IXGR 40N60C2
IXGR 40N60C2D1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
ISOPLUS 247 Outline
IC = 30 A; VCE = 10 V,
20
36
S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
Cies
2500
pF
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz 40N60C2
180
220
pF
pF
40N60C2D1
Cres
54
pF
Qg
95
14
36
nC
nC
nC
Qge
Qgc
IC = 30 A, VGE = 15 V, VCE = 0.5 VCES
td(on)
tri
td(off)
tfi
18
20
ns
ns
Inductive load, TJ = 25°C
IC = 30 A, VGE = 15 V
VCE = 400 V, RG = Roff = 3 Ω
90
140 ns
ns
32
Eoff
0.20
0.37 mJ
td(on)
tri
18
20
ns
ns
Inductive load, TJ = 125°C
IC = 30 A, VGE = 15 V
Eon
40N60C2
0.3
mJ
mJ
40N60C2D1 0.6
VCE = 400 V, RG = Roff = 3 Ω
td(off)
tfi
130
80
ns
240 ns
Eoff
0.50
0.26
mJ
RthJ-DCB
RthJC
(Note 1)
(Note 2)
K/W
0.74 K/W
RthCS
0.15
K/W
ReverseDiode(FRED)(D1VersionOnly)
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol
VF
TestConditions
min. typ.
max.
IF = 30 A, VGE = 0 V, Pulse test
t ≤ 300 μs, duty cycle d ≤ 2 %
TJ =150°C
1.6
2.5
V
V
TJ = 25°C
IRM
trr
trr
IF = 30 A, VGE = 0 V, -diF/dt =100 A/μs, TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 100 A/μs; VR = 30 V
4
A
ns
ns
100
25
RthJC
RthCS
1.5 K/W
K/W
0.15
Notes:
1. RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate
2. RthJC is the thermal resistance junction-to-external side of DCB substrate
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
