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IXGV25N250S

型号：

IXGV25N250S

描述：

高电压IGBT电容器放电应用[ High Voltage IGBT For Capacitor Discharge Applications ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

180 K

下载PDF手册
Preliminary Technical Information  
IXGH25N250  
IXGT25N250  
IXGV25N250S  
VCES = 2500 V  
IC25 = 60 A  
VCE(sat)≤ 2.9 V  
High Voltage IGBT  
For Capacitor Discharge  
Applications  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
VCES  
VCGR  
TJ = 25°C to 150°C  
2500  
2500  
V
AB)  
E
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXGT)  
IC25  
IC110  
ICM  
TC = 25°C  
60  
25  
A
A
A
G
E
TC = 110°C  
C (TAB)  
TC = 25°C, VGE = 20 V, 1 ms  
200  
SSOA  
(RBSOA)  
V
GE= 20 V, TJ = 125°C, RG = 20 Ω  
ICM = 240  
A
PLUS220SMD (IXGV...S)  
Clamped inductive load @ 1250V  
PC  
TC = 25°C  
250  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G
E
TJM  
Tstg  
C (TAB)  
-55 ... +150  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting torque (TO-247)  
1.13/10 Nm/lb-in  
Features  
ꢀ
Weight  
TO-247  
TO-268  
6
4
g
g
High peak current capability  
Low saturation voltage  
MOS Gate turn-on  
ꢀ
ꢀ
-drive simplicity  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Rugged NPT structure  
Molding epoxies meet UL94V-0  
flammability classification  
Min. Typ. Max.  
BVCES  
VGE(th)  
IC = 250 μA, VGE = 0 V  
IC = 250 μA, VCE = VGE  
2500  
3.0  
V
Applications  
5.0  
V
ꢀ
Capacitor discharge  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
50  
1
μA  
mA  
ꢀ
Pulser circuits  
TJ = 125°C  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
Advantages  
VCE(sat)  
IC = 25 A, VGE = 15 V  
IC = 75 A  
2.9  
5.2  
V
V
ꢀ
High power density  
Suitable for surface mounting  
Easy to mount with 1 screw,  
ꢀ
ꢀ
(isolated mounting screw hole)  
© 2007 IXYS CORPORATION, All rights reserved  
DS99760 (04/07)  
IXGH25N250 IXGT25N250 IXGV25N250S  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXGH) Outline  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
gfs  
IC = 50 A; VCE = 10 V, Note 1  
VGE = 15V, VCE = 20V, Note 1  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
16  
26  
S
A
∅ P  
IC(ON)  
240  
1
2
3
Cies  
Coes  
Cres  
2310  
75  
pF  
pF  
pF  
23  
Qg  
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES  
75  
15  
30  
nC  
nC  
nC  
e
Qge  
Qgc  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter) Tab - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Resistive load  
td(on)  
tri  
td(off)  
tfi  
68  
233  
209  
200  
ns  
ns  
ns  
ns  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
IC = 50 A, VGE = 15 V, Note 1  
VCE = 1250 V, RG = 5 Ω  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCS  
0.5 °C/W  
°C/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
(TO-247)  
0.25  
e
5.20  
5.72 0.205 0.225  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %  
2. Additional provisions for lead-to-lead voltage  
isolation are required at VCE > 1200 V  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
PLUS220SMD (IXGV_S) Outline  
TO-268 (IXGT) Outline (D3-Pak)  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from data gathered during objective characterizations of preliminary engineering lots; but  
also may yet contain some information supplied during a pre-production design evaluation. IXYS  
reserves the right to change limits, test conditions, and dimensions without notice.  
Ref: IXYS CO 0052 RA  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGH25N250 IXGT25N250 IXGV25N250S  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
250  
150  
135  
120  
105  
90  
V
= 25V  
20V  
GE  
V
= 25V  
20V  
GE  
225  
200  
175  
150  
125  
100  
75  
15V  
10V  
15V  
10V  
75  
60  
45  
30  
50  
15  
25  
0
0
0
1
2
3
4
5
6
7
8
0
-50  
4
2
4
6
8
10  
12  
14  
16  
18  
125  
12  
20  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
2.4  
2.2  
2
200  
180  
160  
140  
120  
100  
80  
V
= 25V  
20V  
GE  
V
= 15V  
GE  
I
= 150A  
C
1.8  
1.6  
1.4  
1.2  
1
15V  
10V  
I
= 100A  
C
I
= 50A  
C
60  
40  
0.8  
0.6  
0.4  
20  
0
0
2
4
6
8
10  
12  
14  
16  
-25  
0
25  
50  
75  
100  
150  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
10  
9
V
= 15V  
GE  
T
J
= - 40ºC  
25ºC  
125ºC  
8
I
= 150A  
C
7
6
I
= 100A  
C
60  
5
40  
4
I
= 50A  
15  
C
20  
3
0
7
8
9
10  
11  
12  
13  
14  
16  
17  
5
6
7
8
9
10  
11  
13  
VGE - Volts  
VGE - Volts  
© 2007 IXYS CORPORATION, All rights reserved  
IXGH25N250 IXGT25N250 IXGV25N250S  
Fig. 8. Resistive Turn-on Rise Time  
Fig. 7. Transconductance  
vs. Junction Temperature  
36  
33  
30  
27  
24  
21  
18  
15  
12  
9
680  
640  
600  
560  
520  
480  
440  
400  
360  
320  
280  
240  
200  
R
V
V
= 5  
Ω
G
I
= 150A  
C
= 15V  
GE  
CE  
= 1250V  
T
J
= - 40ºC  
25ºC  
125ºC  
I
= 50A  
C
6
3
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 9. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 10. Resistive Turn-on Switching Times  
vs. Gate Resistance  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
200  
700  
680  
660  
640  
620  
600  
580  
560  
540  
520  
500  
480  
124  
120  
116  
112  
108  
104  
100  
96  
R
= 5  
Ω
G
T = 125ºC  
J
V
V
= 15V  
= 1250V  
GE  
CE  
I
= 150A  
C
t r  
td(on)  
- - - -  
T = 125ºC, V = 15V  
J
GE  
T = 25ºC  
J
V
= 1250V  
CE  
92  
88  
I
= 50A  
18  
C
84  
80  
50  
60  
70  
80  
90  
100 110 120 130 140 150  
4
6
8
10  
12  
14  
16  
20  
IC - Amperes  
RG - Ohms  
Fig. 12. Resistive Turn-off Switching Times  
vs. Collector Current  
Fig. 11. Resistive Turn-off Switching Times  
vs. Junction Temperature  
245  
240  
235  
230  
225  
220  
215  
210  
205  
200  
195  
190  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
245  
240  
235  
230  
225  
220  
215  
210  
205  
200  
195  
190  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
t f  
R
td(off)  
- - - -  
= 5 , V = 15V  
Ω
G
GE  
V
= 1250V  
t f  
R
td(off)  
- - - -  
CE  
= 5 , V = 15V  
Ω
G
GE  
V
= 1250V  
I = 50A, 150A  
C
CE  
T = 25ºC  
J
T = 125ºC  
J
I
= 150A, 50A  
C
50  
60  
70  
80  
90 100 110 120 130 140 150  
25 35 45 55 65  
75 85 95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH25N250 IXGT25N250 IXGV25N250S  
Fig. 13. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 14. Gate Charge  
260  
255  
250  
245  
240  
235  
230  
225  
220  
215  
210  
205  
200  
280  
265  
250  
235  
220  
205  
190  
175  
160  
145  
130  
115  
100  
16  
14  
12  
10  
8
t f  
td(off) - - - -  
V
= 1250V  
CE  
T = 125ºC, V = 15V  
J
GE  
I
I
= 50A  
C
G
V
= 1250V  
CE  
= 10 mA  
I
= 150A, 50A  
C
6
4
2
0
0
10  
20  
30  
40  
50  
60  
70  
80  
4
6
8
10  
12  
14  
16  
18  
20  
QG - NanoCoulombs  
RG - Ohms  
Fig. 15. Reverse-Bias Safe Operating Area  
Fig. 16. Capacitance  
280  
240  
200  
160  
120  
80  
10000  
1000  
100  
f = 1 MHz  
C
C
C
ies  
oes  
res  
T
= 125ºC  
J
R
= 20  
Ω
G
40  
dV / dT < 10V / ns  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
250  
500  
750 1000 1250 1500 1750 2000 2250 2500  
VCE - Volts  
VCE - Volts  
Fig. 17. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2007 IXYS CORPORATION, All rights reserved  
IXYS REF: G_25N250 (5P-P528) 04-27-07-D.xls  
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