3D1  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
18  
30  
S
Cies  
Coes  
Cres  
2930  
pF  
pF  
pF  
240  
93  
∅ P  
1
2
3
Qg  
142  
19  
nC  
nC  
nC  
Qge  
Qgc  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
62  
td(on)  
tri  
Eon  
td(off)  
tfi  
17  
33  
ns  
ns  
e
Inductive load, TJ = 25°C  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
3 - Source  
1.80  
130  
57  
mJ  
IC = 30A, VGE = 15V  
Dim.  
Millimeter  
Inches  
Min. Max.  
ns  
VCE = 600V, RG = 3Ω  
Note 2  
Min. Max.  
100 ns  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eoff  
0.55  
1.00 mJ  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
17  
35  
ns  
ns  
Inductive load, TJ = 25°C  
Eon  
td(off)  
tfi  
3.50  
177  
298  
1.60  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
IC = 30A, VGE = 15V  
20.80 21.46  
15.75 16.26  
VCE = 600V, RG = 3Ω  
Note 2  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Eoff  
mJ  
RthJC  
RthCK  
0.33 °C/W  
°C/W  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
(TJ = 25°C, Unless Otherwise Specified)  
Characteristic Value  
Symbol  
Test Conditions  
Min. Typ.  
Max.  
VF  
2.8  
V
V
IF = 30A,VGE = 0V, Note 1  
TJ = 150°C  
1.6  
IRM  
trr  
4
A
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C  
VR = 300V TJ = 100°C  
100  
ns  
RthJC  
0.9 °C/W  
Note 1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
2. Switching Times may Increase for VCE (Clamp) > 0.5 VCES  
Higher TJ or Increased RG.  
,
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH40N120C3D1  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
250  
225  
200  
175  
150  
125  
100  
75  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
9V  
7V  
11V  
9V  
7V  
5V  
50  
25  
5V  
0
0
1
2
3
4
5
6
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
VGE = 15V  
13V  
11V  
VGE = 15V  
I C = 80A  
9V  
7V  
I C = 40A  
I C = 20A  
100  
5V  
25  
50  
75  
125  
150  
0
1
2
3
4
5
6
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
TJ = 25ºC  
I C = 80A  
TJ = 125ºC  
25ºC  
- 40ºC  
40A  
20A  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH40N120C3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 40A  
G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
C
res  
RG = 3Ω  
dV / dt < 10V / ns  
10  
200  
400  
600  
800  
1000  
1200  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_40N120C3(6N)2-18-09-A  
IXGH40N120C3D1  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Switching  
Energy Loss vs. Collector Current  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
9
8
7
6
5
4
3
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
off  
E
E
on - - - -  
off  
RG = 3  
Ω ,  
VGE = 15V  
VCE = 600V  
I C = 60A  
TJ = 125ºC  
I C = 30A  
TJ = 25ºC  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
2
6
10  
14  
18  
22  
26  
30  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 14. Inductive Switching  
Energy Loss vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
50  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
8
t f  
td(off)  
- - - -  
TJ = 125ºC, VGE = 15V  
E
E
on - - - -  
off  
7
6
5
4
3
2
1
RG = 3Ω VGE = 15V  
,
VCE = 600V  
VCE = 600V  
I C = 30A  
I C = 60A  
I C = 60A  
I C = 30A  
0
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
RG - Ohms  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
350  
300  
250  
200  
150  
100  
50  
190  
180  
170  
160  
150  
140  
130  
120  
tf  
RG = 3Ω , VGE = 15V  
td(off)  
- - - -  
t f  
RG = 3Ω , VGE = 15V  
td(off) - - - -  
I C = 30A  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
TJ = 25ºC  
I
= 60A  
C
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXGH40N120C3D1  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
180  
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
tr  
td(on)  
tr  
td(on)  
- - - -  
- - - -  
TJ = 125ºC, VGE = 15V  
RG = 3Ω , VGE = 15V  
VCE = 600V  
VCE = 600V  
I C = 60A  
TJ = 125ºC, 25ºC  
I C = 30A  
60  
40  
20  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
RG - Ohms  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
IC - Amperes  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
22  
21  
20  
19  
18  
17  
16  
15  
I C = 60A  
t r  
td(on)  
- - - -  
RG = 3Ω , VGE = 15V  
VCE = 600V  
I C = 30A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_40N120C3(6N)2-18-09-A  
IXGH40N120C3D1  
60  
A
1000  
nC  
30  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
50  
40  
30  
20  
10  
0
25  
IF= 60A  
IF= 30A  
IF= 15A  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/μs  
1000  
0
1
2
3 V  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
-diF/dt  
Fig. 21. Forward Current IF Versus VF  
2.0  
Fig. 22. Reverse Recovery Charge Qr  
Versus -diF/dt  
Fig. 23. Peak Reverse Current IRM  
Versus -diF/dt  
90  
20  
1.00  
TVJ= 100°C  
TVJ= 100°C  
IF = 30A  
VR = 300V  
V
μs  
ns  
VFR  
15  
tfr  
VFR  
trr  
1.5  
Kf  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
800 1000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 24. Dynamic Parameters Qr, IRM  
Versus TVJ  
Fig. 25. Recovery Time trr Versus -diF/dt  
Fig. 26. Peak Forward Voltage VFR and  
tfr Versus diF/dt  
1
K/W  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 27. Transient Thermal Resistance Junction to Case  
© 2009 IXYS CORPORATION, All Rights Reserved  
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