PXT3904
TRANSISTOR(NPN)
SOT-89
1. BASE
FEATURES
1
2. COLLECTOR
3. EMITTER
z
z
z
Compliment to PXT3906
Low current
2
3
Low voltage
MARKING: 1A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
40
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
0.2
A
PC
0.5
W
℃
℃
TJ
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
60
40
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=10μA,IC=0
V
V
ICBO
IEBO
VCB=30V,IE=0
0.05
0.05
μA
μA
cut-off current
VEB=6V,IC=0
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
60
80
DC current gain
100
60
300
VCE=1V,IC=100mA
30
VCE(sat)1 IC=10mA,IB=1mA
VCE(sat)2 IC=50mA,IB=5mA
VBE(sat)1 IC=10mA,IB=1mA
VBE(sat)2 IC=50mA,IB=5mA
0.2
0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.65
300
0.85
0.95
V
V
Transition frequency
Collector capacitance
Emitter capacitance
fT
VCE=20V,IC=10mA,f=100MHz
MHz
pF
pF
Cc
Ce
VCB=5V,IE=0,f=1MHz
VEB=0.5V,IC=0,f=1MHz
4
8
VCE=5V,Ic=0.1mA,f=10Hz-15.7kHz,
RS=1KΩ
Noise figure
NF
5
dB
Delay time
Rise time
Storage time
Fall time
td
tr
35
35
nS
nS
nS
nS
IC=10mA , IB1=-IB2= 1mA
tS
tf
200
50
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
